Publication number: 20240096967
Abstract: A semiconductor device of an embodiment includes a first gallium nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first gallium nitride region, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
Type:
Application
Filed:
March 2, 2023
Publication date:
March 21, 2024
Applicant:
KABUSHIKI KAISHA TOSHIBA
Inventor:
Tatsuo SHIMIZU
Publication number: 20240097000
Abstract: A semiconductor device of an embodiment includes a first nitride region being nitride selected from aluminum gallium nitride and aluminum nitride, the first nitride region being an n-type semiconductor, and a second gallium nitride region in contact with the first nitride region, the second gallium nitride region being the nitride, the second gallium nitride region being metal, the second gallium nitride region containing a first element being at least one element selected from a group consisting of Be, Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, V, Nb, Ta, Li, Na, K, Rb, Ce, and Zn.
Type:
Application
Filed:
March 9, 2023
Publication date:
March 21, 2024
Applicant:
KABUSHIKI KAISHA TOSHIBA
Inventor:
Tatsuo SHIMIZU