Abstract: A processing liquid ejection nozzle ejects a processing liquid used for a substrate processing. The processing liquid ejection nozzle includes a nozzle main body and an angle changing mechanism. The nozzle main body includes a first main body formed with a first flow path therein which communicates with a processing liquid supply path, and a second main body bent from the first main body and formed with a second flow path therein which communicates with the first flow path. The angle changing mechanism changes an angle of the nozzle main body in a horizontal direction with respect to a fixing member to which the nozzle main body is fixed.

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

Abstract: A processing liquid ejection nozzle ejects a processing liquid used for a substrate processing. The processing liquid ejection nozzle includes a nozzle main body and an angle changing mechanism. The nozzle main body includes a first main body formed with a first flow path therein which communicates with a processing liquid supply path, and a second main body bent from the first main body and formed with a second flow path therein which communicates with the first flow path. The angle changing mechanism changes an angle of the nozzle main body in a horizontal direction with respect to a fixing member to which the nozzle main body is fixed.

Abstract: A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

Abstract: A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of SiGe, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of SiO2, which exists under the removing target film, can be appropriately left.

Abstract: A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.

Abstract: A plate type heat pipe comprises: (1) a container including a plate member having a surface to which a heat generating part is connected, and another plate member positioned in such manner to face the plate member and to form a hollow portion therebetween, (2) a folded portion extended outward of the container, which is formed in such manner that end portions of respective plate member and another plate member are placed to form layers, and thus placed layers are folded in one side to cause the hollow portion to be hermetically sealed, and (3) a working fluid enclosed in the hollow portion.