Abstract: A hot-stretch-reduced electric resistance welded pipe has a base metal portion and a weld portion, the base metal portion has a predetermined chemical composition, a Ti/N value obtained by dividing Ti content by N content is 3.0 or more, in a microstructure of the weld portion, the average grain diameter is 10.0 ?m or less, the area ratio of ferrite is 20% or more, and the remaining structure includes at least one or more of pearlite and bainite/martensite, and in a texture of the weld portion, the accumulation intensity of a {001} plane is 6.0 or less, and a critical cooling rate Vc90 of the base metal portion is 5° C./s to 90° C./s.

Abstract: Provided is a air purge device that can effectively discharge air.

Abstract: A treatment device 1 includes: a treatment tank 2; an electrolytic cell 6 including diamond electrodes continuous from a pipe 4 including a circulation pump 5; and a pipe 7 supplying from the electrolytic cell 6 to the treatment tank 2. The treatment tank 2 and the electrolytic cell 6 are filled with sulfuric acid having a predetermined concentration; current is applied to the electrolytic cell 6 to electrolyze the sulfuric acid and a persulfuric acid solution S is generated by electrolyzing the sulfuric acid; and the persulfuric acid solution S is supplied to the treatment tank 2 through the pipe 7. Besides, inside the treatment tank 2, a PPS resin board 8 is vertically suspended in a state of being fixed to a fixture 8A, and the PPS resin board 8 is treated by the persulfuric acid solution S.

Abstract: A treatment device 1 includes: a treatment tank 2; an electrolytic cell 6 including diamond electrodes continuous from a pipe 4 including a circulation pump 5; and a pipe 7 supplying from the electrolytic cell 6 to the treatment tank 2. The treatment tank 2 and the electrolytic cell 6 are filled with sulfuric acid having a predetermined concentration; current is applied to the electrolytic cell 6 to electrolyze the sulfuric acid and a persulfuric acid solution S is generated by electrolyzing the sulfuric acid; and the persulfuric acid solution S is supplied to the treatment tank 2 through the pipe 7. Besides, inside the treatment tank 2, a PPS resin board 8 is vertically suspended in a state of being fixed to a fixture 8A, and the PPS resin board 8 is treated by the persulfuric acid solution S.

Abstract: A treatment device 1 includes: a treatment tank 2; an electrolytic cell 6 including diamond electrodes continuous from a pipe 4 including a circulation pump 5; and a pipe 7 supplying from the electrolytic cell 6 to the treatment tank 2. The treatment tank 2 and the electrolytic cell 6 are filled with sulfuric acid having a predetermined concentration; current is applied to the electrolytic cell 6 to electrolyze the sulfuric acid and a persulfuric acid solution S is generated by electrolyzing the sulfuric acid; and the persulfuric acid solution S is supplied to the treatment tank 2 through the pipe 7. Besides, inside the treatment tank 2, a polypropylene resin board 8 which is a treatment target is vertically suspended in a state of being fixed to a fixture 8A, and the polypropylene resin board 8 is treated by the persulfuric acid solution S.

Abstract: The cathode member 4 and the anode member 5 are respectively connected to a negative electrode and a positive electrode of a direct current power supply 3. In the processing device 1, the anode member 5 is a member to be processed, and a member using a thin film made of titanium or a titanium alloy is used therefor. A sulfuric acid solution or an electrolytic sulfuric acid solution S having an oxidizing agent concentration of 5 g/L or more with a hydrofluoric compound dissolved therein at 0.5% by weight or less is accommodated in the processing tank 2, and electrolysis processing is performed at a current density of 1-20 A/dm2. The processing device is applicable to a method for manufacturing, from a titanium or titanium alloy thin film, a thin oxide film of titanium or a titanium alloy having holes of 100 nm or less.

Abstract: A treatment device has: a treatment tank provided with a constant temperature heater on the outer periphery; an electrolytic cell continuing from a pipe provided with a circulation pump; and a pipe for supply to the treatment tank from the electrolytic cell. Within the electrolytic cell are provided an anode and a cathode formed from diamond electrodes and a bipolar electrode disposed between the two. The treatment tank and the electrolytic cell are filled with a prescribed concentration of sulfuric acid. The treatment device is configured such that a persulfate solution such as peroxydisulfuric acid is generated by electrolysis of the sulfuric acid by making a prescribed current flow from a direct current power supply unit to the anode and the cathode, and this persulfate solution can be supplied to the treatment tank via the pipe.

Abstract: Treatment equipment has a treatment tank provided with a thermostatic heater on its outer periphery and a supply tank connected through a pipe and a pump. The treatment tank and the supply tank are filled with persulfate solutions S and S1 having predetermined sulfuric acid concentrations and persulfuric acid concentrations respectively. In the treatment tank, a plastic plate is vertically hung as plastic to be treated. The sulfuric acid concentrations of the persulfate solutions S and S1 are each 50 to 92 wt %. The persulfuric acid concentrations of the solutions S and S1 are each 3 to 20 g/L after the persulfate is dissolved. According to a Cr-free method for treating a plastic surface using such treatment equipment, it becomes possible to form a plating film that sufficiently adheres to the plastic surface.

Abstract: In a step of washing Ge, SiGe or germanide layers in the production of semiconductor devices, resists or metal residues are efficiently removed through washing without dissolving Ge, SiGe or germanides. A sulfuric acid solution with a sulfuric acid concentration of 90 wt % or more and an oxidant concentration of 200 g/L or less is used as a washing liquid. Examples of the washing liquid include an electrolytic solution obtained by electrolysis of the sulfuric acid solution, a solution obtained by mixing hydrogen peroxide with the acid solution or a solution obtained by dissolving an ozone gas in the sulfuric acid solution. A treatment temperature during the washing is preferably 50° C. or less.

Abstract: Provided is a Cr-free plastic surface treatment method which can provide a plating film sufficiently adhered to a plastic surface. The plastic surface treatment method includes treating plastic with a solution obtained by electrolyzing sulfuric acid. It is preferable that the sulfuric acid concentration of the sulfuric acid solution is 50 to 92 wt %, the persulfuric acid concentration is not less than 3 g/L, and the treatment temperature is not lower than 80° C., for example, 80 to 140° C., particularly 100 to 130° C. By immersing plastic in this sulfuric acid solution for 1 minute to 10 minutes, hydrophilic functional groups are exposed on the surface of the plastic.

Abstract: If incorporated in a cleaning system using persulfuric acid, the invention serves for continuous cleaning while increasing the persulfuric acid concentration adequately to ensure enhanced cleaning performance. The invention provides a feeding apparatus that feeds persulfuric acid to a cleaning apparatus. The cleaning system uses an electrolysis reactor 10 that regenerates the persulfuric acid solution by performing electrolytic reaction to produce persulfate ions from sulfate ions contained in the solution, and a circulation line 4, 5, 6 that circulates the persulfuric acid solution between the cleaning vessel 1 and the electrolysis reactor 10. Configured as above, the invention can provides a feeding apparatus. The cleaning system comprises said configuration and a cleaning vessel 1 that cleans objects 30 using a persulfuric acid solution 2 as cleaning fluid.

Abstract: In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

Abstract: In order to selectively further etch silicon nitride by a cleaning liquid in cleaning of a substrate having silicon nitride and silicon oxide on the substrate, a cleaning liquid for use in cleaning of a substrate having silicon nitride and silicon oxide on the same substrate, at least a portion of one or both of the silicon nitride and the silicon oxide being exposed on the substrate, including phosphoric acid, electrolytic sulfuric acid produced by electrolysis and including persulfuric acid suitably having a concentration of 1.0 g/L to 8.0 g/L, and water is suitably brought into contact with the substrate at 165° C. or higher and lower than a boiling point to selectively etch the silicon nitride on the substrate, thereby effectively etching the silicon nitride while etching of silicon oxide is suppressed to favorably clean a semiconductor substrate high in degree of integration having a pattern line width of 37 nm or less.

Abstract: Provided is a method for cleaning a metal gate semiconductor, by which a resist adhering to a semiconductor can be effectively stripped while etching of metal gates is suppressed. The method includes an ashing step (step s1) of ashing a photoresist on a semiconductor; and a persulfuric acid cleaning step (step s2) of bringing, after the ashing step, the semiconductor that has been subjected to the ashing step into contact with a sulfuric acid solution containing persulfuric acid, and thereby stripping the photoresist on the semiconductor from the semiconductor, while the sulfuric acid solution containing persulfuric acid used in the persulfuric acid cleaning step has a hydrogen peroxide concentration of 16 mM as O or less, a sulfuric acid concentration of from 90% by mass to 96% by mass, a liquid temperature of from 70° C. to 130° C., and a persulfuric acid concentration of from 0.50 mM as O to 25 mM as O.

Abstract: A sulfuric acid electrolyte is produced efficiently as a functional solution and persulfuric acid produced by electrolysis is supplied efficiently to a use side while suppressing self-decomposition thereof.

Abstract: The present invention provides a thermosensitive recording medium with excellent color developing sensitivity, moist heat resistance and plasticizer resistance, as well as excellent heat resistance, background coloring, light resistance and the like in the printed image. A diphenyl sulfone derivative containing a hydroxyl group on one end and an alkoxy group on the other end has a higher melting point than the one containing hydroxyl groups on both ends. As a result, the thermosensitive recording medium obtained using the diphenyl sulfone derivative as the color developing agent in the thermosensitive color developing layer has excellent heat resistance. However the color developing sensitivity of the thermosensitive recording medium generally declines simultaneously, when a color developing agent with a high melting point is ordinarily used.

Abstract: The present invention provides a thermosensitive recording medium, which has a satisfactory color developing sensitivity, an excellent general printability (surface strength) and an excellent anti-sticking property. The thermosensitive recording layer of the thermosensitive recording medium of the present invention contains an alkylketene dimer. Without forming a protecting layer, the thermosensitive recording medium of the present invention is superior in color developing sensitivity, general printability (surface strength) and anti-sticking property.

Abstract: A wear of an electrode is prevented as much as possible, thereby efficiently electrolyzing a sulfuric acid solution and the like. An electrolysis method includes: passing an electrolytic solution through an electrolysis cell including at least a pair of an anode and a cathode; and supplying the electrodes with an electric power, so as to electrolyze the electrolytic solution, wherein a viscosity of the electrolytic solution is set in a range in response to a current density upon the electric power supply to carry out the electrolysis. The viscosity of a sulfuric acid solution as the electrolytic solution is equal to or less than 10 cP when the current density is equal to or less than 50 A/dm2, the viscosity of the sulfuric acid solution is equal to or less than 8 cP when the current density is from more than 50 to 75 A/dm2, and the viscosity of the sulfuric acid solution is equal to or less than 6 cP when the current density is from more than 75 to 100 A/dm2.

Abstract: A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.

Abstract: A diamond electrode having an oxidation resistant diamond film which will not separate from the electrode during electrolysis with highly oxidizing materials. The thickness of the diamond film is 20 pm or more and the diamond film should preferably cover opposite side surfaces of a substrate in such a manner as to also cover end surfaces 2a of the substrate. The surfaces of the substrate are covered with a plurality of diamond layers to form the film using repeated steps of forming separate diamond layers with each diamond layer having a thickness of 10 to 30 pm on one of the surfaces of the substrate and then forming a diamond layer having a thickness of 10 to 30 pm on the other surface of the substrate. Thus, it is possible to form a nonporous surface of diamond layer and prevent deterioration of an electrode caused by the separation of a diamond film.