Patents by Inventor Taras Pokhil
Taras Pokhil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9761279Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: GrantFiled: March 24, 2017Date of Patent: September 12, 2017Assignee: Seagate Technology LLCInventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Yi
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Patent number: 9720053Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.Type: GrantFiled: August 31, 2015Date of Patent: August 1, 2017Assignee: SEAGATE TECHNOLOGY LLCInventors: Konstantin Nikolaev, Victor Sapozhnikov, Taras Pokhil, Jae-Young Yi, Mohammed Patwari, Eric W. Singleton
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Publication number: 20170200479Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: ApplicationFiled: March 24, 2017Publication date: July 13, 2017Inventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Li
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Patent number: 9607634Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: GrantFiled: February 17, 2016Date of Patent: March 28, 2017Assignee: Seagate Technology LLCInventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Li
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Patent number: 9454978Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).Type: GrantFiled: October 15, 2015Date of Patent: September 27, 2016Assignee: SEAGATE TECHNOLOGY LLCInventors: Konstantin Nikolaev, Taras Pokhil, Andrzej Stankiewicz, Mohammed Patwari, Eric Singleton
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Publication number: 20160163337Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: ApplicationFiled: February 17, 2016Publication date: June 9, 2016Inventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammed Patwari, Taras Pokhil, Jae-Young Li
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Publication number: 20160118066Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).Type: ApplicationFiled: October 15, 2015Publication date: April 28, 2016Inventors: Konstantin Nikolaev, Taras Pokhil, Andrzej Stankiewicz, Mohammed Patwari, Eric Singleton
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Patent number: 9269379Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: GrantFiled: June 30, 2014Date of Patent: February 23, 2016Assignee: Seagate Technology LLCInventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammend Patwari, Taras Pokhil, Jae-Young Li
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Publication number: 20150380019Abstract: Various embodiments of a magnetic stack are disclosed. In one or more embodiments, the magnetic stack includes first and second shield layers, and a magnetically responsive lamination disposed between the first and second shield layers. The magnetically responsive lamination can be configured to receive a sense current IS therethrough. The magnetic stack also includes a cooling element disposed between the first and second shield layers and thermally coupled to the magnetically responsive lamination. The cooling element can be configured to receive a bias current IB therethrough. And the cooling element can be configured to cool the magnetically responsive lamination during a read function.Type: ApplicationFiled: June 30, 2014Publication date: December 31, 2015Inventors: David Deen, Eric Singleton, Vasudevan Ramaswamy, Mohammend Patwari, Taras Pokhil, Jae-Young Li
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Publication number: 20150369879Abstract: Implementations described and claimed herein provide a system comprising an external magnetic field generator, wherein the external field magnetic field generator is configured to rock an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure.Type: ApplicationFiled: August 31, 2015Publication date: December 24, 2015Inventors: Konstantin Nikolaev, Victor Sapozhnikov, Taras Pokhil, Jae-Young Yi, Mohammed Patwari, Eric W. Singleton
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Patent number: 9196272Abstract: A reader sensor having a dusting layer having a thickness less than 5 Angstroms between and in contact with the AFM layer and with the pinned layer. The dusting layer comprises a non-magnetic, electrically conducting material, such as ruthenium or iridium. The reader sensor has a free layer composed of a material free of nickel (Ni).Type: GrantFiled: October 27, 2014Date of Patent: November 24, 2015Assignee: SEAGATE TECHNOLOGY LLCInventors: Konstantin Nikolaev, Taras Pokhil, Andrzej Stankiewicz, Mohammed Patwari, Eric Singleton
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Patent number: 9171559Abstract: A reader sensor that has a sensor stack with an AFM layer, a pinned stabilization layer, and a pinned layer, with the pinned stabilization layer closer to the AFM layer than to the pinned layer. The stack also includes a non-magnetic spacer layer between and in contact with the pinned stabilization layer and with the pinned layer. A magnetic coupling between the pinned stabilization layer and the pinned layer is no more than 50% of a magnetic coupling between the pinned stabilization layer and the AFM layer.Type: GrantFiled: September 15, 2014Date of Patent: October 27, 2015Assignee: SEAGATE TECHNOLOGY LLCInventors: Konstantin Nikolaev, Taras Pokhil, Andrzej Stankiewicz, Mohammed Patwari, Eric Singleton
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Patent number: 9147409Abstract: Implementations disclosed herein provide a method comprising rocking an effective annealing magnetic field between a first positive angle and a second negative angle compared to a desired pinning field orientation in an AFM/PL structure, wherein an angular amplitude of rocking the effective annealing magnetic field between a first positive angle and a second negative angle gradually decreases towards the desired orientation of pinning in the AFM/PL structure.Type: GrantFiled: May 30, 2014Date of Patent: September 29, 2015Assignee: SEAGATE TECHNOLOGY LLCInventors: Konstantin Nikolaev, Victor Sapozhnikov, Taras Pokhil, Jae-Young Yi, Mohammed Patwari, Eric W. Singleton
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Patent number: 8513752Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.Type: GrantFiled: September 13, 2012Date of Patent: August 20, 2013Assignee: Seagate Technology LLCInventors: Xilin Peng, Konstantin Nikolaev, Taras Pokhil, Victor Sapazhnikov, Yonghua Chen
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Publication number: 20130001721Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.Type: ApplicationFiled: September 13, 2012Publication date: January 3, 2013Applicant: SEAGATE TECHNOLOGY LLCInventors: Xilin Peng, Konstantin Nikolaev, Taras Pokhil, Victor Sapozhnikov, Yonghua Chen
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Patent number: 8294228Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.Type: GrantFiled: May 7, 2012Date of Patent: October 23, 2012Assignee: Seagate Technology LLCInventors: Xilin Peng, Konstantin Nikolaev, Taras Pokhil, Victor Sapazhnikov, Yonghua Chen
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Publication number: 20120217598Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.Type: ApplicationFiled: May 7, 2012Publication date: August 30, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Xilin Peng, Konstantin Nikolaev, Taras Pokhil, Victor Sapazhnikov, Yonghua Chen
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Patent number: 8183653Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.Type: GrantFiled: July 13, 2009Date of Patent: May 22, 2012Assignee: Seagate Technology LLCInventors: Xilin Peng, Konstantin Nikolaev, Taras Pokhil, Victor Sapazhnikov, Yonghua Chen
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Publication number: 20110006384Abstract: A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Xilin Peng, Konstantin Nikolaev, Taras Pokhil, Victor Sapozhnikov, Yonghua Chen
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Publication number: 20090251827Abstract: The present invention relates to a head having an air bearing surface for confronting the surface of a storage medium. The head includes a first pole that is spaced apart from a second pole. At least one non-magnetic spacer is positioned between the first pole and the second pole such that the first pole is magnetically decoupled from the second pole. In a further aspect, one or both of the first pole and the second pole can be elliptical in shape.Type: ApplicationFiled: June 30, 2004Publication date: October 8, 2009Applicant: Seagate Technology LLCInventors: Taras Pokhil, Nurul Amin, Steven Bozeman, Steven Kalderon, Andrzej Stankiewicz, Ned Tabat, Pu-Ling Lu, Johannes Van Ek, Janusz Nowak, Patrick Ryan