Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined.

Abstract: A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR.sup.1.sub.2).sub.n --, where R.sup.1 substituents are selected from the group consisting of hydrogen, an alkyl group having two or more carbon atoms and a .beta.-hydrogen, a phenyl group and a silyl group, and thermally decomposing the polysilane to deposit silicon.

Abstract: A device for performing identification by sensing the fingerprint of a finger includes an input unit. The input unit is constituted by a plurality of linear contact electrodes formed on a substrate, and a pressure-sensitive sheet formed on the linear contact electrodes and a resistance thereof changes in accordance with a pressure applied thereto. When the finger touches the surface of the pressure-sensitive sheet, a change in resistance is caused between the electrodes, and this change is converted to data of a one-dimensional electrical signal distribution. The obtained data is compared with registered data, thereby performing identification. The time required for signal processing necessary in the identification device can be decreased.

Abstract: A device for performing identification by sensing the fingerprint of a finger includes an input unit. The input unit is constituted by a plurality of linear contact electrodes formed on a substrate, and a pressure-sensitive sheet formed on the linear contact electrodes and a resistance thereof changes in accordance with a pressure applied thereto. When the finger touches the surface of the pressure-sensitive sheet, a change in resistance is caused between the electrodes, and this change is converted to data of a one-dimensional electrical signal distribution. The obtained data is compared with registered data, thereby performing identification. The time required for signal processing necessary in the identification device can be decreased.

Abstract: An apparatus transposes a matrix of semiconductor pellets mounted on a first adhesive tape to a second adhesive tape in such a manner that the respective pellet rows are arranged spaced from the adjacent pellet rows. It has pellet-supporting means having an inclined plane and apical plane. The first adhesive tape bearing the matrix is carried stepwise along the inclined plane toward the apical plane to successively bring the respective rows of the matrix to the apical plane. Above the apical plane, a second adhesive tape is carried in a direction intersecting the pellet columns at right angles with the adhesive plane thereof facing the matrix. When each row mounted on the first tape is on the apical plane, the second tape is pressed against the row. Each time one pellet row is transposed to the second tape, the pellet-supporting means is shifted in a direction intersecting the pellet columns at right angles.

Abstract: A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.

Abstract: A green light emitting device, includes an n-type gallium phosphide (GaP) substrate, an n-type GaP layer and a p-type GaP layer laminated on the n-type GaP substrate. The net donor concentration in the n-type GaP layer decreases abruptly in steps from the GaP substrate side to the p-type GaP layer side. Nitrogen is contained in only the n-type GaP layer portion closest to the p-type GaP layer.

Abstract: A method of manufacturing a gallium phosphide light-emitting device which characteristically comprises the step of growing a gallium phosphide layer of one conductivity type on a gallium phosphide substrate of the opposite conductivity type at a growth initiating temperature of 650.degree. to 850.degree.C by the liquid phase epitaxy process to provide a p-n junction contributing to emission of light.

Abstract: A method of manufacturing a green light-emitting gallium phosphide device which comprises the steps of preparing a liquid-phase epitaxial solution of one conductivity type containing a high concentration of nitrogen at a higher temperature than 1000.degree.C; bringing said epitaxial growth solution now cooled to 600.degree.C to 1000.degree.C into contact with a gallium phosphide substrate of the same conductivity type as said solution; cooling said epitaxial growth solution to form a liquid-phase epitaxial layer on said substrate; and forming a region in close proximity to said liquid-phase epitaxial layer with the opposite conductivity type thereto.