Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×1015 ?/? or higher.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×101 5?/? or higher.

Abstract: A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.

Abstract: An herbicide spreader is capable of changing a spreading width of an herbicide. The herbicide spreader includes: a pair of upper shafts facing with a predetermined interval therebetween in a front and rear direction; a pair of side frames on left and right sides of both the upper shafts; a pair of operation handles connected to both side frames; a spray nozzle mounted to the upper shafts; wheels mounted to both side frames; and a cover sheet for covering portions of a frame main body formed with the pair of upper shafts and both side frames except the bottom. The side frames and the operation handles are rotatably connected to the upper shafts, and opening and closing angle between the left and right side frames is variable and adjusted by operating the pair of operation handles in a direction for bringing them close to or away from each other.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. An average value of a nitrogen concentration of the silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and supporting substrate and higher than a nitrogen concentration at an interface between the silicon oxide layer and piezoelectric material substrate.

Abstract: A bonded body includes a supporting substrate, a piezoelectric material substrate of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and a bonding layer bonding the supporting substrate and piezoelectric material substrate. A material of the bonding layer is silicon oxide. Provided that the bonding layer is divided into a piezoelectric material substrate-side bonding part and a supporting substrate-side bonding part, the piezoelectric material substrate-side bonding part has a nitrogen concentration higher than a nitrogen concentration of the supporting substrate-side bonding part.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×101 5?/? or higher.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate to the supporting substrate.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

Abstract: A metal paste is suppled into a through hole of a ceramic substrate and heated to generate a metal porous body. A glass paste is applied on a main surface of the metal porous body while the glass paste is impregnated into open pores of the metal porous body. The glass paste is hardened by heating to form a glass layer on the main surface of the metal porous body and to make the glass paste impregnated into the open pores form glass phases. The glass layer is removed to obtain a connection substrate having a ceramic substrate and through conductors provided in through holes, respectively. The through conductor includes the metal porous body and glass phases.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate toward the supporting substrate. A ratio (t2/t1) of a width t2 at an end of the void on a side of the supporting substrate with respect to a width t1 at an end of the void on a side of the piezoelectric material substrate is 0.8 or lower.

Abstract: A bonded body includes a supporting substrate; a piezoelectric material substrate composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate; and a bonding layer bonding the supporting substrate and the piezoelectric material substrate and contacting a main surface of the piezoelectric material substrate. The bonding layer includes a void extending from the piezoelectric material substrate to the supporting substrate.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. The surface resistivity of the piezoelectric material substrate on the side of the silicon oxide layer is 1.7×101 5?/? or higher.

Abstract: A bonded body includes a supporting substrate, a piezoelectric material substrate of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate, and a bonding layer bonding the supporting substrate and piezoelectric material substrate. The material of the bonding layer is silicon oxide. Provided that the bonding layer is divided into a piezoelectric material substrate-side bonding part and supporting substrate-side bonding part, the piezoelectric material substrate-side bonding part has a nitrogen concentration higher than a nitrogen concentration of the supporting substrate-side bonding part.

Abstract: A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. An average value of a nitrogen concentration of the silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and supporting substrate and higher than a nitrogen concentration at an interface between the silicon oxide layer and piezoelectric material substrate.

Abstract: A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.

Abstract: A through conductor 11 provided in a through hole of a ceramic substrate includes a metal porous body 20, glass phases 17 and 19 formed in pores 16A to 16D of the metal porous body 20 and spaces 30 and 31 in the pores. A ratio of an area of the pores is 5 to 50 percent in a cross section of the through conductor 11. It is provided that the through conductor 11 is separated into a first part 11A on a side of the first main surface 11a and a second part 11B on a side of the second main surface 11b in a direction B of thickness of the ceramic substrate, a ratio of an area of glass phases occupying the pores in the first part 11A is higher than a ratio of an area of glass phases occupying the pores in the second part 11B. A ratio of an area of spaces occupying the pores in the first part 11A is lower than a ratio of an area of the pores occupying the pores in the second part 11B.

Abstract: A connection substrate includes a ceramic substrate with a through hole therein and a through conductor provided in the through hole and having first main surface and a second main surface. The through conductor includes a metal porous body having first open pores communicating with the first main surface, and second open pores communication with the second main surface, first glass phases provided in the first open pores, respectively, second glass phases formed in the second open pores, respectively, first spaces provided in the first open pores, respectively, and second spaces provided in the second open pores, respectively. The first spaces are closed spaces which do not communicate with the first main surface. The second spaces are open spaces communicating with the second main surface.

Abstract: A handle substrate of a composite substrate for a semiconductor includes a base substrate comprising a polycrystalline material; and an amorphous layer provided over the base substrate, the amorphous layer having chemical resistance and comprising a single component with a high purity.

Abstract: A through conductor 11 provided in a through hole of a ceramic substrate includes a metal porous body 20, glass phases 17 and 19 formed in pores 16A to 16D of the metal porous body 20 and spaces 30 and 31 in the pores. A ratio of an area of the pores is 5 to 50 percent in a cross section of the through conductor 11. It is provided that the through conductor 11 is separated into a first part 11A on a side of the first main surface 11a and a second part 11B on a side of the second main surface 11b in a direction B of thickness of the ceramic substrate, a ratio of an area of glass phases occupying the pores in the first part 11A is higher than a ratio of an area of glass phases occupying the pores in the second part 11B. A ratio of an area of spaces occupying the pores in the first part 11A is lower than a ratio of an area of the pores occupying the pores in the second part 11B.