Patents by Inventor Tasuo Nakayama

Tasuo Nakayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field effect transistor
    Publication number: 20090230429
    Abstract: A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0?Lol/Lg?1 holds.
    Type: Application
    Filed: June 12, 2006
    Publication date: September 17, 2009
    Applicant: NEC CORPORATION
    Inventors: Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Tasuo Nakayama, Takashi Inoue, Kazuki Ota, Akio Wakejima, Kensuke Kasahara, Yasuhiro Murase, Kohji Matsunaga, Katsumi Yamanoguchi, Hidenori Shimawaki