Patents by Inventor Tapash Chakraborty
Tapash Chakraborty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11931855Abstract: Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.Type: GrantFiled: May 28, 2020Date of Patent: March 19, 2024Assignee: Applied Materials, Inc.Inventors: Han-Wen Chen, Steven Verhaverbeke, Tapash Chakraborty, Prayudi Lianto, Prerna Sonthalia Goradia, Giback Park, Chintan Buch, Pin Gian Gan, Alex Hung
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Patent number: 11926903Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.Type: GrantFiled: June 9, 2022Date of Patent: March 12, 2024Assignee: Applied Materials, Inc.Inventors: Nitin Deepak, Tapash Chakraborty, Prerna Sonthalia Goradia, Visweswaren Sivaramakrishnan, Nilesh Chimanrao Bagul, Bahubali S. Upadhye
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Patent number: 11705365Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.Type: GrantFiled: May 18, 2021Date of Patent: July 18, 2023Assignee: Applied Materials, Inc.Inventors: Wei-Sheng Lei, Kurtis Leschkies, Roman Gouk, Giback Park, Kyuil Cho, Tapash Chakraborty, Han-Wen Chen, Steven Verhaverbeke
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Publication number: 20220396732Abstract: Methods for etching alkali metal compounds are disclosed. Some embodiments of the disclosure expose an alkali metal compound to an alcohol to form a volatile metal alkoxide. Some embodiments of the disclosure expose an alkali metal compound to a ?-diketone to form a volatile alkali metal ?-diketonate compound. Some embodiments of the disclosure are performed in-situ after a deposition process. Some embodiments of the disclosure provide methods which selectively etch alkali metal compounds.Type: ApplicationFiled: June 9, 2022Publication date: December 15, 2022Applicant: Applied Materials, Inc.Inventors: Nitin Deepak, Tapash Chakraborty, Prerna Sonthalia Goradia, Visweswaren Sivaramakrishnan, Nilesh Chimanrao Bagul, Bahubali S. Upadhye
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Publication number: 20220375787Abstract: The present disclosure relates to micro-via structures for interconnects in advanced wafer level semiconductor packaging. The methods described herein enable the formation of high-quality, low-aspect-ratio micro-via structures with improved uniformity, thus facilitating thin and small-form-factor semiconductor devices having high I/O density with improved bandwidth and power.Type: ApplicationFiled: May 18, 2021Publication date: November 24, 2022Inventors: Wei-Sheng LEI, Kurtis LESCHKIES, Roman GOUK, Giback PARK, Kyuil CHO, Tapash CHAKRABORTY, Han-Wen CHEN, Steven VERHAVERBEKE
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Patent number: 11388822Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.Type: GrantFiled: August 28, 2020Date of Patent: July 12, 2022Assignee: Applied Materials, Inc.Inventors: Tapash Chakraborty, Steven Verhaverbeke, Han-Wen Chen, Chintan Buch, Prerna Goradia, Giback Park, Kyuil Cho
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Publication number: 20220162747Abstract: Exemplary methods of removing lithium-containing deposits may include heating a surface of a lithium-containing deposit. The surface may include oxygen or nitrogen, and the lithium-containing deposit may be disposed on a surface of a processing chamber. The methods may include contacting the surface of the lithium-containing deposit with a hydrogen-containing precursor. The contacting may hydrogenate the surface of the lithium-containing deposit. The methods may include contacting the lithium-containing deposit with a nitrogen-containing precursor to form volatile byproducts. The methods may include exhausting the volatile byproducts of the lithium-containing deposit from the processing chamber.Type: ApplicationFiled: November 18, 2021Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Tapash Chakraborty, Nitin Deepak, Prerna Sonthalia Goradia, Bahubali S. Upadhye, Nilesh Chimanrao Bagul, Subramanya P. Herle, Visweswaren Sivaramakrishnan
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Publication number: 20220130663Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.Type: ApplicationFiled: December 27, 2021Publication date: April 28, 2022Applicant: Applied Materials, Inc.Inventors: Tapash Chakraborty, Robert Jan Visser, Prerna Sonthalia Goradia
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Publication number: 20220071023Abstract: Methods for forming circuit boards and circuit boards using an adhesion layer are described. A substrate with two surfaces is exposed to a bifunctional organic compound to form an adhesion layer on the first substrate surface. A resin layer is then deposited on the adhesion layer and the exposed substrate surfaces. Portions of the resin layer may be removed to expose metal pads for contacts.Type: ApplicationFiled: August 28, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Tapash Chakraborty, Steven Verhaverbeke, Han-Wen Chen, Chintan Buch, Prerna Goradia, Giback Park, Kyuil Cho
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Publication number: 20200400990Abstract: Embodiments described herein relate to flat optical devices and methods of forming flat optical devices. One embodiment includes a substrate having a first arrangement of a first plurality of pillars formed thereon. The first arrangement of the first plurality of pillars includes pillars having a height h and a lateral distance d, and a gap g corresponding to a distance between adjacent pillars of the first plurality of pillars. An aspect ratio of the gap g to the height h is between about 1:1 and about 1:20. A first encapsulation layer is disposed over the first arrangement of the first plurality of pillars. The first encapsulation layer has a refractive index of about 1.0 to about 1.5. The first encapsulation layer, the substrate, and each of the pillars of the first arrangement define a first space therebetween. The first space has a refractive index of about 1.0 to about 1.5.Type: ApplicationFiled: June 18, 2020Publication date: December 24, 2020Applicant: Applied Materials, Inc.Inventors: Ludovic GODET, Tapashree ROY, Prerna Sonthalia GORADIA, Srobona SEN, Robert Jan VISSER, Nitin DEEPAK, Tapash CHAKRABORTY
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Publication number: 20200391343Abstract: Embodiments of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates. More specifically, embodiments of the present disclosure relate to planarization of surfaces on substrates for advanced packaging applications, such as surfaces of polymeric material layers. In one implementation, the method includes mechanically grinding a substrate surface against a polishing surface in the presence of a grinding slurry during a first polishing process to remove a portion of a material formed on the substrate; and then chemically mechanically polishing the substrate surface against the polishing surface in the presence of a polishing slurry during a second polishing process to reduce any roughness or unevenness caused by the first polishing process.Type: ApplicationFiled: May 28, 2020Publication date: December 17, 2020Inventors: Han-Wen CHEN, Steven VERHAVERBEKE, Tapash CHAKRABORTY, Prayudi LIANTO, Prerna Sonthalia GORADIA, Giback PARK, Chintan BUCH, Pin Gian GAN, Alex HUNG
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Patent number: 10407789Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.Type: GrantFiled: December 7, 2017Date of Patent: September 10, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Balaji Ganapathy, Ankur Kadam, Prerna S. Goradia, Laksheswar Kalita, Tapash Chakraborty, Vijay Bhan Sharma
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Patent number: 10326067Abstract: Single source precursors, methods to synthesize single source precursors and methods to deposit nanowire based thin films using single source precursors for high efficiency thermoelectric devices are provided herein. In some embodiments, a method of forming a single source precursor includes mixing a first compound with one of SbX3, SbX5, Sb2(SO4)3 or with one of BiX3, Bi(NO3)3, Bi(OTf)3, Bi(PO4), Bi(OAc)3, wherein the first compound is one of a lithium selenolate, a lithium tellurolate, a monoselenide, or a monotelluride.Type: GrantFiled: September 11, 2015Date of Patent: June 18, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Ranga Rao Arnepalli, Tapash Chakraborty, Robert Jan Visser
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Publication number: 20180350604Abstract: Embodiments of the disclosure relate to methods of selectively depositing or etching conductive materials from a substrate comprising conductive materials and nonconductive materials. More particularly, embodiments of the disclosure are directed to methods of using electrical bias and aerosol assisted chemical vapor deposition to deposit metal on conductive metal pillars. Additional embodiments of the disclosure relate to methods of using electrical bias and aerosol assisted chemical vapor deposition to etch metal from conductive metal pillars.Type: ApplicationFiled: May 30, 2018Publication date: December 6, 2018Inventors: Robert Jan Visser, Prerna Goradia, Tapash Chakraborty, Ranga Rao Arnepalli, Darshan Thakare, Geetika Bajaj
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Publication number: 20180342388Abstract: Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.Type: ApplicationFiled: May 22, 2018Publication date: November 29, 2018Inventors: Tapash Chakraborty, Robert Jan Visser, Prerna Goradia
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Publication number: 20180261500Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.Type: ApplicationFiled: March 7, 2017Publication date: September 13, 2018Inventors: Geetika Bajaj, Tapash Chakraborty, Prerna Sonthalia Goradia, Robert Jan Visser, Bhaskar Kumar, Deenesh Padhi
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Patent number: 10074559Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.Type: GrantFiled: March 7, 2017Date of Patent: September 11, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Geetika Bajaj, Tapash Chakraborty, Prerna Sonthalia Goradia, Robert Jan Visser, Bhaskar Kumar, Deenesh Padhi
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Publication number: 20180163317Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.Type: ApplicationFiled: December 7, 2017Publication date: June 14, 2018Inventors: Balaji GANAPATHY, Ankur KADAM, Prerna S. GORADIA, Laksheswar KALITA, Tapash CHAKRABORTY, Vijay Bhan SHARMA
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Publication number: 20180053659Abstract: Methods for selective dielectric deposition using self-assembled monolayer (SAM) are provided herein. A method of selectively depositing a low-k dielectric layer atop a substrate having an exposed silicon surface and an exposed silicon-containing surface, includes: (a) growing an organosilane based self-assembled monolayer atop the exposed silicon-containing surface, wherein the organosilane based self-assembled monolayer is thermally stable at a first temperature of greater than about 300 degrees Celsius; and (b) selectively depositing a low-k dielectric layer atop the exposed silicon surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the low-k dielectric layer atop the silicon-containing surface.Type: ApplicationFiled: February 25, 2016Publication date: February 22, 2018Inventors: Tapash CHAKRABORTY, Prerna GORADIA, Robert Jan VISSER
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Patent number: 9780250Abstract: An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A patterned implant is performed on one surface of the workpiece. A self-aligned masking process is then performed, which is achieved by exploiting the changes in surface properties caused by the patterned implant. The masking process includes applying a coating that preferentially adheres to the previously implanted regions. A blanket implant is then performed, which serves to implant the portions of the workpiece that are not covered by the coating. Thus, the blanket implant is actually a complementary implant, doping the regions that were not implanted by the first patterned implant. The coating is then optionally removed from the workpiece.Type: GrantFiled: January 14, 2016Date of Patent: October 3, 2017Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Vikram M. Bhosle, Timothy J. Miller, Tapash Chakraborty, Prerna Goradia, Robert J. Visser