Abstract: A substrate processing apparatus for processing a substrate with plasma including: a container including a first container member that forms a processing space in which the substrate is processed, and a second container member that forms a plasma generation space in which plasma is generated a gas introduction unit for introducing gas into the container; a plasma generation unit including an antenna that is provided in an external space of the container and configured to excite the gas in the plasma generation space with an electric field that is generated by a high-frequency voltage fed from a power supply; and a substrate holding unit that is capable of holding the substrate. A coating film that contains a semiconductor material is formed on a surface of the second container member that is arranged close to the antenna.

Abstract: A dry etching apparatus has a vacuum chamber provided therein with an RF electrode. On the RF electrode an object substrate(s) is placed. The RF electrode is covered with a substrate bed(s) and detachable dielectric members. The substrate bed(s) includes a dielectric portion and a conductive portion provided just under the dielectric portion. The conductive portion is equipotential in terms of direct current to the RF electrode. At least one gap extension is consituted of a gap(s) between the dielectric members, a gap(s) between the dielectric members and the substrate bed(s), etc. and extends from the surface of the RF electrode to the plasma space. The gap extension(s) extends zigzaggedly from the RF electrode to the plasma space so that the plasma space can not structurally be viewed from the surface of the RF electrode irrespective the dimesions of the substrate.