Abstract: A first molded resin containing first insulating fillers having particle sizes smaller than the opening size of a wire mesh is formed inside the wire mesh to seal a semiconductor chip, bonding wires, and bond pads, and a second molded resin containing second insulating fillers having particle sizes larger than the opening size of the wire mesh is formed outside the wire mesh to seal the semiconductor ship, the bonding wires, and the bond pads via the first molded resin and the wire mesh. This allows for reducing warpage during solder mounting and for improving productivity.

Abstract: A semiconductor package according to the present invention includes a metal plate, a metal base, provided on the metal plate, in which a through hole is formed, a metal block, provided in the through hole, a brazing material covering an upper surface of the metal block, a solder provided on the brazing material, a semiconductor device provided on the solder and a frame provided on the metal base, wherein the frame includes a ceramic part, a difference in thermal expansion coefficient between the metal base and the ceramic part is smaller than a difference in thermal expansion coefficient between the metal block and the ceramic part, the metal block is higher in thermal conductivity than the metal base, and an arithmetic average roughness of an upper surface of the brazing material is not more than a thickness of the solder.

Abstract: A semiconductor package according to the present invention includes a metal plate, a metal base, provided on the metal plate, in which a through hole is formed, a metal block, provided in the through hole, a brazing material covering an upper surface of the metal block, a solder provided on the brazing material, a semiconductor device provided on the solder and a frame provided on the metal base, wherein the frame includes a ceramic part, a difference in thermal expansion coefficient between the metal base and the ceramic part is smaller than a difference in thermal expansion coefficient between the metal block and the ceramic part, the metal block is higher in thermal conductivity than the metal base, and an arithmetic average roughness of an upper surface of the brazing material is not more than a thickness of the solder.

Abstract: A semiconductor device according to the present invention includes a mounting section provided with a chip mounting region for mounting a semiconductor chip, a frame provided in the mounting section so as to surround the chip mounting region, a cap disposed in contact with the frame so as to cover a space surrounded by the chip mounting region and the frame and a joint that joins the frame and the cap outside a contact surface between the frame and the cap.

Abstract: A radiofrequency high-output device includes: a base plate having a mount portion and a flange portion; a frame joined to an upper surface of the mount portion; and a semiconductor chip mounted on the upper surface of the mount portion in the frame, wherein a cut or an aperture in which a screw is inserted to fix the base plate is provided in the flange portion, and a groove is provided between the mount portion and the flange portion of the base plate.

Abstract: A semiconductor device according to the present invention includes a mounting section provided with a chip mounting region for mounting a semiconductor chip, a frame provided in the mounting section so as to surround the chip mounting region, a cap disposed in contact with the frame so as to cover a space surrounded by the chip mounting region and the frame and a joint that joins the frame and the cap outside a contact surface between the frame and the cap.

Abstract: A radiofrequency high-output device includes: a base plate having a mount portion and a flange portion; a frame joined to an upper surface of the mount portion; and a semiconductor chip mounted on the upper surface of the mount portion in the frame, wherein a cut or an aperture in which a screw is inserted to fix the base plate is provided in the flange portion, and a groove is provided between the mount portion and the flange portion of the base plate.

Abstract: A method of manufacturing a semiconductor device includes the steps of placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding the semiconductor element, placing solder on an upper surface of the frame, placing a cap on the solder, and heating the solder while exerting on the cap a force to be applied toward the frame without scrubbing the cap on the frame. In the heating step a heat source is brought into contact with the heat sink and the solder is heated with the heat source.

Abstract: A method of manufacturing a semiconductor device includes the steps of placing, on a heat sink made of a metal, a semiconductor element and a frame surrounding the semiconductor element, placing solder on an upper surface of the frame, placing a cap on the solder, and heating the solder while exerting on the cap a force to be applied toward the frame without scrubbing the cap on the frame. In the heating step a heat source is brought into contact with the heat sink and the solder is heated with the heat source.

Abstract: A semiconductor device has a first semiconductor chip 2a, a wiring substrate 1 connected to the first semiconductor chip 2a, a first surrounding substrate 6a which has an opening at a position avoiding the first semiconductor chip 2a and which is connected onto the wiring substrate 1 by flip-chip bonding, and a second semiconductor chip 2b connected onto the first surrounding substrate 2a by flip-chip bonding. A second surrounding substrate 6b comprising a two or more number of substrate elements is used for the first surrounding substrate 6a.