Patents by Inventor Tatsuo Fuji

Tatsuo Fuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MNOS Type non-volatile memory device and method of manufacturing the same
    Patent number: 4519051
    Abstract: The ratio of gases during chemical vapor deposition of a silicon nitride layer in an MNOS Memory device is gradially varied during the deposition process to achieve a silicon nitride layer having a trap state distribution which gradually decreases from the oxide-nitride interface to the oxide-metal interface.
    Type: Grant
    Filed: October 18, 1982
    Date of Patent: May 21, 1985
    Assignee: Nippon Electric Co., Ltd.
    Inventor: Tatsuo Fuji
  • Semiconductor camera-tube target
    Patent number: 3988758
    Abstract: A vidicon tube target includes a three-ply semi-insulating layer structure which comprises a bottom layer of CeO.sub.2, an intermediate layer of CePbO.sub.2.sub.+x (0<x<1), and a top layer of PbO. A camera tube incorporating this target operates with reduced initial dark current and with extreme stability.
    Type: Grant
    Filed: July 1, 1975
    Date of Patent: October 26, 1976
    Assignee: Nippon Electric Company, Ltd.
    Inventor: Tatsuo Fuji