Patents by Inventor Tasuku Yano
Tasuku Yano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210319336Abstract: Provided are a material property prediction method and a material property prediction device capable of material search considering the interaction between partial structures by using explanatory variables that can be determined without using measured values. A material property prediction method using machine learning that builds a prediction model of the objective variable from explanatory variables based on a partial structure of a material, the material property prediction method including (a) a step of performing a first-principles calculation based on the partial structure of the material and randomly selected explanatory variables, and (b) a step of performing unsupervised classification machine learning and supervised learning based on the result of the first-principles calculation obtained in the above step (a) to build a prediction model, in which the sum of squares of the values obtained by the first-principles calculation is included in the explanatory variables in the step (b).Type: ApplicationFiled: March 17, 2021Publication date: October 14, 2021Inventor: Tasuku YANO
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Patent number: 9644955Abstract: A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage.Type: GrantFiled: November 26, 2012Date of Patent: May 9, 2017Assignee: Hitachi High-Technologies CorporationInventors: Tasuku Yano, Yasunari Sohda, Muneyuki Fukuda, Katsunori Onuki, Hajime Kawano, Naomasa Suzuki
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Patent number: 9312091Abstract: In order to provide a charged particle beam apparatus enabling reduction of deflecting coma aberration in cases such as where wide field-of-view scanning is carried out, a charged particle beam apparatus is provided with an electromagnetic objective lens and a stage on which a sample is placed, wherein the electromagnetic objective lens is provided with the following: a plurality of magnetic paths; an objective lens coil; an opening disposed so as to face the sample; an inner lens deflector disposed more on the objective lens coil side than the end of the opening.Type: GrantFiled: April 18, 2013Date of Patent: April 12, 2016Assignee: Hitachi High-Technologies CorporationInventors: Yasunari Sohda, Tasuku Yano, Muneyuki Fukuda, Noritsugu Takahashi, Hajime Kawano, Hiroyuki Ito
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Publication number: 20150076362Abstract: In order to provide a charged particle beam apparatus enabling reduction of deflecting coma aberration in cases such as where wide field-of-view scanning is carried out, a charged particle beam apparatus is provided with an electromagnetic objective lens and a stage on which a sample is placed, wherein the electromagnetic objective lens is provided with the following: a plurality of magnetic paths; an objective lens coil; an opening disposed so as to face the sample; an inner lens deflector disposed more on the objective lens coil side than the end of the opening.Type: ApplicationFiled: April 18, 2013Publication date: March 19, 2015Inventors: Yasunari Sohda, Tasuku Yano, Muneyuki Fukuda, Noritsugu Takahashi, Hajime Kawano, Hiroyuki Ito
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Publication number: 20140339425Abstract: A scanning electron beam device having: a deflector (5) for deflecting an electron beam (17) emitted from an electron source (1); an objective lens (7) for causing the electron beam to converge; a retarding electrode; a stage (9) for placing a wafer (16); and a controller (15); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage.Type: ApplicationFiled: November 26, 2012Publication date: November 20, 2014Inventors: Tasuku Yano, Yasunari Sohda, Muneyuki Fukuda, Katsunori Onuki, Hajime Kawano, Naomasa Suzuki
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Patent number: 8735814Abstract: The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.Type: GrantFiled: October 5, 2011Date of Patent: May 27, 2014Assignee: Hitachi High-Technologies CorporationInventors: Yasunari Sohda, Takeyoshi Ohashi, Tasuku Yano, Muneyuki Fukuda, Noritsugu Takahashi
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Publication number: 20130270435Abstract: The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.Type: ApplicationFiled: October 5, 2011Publication date: October 17, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Yasunari Sohda, Takeyoshi Ohashi, Tasuku Yano, Muneyuki Fukuda, Noritsugu Takahashi
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Patent number: 7928384Abstract: A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.Type: GrantFiled: August 12, 2008Date of Patent: April 19, 2011Assignee: Hitachi High-Technologies CorporationInventors: Zhaohui Cheng, Tasuku Yano, Seiko Omori
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Patent number: 7714288Abstract: Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved.Type: GrantFiled: April 29, 2008Date of Patent: May 11, 2010Assignee: Hitachi High-Technologies CorporationInventors: Tasuku Yano, Zhaohui Cheng, Takashi Furukawa, Osamu Nasu
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Publication number: 20090057557Abstract: A charged particle beam device including a function for measuring localized static charges on a sample. A primary charged particle beam scans a sample positioned in a mirror state to acquire an image. The acquired image may be an image of the sample or may be an image of a structural component in the charged particle optical system. The acquired image is compared with a standard sample image and the localized static charge is measured.Type: ApplicationFiled: August 12, 2008Publication date: March 5, 2009Inventors: Zhaohui Cheng, Tasuku Yano, Seiko Omori
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Publication number: 20080277583Abstract: Electrification affected on a surface of a sample which is caused by irradiation of a primary charged particle beam is prevented when plural frames are integrated to obtain an image of a predetermined area of the sample in a charged particle beam apparatus. The predetermined area of the sample is scanned with a primary electron beam from an electron gun, and plural frames are generated and integrated while detecting generated secondary electrons with a detector to obtain the image of the predetermined area. If it is determined by a detection signal of the detector that an electrification amount at the predetermined area becomes a specified value when generating plural frames, an electricity removal voltage is applied to a boosting electrode to remove or reduce the electrification, prior to generation of the next frame. Accordingly, the signal-to-noise ratio of the image obtained by integrating plural frames can be improved.Type: ApplicationFiled: April 29, 2008Publication date: November 13, 2008Inventors: Tasuku Yano, Zhaohui Cheng, Takashi Furukawa, Osamu Nasu