Patents by Inventor Tatsuhiro Yabune
Tatsuhiro Yabune has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9731968Abstract: Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.Type: GrantFiled: June 8, 2009Date of Patent: August 15, 2017Assignee: STELLA CHEMIFA CORPORATIONInventors: Masahide Waki, Tatsuhiro Yabune, Kazuhiro Miyamoto, Kazutaka Hirano
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Patent number: 9059480Abstract: An object is to provide a method of manufacturing a hexafluorophosphate, that can simply and easily manufacture an inexpensive and high-quality hexafluorophosphate while suppressing the manufacturing cost, an electrolytic solution containing a hexafluorophosphate, and an electricity storage device including the electrolytic solution. The present invention relates to a method of manufacturing a hexafluorophosphate, which comprises reacting at least a phosphorus compound with a fluoride represented by MFs.r(HF) (wherein 0?r?6, 1?s?3, and M is at least one kind selected from the group consisting of Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe) to produce a hexafluorophosphate represented by the chemical formula M(PF6)s.Type: GrantFiled: August 4, 2009Date of Patent: June 16, 2015Assignee: STELLA CHEMIFA CORPORATIONInventors: Masahide Waki, Tatsuhiro Yabune, Kazuhiro Miyamoto, Kazutaka Hirano
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Publication number: 20150072134Abstract: Magnesium fluoride particles with a low refractive index excellent in film formability are provided. The magnesium fluoride particles each include at least one magnesium fluoride particulate. The at least one magnesium fluoride particulate each has pores that support a supported substance. Further, the at least one magnesium fluoride particulate includes a plurality of particulates. A grain boundary void-like pore serving as a gap that supports the supported substance is present between particulates adjacent to each other of the plurality of particulates.Type: ApplicationFiled: May 27, 2013Publication date: March 12, 2015Applicant: STELLA CHEMIFA CORPORATIONInventors: Tatsuhiro Yabune, Megumi Tomisaki, Masanori Uraya, Hiroaki Takatori
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Patent number: 8470278Abstract: A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs?A(PF6)s, in which s is in the range of 1?s?3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.Type: GrantFiled: August 4, 2009Date of Patent: June 25, 2013Assignee: Stella Chemifa CorporationInventors: Masahide Waki, Tatsuhiro Yabune, Kazuhiro Miyamoto, Kazutaka Hirano
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Patent number: 8066898Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.Type: GrantFiled: September 25, 2008Date of Patent: November 29, 2011Assignee: Stella Chemifa Kabushiki KaishaInventors: Hirohisa Kikuyama, Tatsuhiro Yabune, Masayuki Miyashita, Tadahiro Ohmi
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Publication number: 20110189538Abstract: A method of manufacturing phosphorus pentafluoride and hexafluorophosphate can suppress the manufacturing cost and also can manufacture high-quality phosphorus pentafluoride from an inexpensive and low-quality raw material. The raw material for the method can include at least a phosphorus atom and a fluorine atom. These are brought into contact with a carrier gas, and a phosphorus pentafluoride is extracted and separated into the carrier gas. A method of manufacturing hexafluorophosphate includes reacting fluoride with the resulting phosphorus pentafluoride according to the following chemical reaction scheme: sPF5+AFs?A(PF6)s, in which s is in the range of 1?s?3, and A is at least one of the following: Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe.Type: ApplicationFiled: August 4, 2009Publication date: August 4, 2011Applicant: STELLA CHEMIFA CORPORATIONInventors: Masahide Waki, Tatsuhiro Yabune, Kazuhiro Miyamoto, Kazutaka Hirano
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Publication number: 20110135555Abstract: Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF3, SiF4, GeF4, PF5 or AsF5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.Type: ApplicationFiled: June 8, 2009Publication date: June 9, 2011Applicant: STELLA CHEMIFA CORPORATIONInventors: Masahide Waki, Tatsuhiro Yabune, Kazuhiro Miyamoto, Kazutaka Hirano
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Publication number: 20110097626Abstract: An object is to provide a method of manufacturing a hexafluorophosphate, that can simply and easily manufacture an inexpensive and high-quality hexafluorophosphate while suppressing the manufacturing cost, an electrolytic solution containing a hexafluorophosphate, and an electricity storage device including the electrolytic solution. The present invention relates to a method of manufacturing a hexafluorophosphate, which comprises reacting at least a phosphorus compound with a fluoride represented by MFs.r(HF) (wherein 0?r?6, 1?s?3, and M is at least one kind selected from the group consisting of Li, Na, K, Rb, Cs, NH4, Ag, Mg, Ca, Ba, Zn, Cu, Pb, Al and Fe) to produce a hexafluorophosphate represented by the chemical formula M(PF6)s.Type: ApplicationFiled: August 4, 2009Publication date: April 28, 2011Applicant: STELLA CHEMIFA CORPORATIONInventors: Masahide Waki, Tatsuhiro Yabune, Kazuhiro Miyamoto, Kazutaka Hirano
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Publication number: 20090298295Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.Type: ApplicationFiled: July 20, 2009Publication date: December 3, 2009Applicant: STELLA CHEMIFA KABUSHIKI KAISHAInventors: Hirohisa KIKUYAMA, Masayuki MIYASHITA, Tatsuhiro YABUNE, Tadahiro OHMI
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Publication number: 20090075486Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.Type: ApplicationFiled: September 25, 2008Publication date: March 19, 2009Inventors: Hirohisa Kikuyama, Tatsuhiro Yabune, Masayuki Miyashita, Tadahiro Ohmi
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Publication number: 20070215835Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients like the one used for the construction of a liquid crystal-based or organic electroluminescence-based flat panel display device, without evoking crystal precipitation and surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution is adjusted.Type: ApplicationFiled: September 2, 2002Publication date: September 20, 2007Inventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Publication number: 20070029519Abstract: A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH4F), at least one acid whose dissociation constant is larger than that of HF. The concentration of the acid in the solution can advantageously be adjusted to maximize the etching rate.Type: ApplicationFiled: August 26, 2002Publication date: February 8, 2007Inventors: Hirohisa Kikuyama, Tatsuhiro Yabune, Masayuki Miyashita, Tadahiro Ohmi
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Patent number: 6821452Abstract: An etching agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.Type: GrantFiled: June 27, 2003Date of Patent: November 23, 2004Inventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Publication number: 20040209481Abstract: The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1 % by weight.Type: ApplicationFiled: May 12, 2004Publication date: October 21, 2004Inventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 6797194Abstract: The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.Type: GrantFiled: December 1, 2000Date of Patent: September 28, 2004Assignee: Stella Chemifa Kabushiki KaishaInventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Publication number: 20040108299Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.Type: ApplicationFiled: June 27, 2003Publication date: June 10, 2004Applicant: STELLA CHEMIFA KABUSHIKI KAISHAInventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 6585910Abstract: An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and prevent roughness on the surface of the semiconductor after etching.Type: GrantFiled: March 26, 1999Date of Patent: July 1, 2003Assignee: Stella Chemifa Kabushiki KaishaInventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 6027571Abstract: A fine surface treatment for micromachining having an etching speed whose difference is smaller to oxide films each obtained by a different method as well as conditions of forming film or having different concentration of various impurities such as P, B and As in the film, and also having a practical etching speed to each of the films. The surface treatment for micromachining contains 0.1 to 8 weight percent of hydrogen fluoride and not less than 40 weight percent to not more than 47 weight percent of ammonium fluoride. It should be noted that it is preferable the surface treatment agent contains 0.001 to 1 weight percent of surfactant.Type: GrantFiled: June 29, 1998Date of Patent: February 22, 2000Assignee: Stella Chemifa Kabushiki KaishaInventors: Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi
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Patent number: 5714407Abstract: An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).Type: GrantFiled: March 31, 1995Date of Patent: February 3, 1998Assignees: Frontec Incorporated, Tadahiro OhmiInventors: Matagoro Maeno, Masayuki Miyashita, Hirohisa Kikuyama, Tatsuhiro Yabune, Jun Takano, Hirofumi Fukui, Satoshi Miyazawa, Chisato Iwasaki, Tadahiro Ohmi, Yasuhiko Kasama, Hitoshi Seki