Abstract: An LC aligning substrate (3) is used for an LCD. The substrate is rubbed with a roller (5). The roller has irregularities on the surface thereof, or instead, one of the roller and substrate is vertically vibrated. As a result, the orientation of molecules at the surface of the substrate is finely changed to conceal sharp changes in the orientation of the surface molecules, thereby preventing the LCD from displaying defective rubbing stripes.

Abstract: A thermal recording medium comprising a color former, a developer and a reversible material which can effect a reversible change in at lease a part of a composition system where thermal energies with two different values are supplied or where two different heat histories are provided, and a phase separation controller serves to change phase separation rate between the color former or the developer and the reversible material in the vicinity of its melting point, if necessary.

Abstract: An orientation film evaluating apparatus and a rubbing processing apparatus by which the orientation capability for a liquid crystal orientation film can be measured quantitatively with high sensitivity and accuracy even during an actual production process, and an orientation condition is controlled precisely so as to obtain a stable production condition and to improve productivity and yield therefor. The orientation film evaluating apparatus includes: a unit for radiating infrared light; a polarizing portion which polarizes the infrared at varied angles to an orientation film, and for irradiating the polarized infrared lights to the orientation film; a detection portion which detects infrared light reflected upon the orientation film; and an evaluating portion which obtains a difference of absorbance of infrared light detected by the detection portion with respect to a polarized direction of the orientation film, and which evaluates an orientation capability of the orientation film.

Abstract: A method of forming a resist pattern on a substrate such as a mask substrate for use in manufacturing semiconductor devices or a semiconductor substrate at the intermediate step for manufacturing semiconductor devices includes the steps of baking a resist coated on the substrate at a temperature in its Tg region (glass transition temperature region) or higher temperature, and annealing the resist at a temperature within the Tg region.