Abstract: The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.

Abstract: Problem To provide a method for manufacturing silica glass and device for manufacturing silica glass that facilitates the simple manufacture of a highly pure, bubble-free large flat-plate silica glass ingot in a short time. Solving Means In a method for manufacturing silica glass in which a silica glass powder is dropped from a powder supply device above a rotating furnace and layered in a centre portion of a furnace bottom, and then heat-fused and expanded in an outer circumferential direction of the furnace to form an ingot, the drop position and a fusion position of the silica glass powder is dispersed in the bottom portion of the furnace. The drop position of the silica glass powder is displaced from the centre portion of the bottom portion of the furnace, and the silica glass powder is preferably dispersed in the bottom portion of the furnace by the rotational movement of one or both of the powder supply device and the bottom portion of the furnace.

Abstract: To provide a black synthetic quartz glass with a transparent layer, which has high emissivity in the far infrared region, has excellent light-shielding properties, maintains the same degree of purity as synthetic quartz glass in terms of metal impurities, has high-temperature viscosity characteristics comparable to natural quartz glass, can undergo high-temperature processing like welding, and does not release carbon from its surface; together with a method for the production thereof. A porous silica glass body containing hydroxyl groups is subjected to a gas phase reaction in a volatile organosilicon compound atmosphere at a temperature between 100° C. and 1200° C. and, following the reaction, evacuation is commenced and, on reaching a degree of vacuum exceeding 10 mmHg (1343 Pa), heating is carried out at a temperature between 1200° C. and 2000° C. to produce a compact glass body.

Abstract: The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.

Abstract: To provide a technique with which a quartz glass jig and a doped quartz glass jig are regenerated by completely removing the impurities which are attached to the surface and the impurities which have diffused into the interior from quartz glass jigs which have been used in semiconductor production processes and then carrying out working repair and removing the contamination from the working processes as well. After use, the impurities are removed from the aforementioned quartz glass jigs in the said purification treatment process which includes a purification treatment process in which the quartz glass jigs are subjected to a purification treatment in a gaseous atmosphere which includes a halogen element at a temperature within the region above a prescribed temperature.

Abstract: As a jig material to use under plasma reaction for producing semiconductors, the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

Abstract: As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

Abstract: Corresponding to each notification system of position information different for each carrier and terminal, the position information about a user of an information terminal can be obtained, and a service can be provided according to position information without a service provider managing user position information. An information terminal user position information acquisition apparatus includes a terminal determination unit for determining the type of an information terminal depending on data transmitted from an information terminal of a user, and a position information extraction means for extracting the position information about the user from the data transmitted from the information terminal.

Abstract: A mixed quartz powder contains quartz powder and two or more types of doping element in an amount of from 0.1 to 20 mass %. The aforementioned doped elements include a first dope element selected from the group consisting of N, C and F, and a second dope element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, the lanthanides and the actinides. The “quartz powder” is a powder of crystalline quartz or it is a powder of glassy SiO2 particles. It is made form natural occurring quartz or it is fabricated synthetically. The “quartz powder” may be doped. The compounding ratio of the total amount (M1) of the aforementioned first elements and the total amount (M2) of the aforementioned second elements as the ratio of the number of atoms (M1)/(M2) is preferably from 0.1 to 20. Al as well as the aforementioned doped elements is preferably included in a mixed quartz powder of this invention.

Abstract: First of all, there is provided a production process of a synthetic quartz glass which has less impurity, has a high-temperature viscosity characteristic equal to or more than that of a natural quartz glass, and hardly deforms even in a high-temperature environment, and especially a production process of a highly heat resistant synthetic quartz glass which is free from the generation of bubbles and is dense. Secondly, there is provided a highly heat resistant synthetic quartz glass body which is easily obtained by the production process of the present invention, and especially a transparent or black quartz glass body which is free from the generation of bubbles, is dense, has high infrared absorption rate and emission rate, and has an extremely high effect for preventing diffusion of alkali metal. The process is a process of producing a highly heat resistant quartz glass body having an absorption coefficient at 245 nm of 0.

Abstract: It is an object of the present invention to provide a glass member resistant against plasma corrosion suitably used as a jig material in producing semiconductors, which exhibits excellent resistance against plasma corrosion, and which is free from the generation of particles. The above problem is solved by a glass member resistant to plasma corrosion, comprising a portion to be exposed to plasma gas, which is made of a glass material containing, as the essential component, one compound component selected from the group consisting of compounds expressed by one of the chemical formulae SiO2—Al2O3—CaO, SiO2—Al2O3—MgO, SiO2—BaO—CaO, SiO2—ZrO2—CaO, SiO2—TiO2—BaO, provided that the constitution ratio of the compound components is within the vitrification range.

Abstract: As a jig material to use under plasma reaction for producing semiconductors the present invention provides a quartz glass having resistance against plasma corrosion, particularly corrosion resistance against fluorine-based plasma gases, and which is usable without causing anomalies to silicon wafers; the present invention furthermore provides a quartz glass jig, and a method for producing the same. A quartz glass containing 0.1 to 20 wt % in total of two or more types of metallic elements, said metallic elements comprising at least one type of metallic element selected from Group 3B of the periodic table as a first metallic element and at least one type of metallic element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids as a second metallic element, provided that the maximum concentration of each of the second metallic elements is 1.0 wt % or less.

Abstract: An object of the present invention is to provide a quartz glass body, especially a quartz glass jig for plasma reaction in producing semiconductors having excellent resistance against plasma corrosion, particularly, excellent corrosion resistance against F-based gaseous plasma; and a method for producing the same. A body made of quartz glass containing a metallic element and having an improved resistance against plasma corrosion is provided that contains bubbles and crystalline phase at an amount expressed by projected area of less than 100 mm2 per 100 cm3.

Abstract: The invention provides a method for producing a quartz glass jig for use in semiconductor industries, which enables increasing the surface layer cleanliness simply and surely at low cost; it also provides a quartz glass jig improved in surface layer cleanliness. The inventive means for resolution are a method comprising processing a quartz glass raw material into a desired shape by a treatment inclusive of fire working, annealing for stress removal, and cleaning treatment to obtain the final product, the method is characterized by that it comprises performing gas phase etching step and gas phase purification step on the surface layer of the quartz glass jig after applying the annealing treatment for stress removal but before the cleaning treatment, wherein the gas phase purification step is carried out continuously after the gas phase etching step.

Abstract: Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible comprises a crucible body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wall surface of the crucible bass body and no expanded bubbles equal to ro more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.

Abstract: An object of the present invention is to provide a transparent ceramics which exhibits favorable slope efficiency well comparable to that of a single crystal when employed in solid lasers, yet having a uniform quality and internally free from pores, foreign matters, or granular structures. Another object of the present invention is to provide a production method therefor. The above problems have been overcome by a transparent YAG—ceramics (YAG: Y3Al5O12) the physical properties thereof is improved by doping a metallic element, provided that the concentration of the doped metallic elements is in a range of from 0.1 to 20% by weight, that the concentration of nitrogen is 500 ppm or lower, that said ceramics has pores and foreign matters accounting for less than 100 mm2 per 100 cm3 as expressed by their projected area, and that it has an internal transmittance for visible radiations of 50 %/cm of higher. The metallic element for doping the YAG—ceramic is Nd.

Abstract: Corresponding to each notification system of position information different for each carrier and terminal, the position information about a user of an information terminal can be obtained, and a service can be provided according to position information without a service provider managing user position information. An information terminal user position information acquisition apparatus includes a terminal determination unit for determining the type of an information terminal depending on data transmitted from an information terminal of a user, and a position information extraction means for extracting the position information about the user from the data transmitted from the information terminal.

Abstract: An object of the present invention is to provide a transparent ceramics which exhibits favorable slope efficiency well comparable to that of a single crystal when employed in solid lasers, yet having a uniform quality and internally free from pores, foreign matters, or granular structures. Another object of the present invention is to provide a production method therefor. The above problems have been overcome by a transparent ceramices the physical properties thereof is improved by doping a metallic element, provided that the concentration of the doped metallic elements is in a range of from 0.1 to 20% by weight, that a body of said ceramics has pores and foreign matters accounting for less than 100 mm2 per 100 cm3 as expressed by their projected area, and that is has an internal transmittance for visible radiations of 50%/cm or higher.

Abstract: A silica glass jig for semiconductor industry, characterized by having, on the surface of the jig, pyramidal projected structures with their cut-off apices and concave portions provided therebetween, and small projections are uniformly distributed thereon; the silica glass jig has a surface with many dimple-form concave portions each having a width of from 20 to 300 &mgr;m exist and there are grooves each having a width of from 0.5 to 50 &mgr;m at an interval of from 20 to 300 &mgr;m, and small projections each having a width of from 1 to 50 &mgr;m and having a height of from 0.1 to 10 &mgr;m are uniformly distributed between the grooves and in the grooves.

Abstract: The present invention has as its object to provide text information to a listener with voice when music is reproduced from a medium on which the text information is stored together with music data and to provide easily and smoothly use of the text information. The present invention is a text information read-out device for reading out text information from a medium on which text information is stored together with music data, including a text information extraction unit for extracting text information, a voice synthesizer obtaining voice data from the extracted text information, and a controller for controlling a read-out timing of the voice data in synchronism with reproduction of music data.