Abstract: A technique to prevent peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and the members inside the apparatus and to suppress particle production without contamination of the inside of the apparatus. A member for a thin-film formation apparatus having inner walls and a method for manufacturing the member is provided. A plurality of unevenness is provided on at least a portion of the surface of the member and the inner walls on which unnecessary thin films are deposited. The surfaces are subjected to masking, and then, etching processing to form the plurality of unevenness. After the etching processing the masking is removed.

Abstract: A sputtering target is provided which provides early stabilization of the film-deposition rate of the sputtering target from its initial stage of use. The sputtering target surface subjected to erosion is formed with a surface-deformed layer. The surface-deformed layer is reduced by precision machining and removed by etching. The extent of etching is controlled so that the surface roughness (Ra) is in a range between 0.1% and 10% of the mean crystal grain diameter of the material constituting the target. The surface roughness (Ra) is defined as the mean roughness on the center line of the surface.

Abstract: A sputtering target is provided which provides early stabilization of the film-deposition rate of the sputtering target from its initial stage of use. The sputtering target surface subjected to erosion is formed with a surface-deformed layer. The surface-deformed layer is reduced by precision machining and removed by etching. The extent of etching is controlled so that the surface roughness (Ra) is in a range between 0.1% and 10% of the mean crystal grain diameter of the material constituting the target. The surface roughness (Ra) is defined as the mean roughness on the center line of the surface.

Abstract: A technique to prevent peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and the members inside the apparatus and to suppress particle production without contamination of the inside of the apparatus. A member for a thin-film formation apparatus having inner walls and a method for manufacturing the member is provided. A plurality of unevenness is provided on at least a portion of the surface of the member and the inner walls on which unnecessary thin films are deposited. The surfaces are subjected to masking, and then, etching processing to form the plurality of unevenness. After the etching processing the masking is removed.

Abstract: Implantation materials for the living body comprising: 10 to 4000 ppm of gaseous ingredients combined, mainly composed of oxygen; up to 100 ppm of ingredients other than the gaseous ingredients such as iron; and the balance titanium. An oxide film is formed on the surface, where necessary, by anodizing or the like. Titanium fixation wires for implanting in the living body composing: up to 300 ppm oxygen, up to 50 ppm hydrogen, up to 200 ppm nitrogen, and up to 400 ppm carbon, all as gaseous ingredients; up to 100 ppm of ingredients other than the gaseous ingredients such as iron; and the balance titanium. For applications where strength is the primary consideration, the wires comprise: from more than 100 to 1000 ppm of iron; up to 250 ppm oxygen, up to 50 ppm hydrogen, up to 170 ppm nitrogen, and up to 400 ppm carbon, all as gaseous ingredients; up to 100 ppm of iron and ingredients other than the gaseous ingredients; and the balance titanium.

Abstract: A sputtering target assembly composed of a sputtering target and a backing plate with or without an insert or inserts interposed therebetween as necessary characterized by having solid-phase bonded interface accompanied with no appreciable thermal diffusion layer and by said sputtering target substantially maintaining the quality characteristics including metallurgical characteristics and properties that the sputtering target had before it was bonded to the backing plate intact. The sputtering target assembly is obtained by solid-phase bonding the target and backing plate, with or without one or more insert sandwiched therebetween, at a low temperature and a low pressure under a vacuum. The solid-phase bonded interface gives reliable bonds of a bonded area percentage of 100% without non-bonded portions such as pores. The uniformity of microstructure and crystal orientation etc. of a target material is maintained intact with the suppression of crystal grain growth.

Abstract: A mosaic target comprising a plurality of target block pieces of different kinds of materials selected from the group consisting of Ta, Mo, Ti, W, Zr, Nb and Si, and their alloys and compounds, said target block pieces being combined in a stripe pattern or in a radial pattern characterized in that said target block pieces have their abutting interfaces solid-phase bonded at a temperature no more than the melting points of the target block piece materials. A typical example is a Ta-Mo mosaic target. The solid-phase bonded mosaic target blank is machined to a target which is bonded to a backing plate. The solid-phase bonding produces a mosaic target of a unitary construction, eliminating gaps among the target block pieces without sacrificing the properties of the individual block pieces. Abnormal discharge owing to gaps or contamination of the resulting film by concurrent sputtering of the solder or the backing plate is avoided.

Abstract: A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder or mechanically alloying silicon and a plurality of metal powders to provide an alloy powder, (b) and then pressing the metal silicide powder or alloy powder. The invention also relates to the metal silicide targets or alloy targets so manufactured. In the mechanical alloying step, rapid and fine division and agglomeration of the mixed powder is repeated until the particles of the material powders are finely divided to a submicron level. They form aggregates tens of microns in diameter. The aggregates gradually take an equi-axed shape. Homogenization of the material powder mixture progresses to mixing on the atomic level, until alloying takes place.

Abstract: A heat resistant martensitic stainless steel having an improved creep rupture strength is described. This steel consists of, in weight percent, 0.05% to 0.12% carbon, not more than 0.5% silicon, not more than 1.5% manganese, not more than 1.5% nickel, 9.0 to 13.0% chromium, 0.5 to 2.0% molybdenum, 0.05 to 0.50% vanadium, not more than 0.15% nitrogen, and, if desired, at least one of 0.02 to 0.50% columbium, 0.02 to 0.5% tantalum, 0.5 to 2.0% tungsten, and 0.0003 to 0.0100% boron, with the balance being iron and incidental or inevitable impurities, and wherein the weight ratio of carbon to nitrogen (C/N) is not more than 3:1.