Abstract: A semiconductor device includes first and second electrodes, a semiconductor part between the first and second electrodes, first to third control electrodes between the semiconductor part and the first electrode, first and second control terminals electrically connected respectively to the first and second control electrodes. The first to third control electrodes each are provided in a trench of the semiconductor part. The third control electrode is provided between the first and second control electrodes. The semiconductor part includes first and third layers of a first conductivity type, and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The first electrode is electrically connected to the second and third layers.

Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and first and second insulating members. The semiconductor member is located between the second and first electrodes, and includes a first semiconductor region a second semiconductor region between the first semiconductor region and the first electrode, a third semiconductor region between the second semiconductor region and the first electrode, a fourth semiconductor region between the second semiconductor region and the first electrode, a fifth semiconductor region between the first semiconductor region and the second electrode, a sixth semiconductor region between the fifth semiconductor region and the second electrode, and a seventh semiconductor region between the fifth semiconductor region and the second electrode. A portion of the first insulating member is between the third electrode and the semiconductor member.

Abstract: A semiconductor device includes a first electrode on a first surface of a semiconductor part, a second electrode on a second surface opposite to the first surface, and first and second control electrodes in trenches, respectively, at a first surface side. The semiconductor part includes first to sixth layers. The second and third layers of a second conductivity type are selectively provided between the first layer of a first conductivity type and the first electrode. The third layer includes a second conductivity type impurity with a higher concentration than a concentration of a second-conductivity-type impurity in the second layer. The fourth layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fifth layer of the second conductivity type and the sixth layer of the first conductivity type are selectively provided between the first layer and the second electrode.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, first and second electrodes, a gate electrode, a gate terminal, a first conductive member, a first terminal, and a first insulating member. The semiconductor member includes first and second semiconductor regions, and a third semiconductor region provided between the first and second semiconductor regions. The first electrode is electrically connected to the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The gate terminal is electrically connected to the gate electrode. The first conductive member is electrically insulated from the first and second electrodes, and the gate electrode. The first terminal is electrically connected to the first conductive member.

Abstract: According to one embodiment, a semiconductor device includes first, and second conductive members, a first electrode including first and second electrode regions, a second electrode electrically connected to a first semiconductor film portion, a first semiconductor region including first to fourth partial regions, a second semiconductor region including the first semiconductor film portion, a third semiconductor region including a first semiconductor layer portion, a fourth semiconductor region provided between the first electrode and the first semiconductor region, and a first insulating member including insulating portions. The first partial region is between the first electrode region and the first conductive member. The second partial region is between the second electrode region and the second conductive member. The third partial region is between the first and second partial regions and between the first electrode and the fourth partial region.

Abstract: According to one embodiment, a semiconductor device includes first, second, third semiconductor members, a first conductive member, a connection member, and an insulating member. The first electrode includes first, second, and third electrode regions. A direction from the first toward second electrode is along a first direction. The second electrode includes fourth, fifth, and sixth electrode regions. The first semiconductor member includes first, second, third, fourth, and fifth partial regions. The second semiconductor member includes first and second semiconductor regions. The third semiconductor member includes third and fourth semiconductor regions. The third electrode is provided between the third partial region and the sixth electrode region in the first direction. The connection member is electrically connected to the first conductive member and the second electrode. The insulating member includes first, second, third, fourth, and fifth portions.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween and first to third control electrodes between the first electrode and the semiconductor part. The semiconductor part includes first and third layers of a first-conductivity-type and second and fourth layers of a second-conductivity-type. The second, third and fourth layers are provided between the first layer and the first electrode, between the second layer and the first electrode, and between the first layer and the second electrode, respectively. To the first to third control electrodes, first to third voltages greater than the threshold voltage thereof are applied at first to third timings, respectively. The third, second and first voltages are reduced to a lower level than the threshold voltage at a fourth timing after the first to third timings, at a fifth timing after the fourth timing and at a sixth timing after the fifth timing, respectively.

Abstract: A semiconductor device includes first and second electrode, a semiconductor part therebetween, and first and second control electrode. The first control electrode is provided in a first trench between the first electrode and the semiconductor part. The second control electrode is provided in a second trench between the second electrode and the semiconductor part. The semiconductor part includes first, third, fifth and sixth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The sixth layer is provided between the first layer and the second electrode. The second electrode is electrically connected to the first layer via a first-conductivity-region including the sixth layer.

Abstract: According to one embodiment, a semiconductor device includes first, and second conductive members, first, second, and third semiconductor regions, and an insulating part. A direction from the first conductive member toward the second conductive member is along a first direction. The first semiconductor region includes first and second partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The first conductive member is between the first partial region and the second conductive member. A direction from the second partial region toward the second semiconductor region is along the first direction. A direction from the second conductive member toward the second semiconductor region is along the second direction. The third semiconductor region is between the second partial region and the second semiconductor region. The insulating part includes a first insulating region, a second insulating region, and a third insulating region.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part therebetween, and a control electrode between the semiconductor part and the first electrode. The semiconductor part includes first, third and fifth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer and the fifth layer are selectively provided between the first layer and the second electrode. In a method for controlling the semiconductor device, first to third voltages are applied in order to the control electrode while a p-n junction between the first and second layers is biased in a forward direction. The second and third voltages are greater than the first voltage, and the third voltage is less than the second voltage.

Abstract: A semiconductor device includes a first electrode on a first surface of a semiconductor part, a second electrode on a second surface opposite to the first surface, and first and second control electrodes in trenches, respectively, at a first surface side. The semiconductor part includes first to sixth layers. The second and third layers of a second conductivity type are selectively provided between the first layer of a first conductivity type and the first electrode. The third layer includes a second conductivity type impurity with a higher concentration than a concentration of a second-conductivity-type impurity in the second layer. The fourth layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fifth layer of the second conductivity type and the sixth layer of the first conductivity type are selectively provided between the first layer and the second electrode.

Abstract: A semiconductor device includes first and second electrodes, a semiconductor part between the first and second electrodes, first to third control electrodes between the semiconductor part and the first electrode, first and second control terminals electrically connected respectively to the first and second control electrodes. The first to third control electrodes each are provided in a trench of the semiconductor part. The third control electrode is provided between the first and second control electrodes. The semiconductor part includes first and third layers of a first conductivity type, and second and fourth layers of a second conductivity type. The second layer is provided between the first layer and the first electrode. The third layer is selectively provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The first electrode is electrically connected to the second and third layers.

Abstract: According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

Abstract: A current interrupting device has a first transistor that is normally off and that switches whether to interrupt a current path, and a controller that controls a gate voltage of the first transistor such that, when no overcurrent flows through the current path, the first transistor is operated in an active region, and when an overcurrent flows through the current path, the first transistor is operated in a saturation region to limit the overcurrent, and then, the current path is interrupted.

Abstract: According to one embodiment, a control circuit is connected to an element portion including a first element. The first element is an RC-IGBT. The first element includes a first gate, a first other gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. In the second operation, the control circuit supplies a first pulse to the first gate and supplies a first other pulse to the first other gate. The first pulse has a first start time and a first end time.

Abstract: According to one embodiment, a control circuit is connected to an element portion including a first element. The first element is an RC-IGBT. The first element includes a first gate, a first other gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. In the second operation, the control circuit supplies a first pulse to the first gate and supplies a first other pulse to the first other gate. The first pulse has a first start time and a first end time.

Abstract: According to one embodiment, a control circuit is connected to an element portion including a first element. The first element includes a first gate, a first collector, and a first emitter. The control circuit performs a first operation and a second operation. In at least a portion of the first operation, the control circuit causes a first current to flow from the first collector toward the first emitter. In at least a portion of the second operation, the control circuit causes a second current to flow from the first emitter toward the first collector. A first time constant of a switching of the first element in the first operation is different from a second time constant of a switching of the first element in the second operation.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to fourth semiconductor regions, and a first insulating portion. The first semiconductor region includes first to third partial regions. The first partial region is provided between the first electrode and the second electrode. The second partial region is provided between the first and third electrodes. The second semiconductor region includes fourth to sixth partial regions. The fourth partial region is provided between the first partial region and the second electrode. The fifth partial region is provided between the third semiconductor region and at least a portion of the second partial region. The sixth partial region is provided between the third partial region and the third semiconductor region. The fourth semiconductor region is provided between the first and fourth partial regions. The first insulating portion is provided between the second partial region and the third electrode.

Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first electrode, a second electrode and first to fourth semiconductor regions. The second electrode includes a first conductive region and a second conductive region. The first semiconductor region is provided between the first electrode and the first conductive region and between the first electrode and the second conductive region. The second semiconductor region includes a first partial region and a second partial region. The first partial region is provided between the first electrode and the first conductive region. The second partial region is provided between the first electrode and the second conductive region. The third semiconductor region is provided between the second partial region and the second conductive region. The fourth semiconductor region is provided between the third semiconductor region and the second conductive region.

Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first electrode, a second electrode and first to fourth semiconductor regions. The second electrode includes a first conductive region and a second conductive region. The first semiconductor region is provided between the first electrode and the first conductive region and between the first electrode and the second conductive region. The second semiconductor region includes a first partial region and a second partial region. The first partial region is provided between the first electrode and the first conductive region. The second partial region is provided between the first electrode and the second conductive region. The third semiconductor region is provided between the second partial region and the second conductive region. The fourth semiconductor region is provided between the third semiconductor region and the second conductive region.