Abstract: An antenna device includes an antenna array in which a plurality of antennas each including a negative differential resistance element and a resonance circuit are arranged, a voltage bias circuit which applies a voltage to the antenna array, a first shunt element which is connected between the antenna array and the voltage bias circuit in parallel relation to each of the negative differential resistance element and the voltage bias circuit, and in which a first resistor and a first capacitor of the first shunt element are connected in series, and a second shunt element which is connected between the first shunt element and the voltage bias circuit in parallel relation to each of the negative differential resistance element and the voltage bias circuit, and in which a second resistor and a second capacitor of the second shunt element are connected in series.

Abstract: An antenna device includes an antenna array constituted by a plurality of antennas disposed on a support substrate, a signal-processing substrate configured to be stacked with the support substrate, a plurality of rectifier elements disposed correspondingly to each of the plurality of antennas, and a peripheral electrode disposed between the plurality of antennas on the support substrate The antenna includes a first part electrically connected to one of terminals of the rectifier element, a second part electrically connected to the other terminal of the rectifier element, a first lead line connected to the first part, a second lead line connected to the second part, and a first through electrode connected to the first lead line and the signal-processing substrate, and the second lead line of the antenna is connected to the peripheral electrode.

Abstract: A photoelectric conversion device including an effective pixel region including a plurality of effective pixels and a peripheral region provided outside the effective pixel region, the photoelectric conversion device comprising: a wiring layer; an upper electrode; and a photoelectric conversion film provided extensively over the effective pixel region and the peripheral region, wherein each of the plurality of effective pixels includes a pixel electrode disposed between the wiring layer and the photoelectric conversion film in a depth direction, the peripheral region includes a conductive layer disposed between the wiring layer and the photoelectric conversion film in the depth direction, and the upper electrode and the conductive layer are at a same potential.

Abstract: In an inspection system that uses terahertz waves, in order to improve the inspection precision for objects and the like, the inspection system has an illumination unit having a plurality of illumination elements that radiate terahertz waves; a camera unit that captures images of the terahertz waves that have been reflected off of an object that has been irradiated by the plurality of illumination elements; and a control unit that performs control so as to make the light emission timings for the plurality of illumination elements different.

Abstract: A detection system including a plurality of terahertz light sources; and a plurality of terahertz-wave detecting devices which detect terahertz waves, wherein the plurality of terahertz light source includes a first terahertz light source which outputs the terahertz waves in a first on/off pattern with a first cycle, and a second terahertz light source which outputs the terahertz waves in a second on/off pattern with a second cycle which is different from the first cycle.

Abstract: A photoelectric conversion apparatus includes a plurality of photoelectric conversion units. Each of the plurality of photoelectric conversion units includes a photoelectric conversion element, a first amplification transistor, and a load transistor. Each of a first control unit and a second control unit includes a connection transistor including a gate and a drain connected to the gate, a reference current source and a first switch. The gate of the connection transistor of the first control unit is connected to each gate of the plurality of load transistors corresponding to the plurality of photoelectric conversion elements disposed in a first row. The gate of the connection transistor of the second control unit is connected to each gate of the plurality of load transistors corresponding to the plurality of photoelectric conversion elements disposed in a second row.

Abstract: A photo-detection device includes a quench resistor having one terminal connected to a first node, an avalanche photodiode having one terminal connected to a second node, a waveform shaping circuit having an input terminal connected to the other terminal of the quench resistor and the other terminal of the avalanche photodiode, and a switch arranged on a path between the second node and the input terminal of the waveform shaping circuit.

Abstract: A photoelectric conversion device including an effective pixel region including a plurality of effective pixels and a peripheral region provided outside the effective pixel region, the photoelectric conversion device comprising: a wiring layer; an upper electrode; and a photoelectric conversion film provided extensively over the effective pixel region and the peripheral region, wherein each of the plurality of effective pixels includes a pixel electrode disposed between the wiring layer and the photoelectric conversion film in a depth direction, the peripheral region includes a conductive layer disposed between the wiring layer and the photoelectric conversion film in the depth direction, and the upper electrode and the conductive layer are at a same potential.

Abstract: A photoelectric conversion apparatus includes a plurality of photoelectric conversion units. Each of the plurality of photoelectric conversion units includes a photoelectric conversion element, a first amplification transistor, and a load transistor. Each of a first control unit and a second control unit includes a connection transistor including a gate and a drain connected to the gate, a reference current source and a first switch. The gate of the connection transistor of the first control unit is connected to each gate of the plurality of load transistors corresponding to the plurality of photoelectric conversion elements disposed in a first row. The gate of the connection transistor of the second control unit is connected to each gate of the plurality of load transistors corresponding to the plurality of photoelectric conversion elements disposed in a second row.

Abstract: A photoelectric conversion device including: a photoelectric conversion unit; a storing unit configured to store a photoelectric conversion signal from the photoelectric conversion unit; a first amplifier transistor configured to output a photoelectric conversion signal from the storing unit; a transistor configured to write an output signal of the first amplifier transistor to a first terminal of a holding capacitor; a second amplifier transistor, a gate of which is connected to the first terminal, and which is configured to output a voltage in accordance with a voltage of the first terminal; and a control unit configured to switch a voltage of a second terminal of the holding capacitor.

Abstract: An element substrate of a liquid ejection head includes: a base material; an insulating film positioned on the base material; a heating resistance element for generating heat energy for ejecting a liquid; a protective film for covering the heating resistance element; a first electrical wiring layer arranged in the insulating film, for supplying a current to the heating resistance element; a second electrical wiring layer arranged on a layer different from the first electrical wiring layer in the insulating film, for supplying a current to the heating resistance element; and at least one connecting member extending into the insulating film to connect the first electrical wiring layer and the heating resistance element, for causing the current to flow in a first direction, the heating resistance element including a connecting region, extending in a second direction intersecting the first direction, to which the at least one connecting member is connected.

Abstract: Provided is a photoelectric conversion device including: a semiconductor substrate; a photoelectric conversion layer; a first electrode, a second electrode, and a third electrode. The third electrode is arranged between the first electrode and the second electrode in a first direction. A gap between the third electrode and the first electrode or the second electrode is 0.8 times or more at least one of the first length, the second length, and the third length in the first direction.

Abstract: A pixel includes a first electrode, a second electrode facing to the first electrode in a first direction, and a third electrode disposed between the first and second electrodes. A photoelectric conversion layer is disposed on the electrodes. Signals for phase difference detection are read from the first and second electrodes. Furthermore, a signal for imaging is read from the third electrode.

Abstract: A recording element substrate includes a substrate, a plurality of energy generating elements arranged on the substrate to form an element row, a plurality of supply ports arranged along the element row to form a supply port row, and a plurality of supply paths extending from the plurality of supply ports along the thickness direction of the substrate, wherein a plurality of beam portions disposed between adjacent supply ports in the direction of the supply port row has a plurality of conductor layers in which a conductor layer including a power supply conductor connected to the energy generating elements and a conductor layer including a ground conductor connected to the energy generating elements, are stacked along the thickness direction of the substrate, and wherein at least one of the plurality of conductor layers is occupied by one power supply conductor or one ground conductor.

Abstract: A photoelectric conversion device in which pixels are arranged in a matrix, wherein each of the pixels includes: at least one pixel electrode, a photoelectric conversion layer, a counter electrode, and a pixel circuit that is connected to the pixel electrode and outputs a signal from the pixel electrode, wherein a pixel circuit group corresponding to a pixel group formed of the pixels positioned adjacent to each other is disposed below a pixel electrode group of the pixel group, wherein the pixel group includes a first pixel, and a second pixel having more independent pixel electrodes than the first pixel, wherein each of the pixel circuits is connected to each of the independent pixel electrodes, and wherein the first pixel overlaps with the pixel circuit that corresponds to the first pixel, and with the pixel circuit that does not correspond to the first pixel in a plan view.

Abstract: A pixel includes a first electrode, a second electrode facing to the first electrode in a first direction, and a third electrode disposed between the first and second electrodes. A photoelectric conversion layer is disposed on the electrodes. Signals for phase difference detection are read from the first and second electrodes. Furthermore, a signal for imaging is read from the third electrode.

Abstract: A pixel includes a first electrode, a second electrode facing to the first electrode in a first direction, and a third electrode disposed between the first and second electrodes. A photoelectric conversion layer is disposed on the electrodes. Signals for phase difference detection are read from the first and second electrodes. Furthermore, a signal for imaging is read from the third electrode.

Abstract: An imaging apparatus according to the present invention includes a substrate including a plurality of pixel circuits arranged thereon and a semiconductor layer disposed on the substrate. Each of the plurality of pixel circuits includes an amplification transistor configured to output a signal based on charge generated in the semiconductor layer. The charge generated in the semiconductor layer is transferred in a first direction parallel to a surface of the substrate.

Abstract: A photoelectric conversion element includes a first photoelectric conversion unit configured to generate an electron serving as a signal charge, a second photoelectric conversion unit configured to generate a hole serving as a signal charge, a first floating diffusion region to which the electron generated in the first photoelectric conversion unit is transferred, a second floating diffusion region to which the hole generated in the second photoelectric conversion unit is transferred, an amplifying transistor including a gate electrically connected to the first floating diffusion region and the second floating diffusion region, a first charge ejection unit configured to eject the electron generated in the first photoelectric conversion unit, and a second charge ejection unit configured to eject the hole generated in the second photoelectric conversion unit, wherein the first photoelectric conversion unit and the second photoelectric conversion unit are arranged along a principal surface of a semiconductor sub

Abstract: A photoelectric conversion device includes a first photoelectric conversion portion configured to generate electrons; a second photoelectric conversion portion configured to generate holes; a charge-to-voltage conversion portion including an n-type first semiconductor region configured to collect the generated electrons and a p-type second semiconductor region configured to collect the generated holes, the charge-to-voltage conversion portion being configured to convert a charge that is based on the electrons and the holes to a voltage; and a signal generation portion configured to generate a signal corresponding to the voltage, the signal generation portion including an amplification transistor.