Abstract: A vapor phase growth apparatus has a reaction chamber to form a film on an upper surface of a substrate by a vapor growth reaction, a gas supplier to supply a gas to the reaction chamber, a heater to heat the substrate from a back side of the substrate, and a controller to control an output of the heater. The controller has an electrical characteristics measuring instrument which measures electrical characteristics of the heater at predetermined time intervals and detects a variation value of the electrical characteristics between a newly value and previous value, and a threshold determiner which extracts a maximum value and a minimum value of a predetermined number of detected variation values and newly variation value of the electrical characteristics, calculates differences between the maximum value and the minimum value at the predetermined time intervals, and determines whether the difference exceeds a predetermined threshold.

Abstract: A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.

Abstract: A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.