Abstract: A longitudinal magnetic recording medium having a high medium S/N, with no problems in view of the overwrite characteristic, excellent in the bit error rate and sufficiently stable also to thermal fluctuations is provided. In one embodiment, a first underlayer, second underlayer, and a third underlayer are formed on a substrate and, further, a first magnetic layer, a spacer layer including Ru as a main ingredient, a second magnetic layer, and a third magnetic layer are formed in adjacent with each other in this order. The thickness of the second magnetic layer is made larger than the thickness of the third magnetic layer and the total for the concentrations of cobalt and platinum obtained in the second magnetic layer is not more than the total for the concentrations of cobalt and platinum contained in the third magnetic layer.

Abstract: Embodiments of the present invention provide a magnetic recording medium for use in high-reliable magnetic recording apparatus capable of reading/writing information with high density. In one embodiment, a magnetic recording apparatus includes a magnetic recording medium, a driver for driving the medium in a recording direction, a compound type magnetic head having an electromagnetic induction type magnetic head for recording and a spin-valve type magnetic head for reading in combination, a mechanism to move the head relative to the medium, and a read/write signal processing module for the head. The magnetic recording medium has a magnetic layer formed by way of a first underlayer, a second underlayer and a third underlayer on a substrate.

Abstract: A magnetic recording medium capable of attaining high in-plane recording density of 100 Mbits or more per 1 mm2 is provided. Magnetic recording medium is provided in which underlayers, a first magnetic layer, a first intermediate layer, a second magnetic layer, a second intermediate layer, a third magnetic layer, a protection layer and lubrication layer are formed in this order above a substrate. Each of the third magnetic layer and the second magnetic layer comprises a Co-based alloy containing at least Pt, Cr and B. The concentration of Pt contained in the second magnetic layer is not more than that in the third magnetic layer.

Abstract: A magnetic recording apparatus including a drive unit to drive the magnetic recording medium, a compound-type magnetic head, a means to move the magnetic head relative to the magnetic recording medium, and a means to process recording and retrieving signals generated by the magnetic head. The magnetic recording medium comprises a non-magnetic substrate and a magnetic layer formed thereon with three underlayers interposed inbetween. The magnetic layer is composed of a plurality of layers of Co-based alloy of hexagonal close-packed structure which are antiferromagnetically coupled to one another through a non-magnetic intermediate layer, said three underlayers including an amorphous alloy layer, a Ta layer, and a Cr-based alloy layer of body-centered cubic structure.

Abstract: A large-capacity, low-cost, longitudinal magnetic recording medium capable of ultra-high-density recording of 70 Gigabits or more per square inch is disclosed. The longitudinal magnetic recording medium of the present invention comprises a first seed layer, a second seed layer, a first underlayer, a second underlayer, and a magnetic layer, which are formed on a nonmagnetic substrate in this order. A material containing at least Al and any one of Ru and Re is used to form the second seed layer, and a material containing at least any one of Co and Ni and one or both of Al and Ti is used to form the first underlayer. It is also possible to use Cr or a Cr alloy containing Cr and at least one element selected from the constituent element group A consisting of Ti, Mo, and W for forming the second seed layer.

Abstract: A bit error rate is improved and, at the same time, an aging change due to thermal fluctuation is decreased. In one embodiment, a magnetic recording medium has first, second, third, and fourth magnetic layers stacked over the underlayer film on a substrate. The product (Brt2) of the residual magnetic flux density and film thickness of the second magnetic layer is smaller than the product (Brt3) of the residual magnetic flux density and film thickness of the third magnetic layer. The second magnetic layer has a thickness larger than that of the third magnetic layer and is anti-ferromagnetically coupled with the first magnetic layer by way of the first non-magnetic intermediate layer. The fourth magnetic layer is formed by way of a second non-magnetic intermediate layer above the third magnetic layer.

Abstract: A longitudinal magnetic recording medium having high medium S/N ratio, no problem for overwriting characteristics, excellent bit error rate and also sufficient thermal stability is provided.

Abstract: A magnetic recording material is provided which has high medium S/N, and provides excellent overwriting characteristic, excellent thermal fluctuation and sufficient stability against thermal fluctuation. In one embodiment, a first underlayer comprising one of alloys of a Ti—Co alloy, a Ti—Co—Ni alloy, and an Ni—Ta alloy, a second underlayer comprising a W—Co alloy or Ta, and a third underlayer of a body-centered cubic structure comprising a Cr—Ti—B alloy or a Cr—Ti alloy are disposed over a substrate. A first magnetic layer comprising a Co—Cr—B alloy or a Co—Cr—Ta alloy, a second magnetic layer comprising a Co—Cr—Pt—B—Ta alloy, a third magnetic layer comprising a Co—Cr—Pt—B alloy, and a protective film are disposed further thereover. An intermediate region (Th) is disposed between the second magnetic layer and the third magnetic layer, the intermediate region having a higher oxygen concentration than those of the magnetic layers.

Abstract: In one embodiment, a magnetic recording medium comprises an underlying film, a magnetic film and a protective film formed in this order on a substrate. The magnetic film is a cobalt-base alloy film containing chromium and has a plurality of magnetic layers stacked without interposition of any non-magnetic layer. The plural magnetic layers comprise first, second and third magnetic layers. The first magnetic layer is disposed between the underlying film and the second magnetic layer. The second magnetic layer is disposed between the first magnetic layer and the third magnetic layer. The third magnetic layer is disposed between the second magnetic layer and the protective film. The concentration of chromium contained in the first magnetic layer is lower than that of chromium contained in the second magnetic layer. The thickness of the first magnetic layer is smaller than that of the second magnetic layer. The magnetic layers which overlie the first magnetic layer further contain platinum and boron.

Abstract: A two-type gate process is suitable for forming a gate insulation film partially formed of a high dielectric film, for example, a titanium oxide film (gate insulation film of the internal circuit) having a relative dielectric constant larger than that of silicon nitride on a substrate, and a silicon nitride film is deposited on the titanium oxide film. The silicon nitride film will prevent oxidation of the titanium oxide film when the surface of the substrate is subjected to thermal oxidation in the next process step. Next, the silicon nitride film and the titanium oxide film on the I/O circuit region are removed, while the silicon nitride film and the titanium oxide film on the internal circuit region remain, and the substrate is subjected to thermal oxidation to form a silicon oxide film as a gate insulation film on the surface of the I/O circuit region.

Abstract: A longitudinal magnetic recording medium having a high medium S/N, with no problems in view of the overwrite characteristic, excellent in the bit error rate and sufficiently stable also to thermal fluctuations is provided. In one embodiment, a first underlayer, second underlayer, and a third underlayer are formed on a substrate and, further, a first magnetic layer, a spacer layer including Ru as a main ingredient, a second magnetic layer, and a third magnetic layer are formed in adjacent with each other in this order. The thickness of the second magnetic layer is made larger than the thickness of the third magnetic layer and the total for the concentrations of cobalt and platinum obtained in the second magnetic layer is not more than the total for the concentrations of cobalt and platinum contained in the third magnetic layer.

Abstract: An AFC magnetic recording medium having a three-layered ferromagnetic structure capable of reducing noises without deteriorating thermal stability is provided in order to achieve ultra-high recording density.

Abstract: A magnetic recording medium for attaining high areal recording density and a magnetic recording apparatus are provided. In one embodiment, a magnetic recording medium is provided which includes underlayers, a first magnetic layer, a first intermediate layer, a second magnetic layer, a second intermediate layer, a third magnetic layer, a protective layer and a lubricant layer formed in sequence on a substrate. The first magnetic layer comprises a cobalt-based alloy, and the second magnetic layer and the third magnetic layer each comprises a Co-based alloy containing platinum, chromium and boron. The concentration of chromium contained in the third magnetic layer is less than that in the second magnetic layer, the concentration of chromium contained in the third magnetic layer is about 15 at. % or less, and the first intermediate layer comprises ruthenium or an alloy having ruthenium as a main ingredient.

Abstract: Embodiments of the present invention provide a magnetic recording medium for use in high-reliable magnetic recording apparatus capable of reading/writing information with high density. In one embodiment, a magnetic recording apparatus includes a magnetic recording medium, a driver for driving the medium in a recording direction, a compound type magnetic head having an electromagnetic induction type magnetic head for recording and a spin-valve type magnetic head for reading in combination, a mechanism to move the head relative to the medium, and a read/write signal processing module for the head. The magnetic recording medium has a magnetic layer formed by way of a first underlayer, a second underlayer and a third underlayer on a substrate.

Abstract: A magnetic recording medium capable of attaining high in-plane recording density of 100 Mbits or more per 1 mm2 is provided. Magnetic recording medium is provided in which underlayers, a first magnetic layer, a first intermediate layer, a second magnetic layer, a second intermediate layer, a third magnetic layer, a protection layer and lubrication layer are formed in this order above a substrate. Each of the third magnetic layer and the second magnetic layer comprises a Co-based alloy containing at least Pt, Cr and B. The concentration of Pt contained in the second magnetic layer is not more than that in the third magnetic layer.

Abstract: A large-capacity, low-cost, longitudinal magnetic recording medium capable of ultra-high-density recording of 70 Gigabits or more per square inch is disclosed. The longitudinal magnetic recording medium of the present invention comprises a first seed layer, a second seed layer, a first underlayer, a second underlayer, and a magnetic layer, which are formed on a nonmagnetic substrate in this order. A material containing at least Al and any one of Ru and Re is used to form the second seed layer, and a material containing at least any one of Co and Ni and one or both of Al and Ti is used to form the first underlayer. It is also possible to use Cr or a Cr alloy containing Cr and at least one element selected from the constituent element group A consisting of Ti, Mo, and W for forming the second seed layer.

Abstract: A two-type gate process is suitable for forming a gate insulation film partially formed of a high dielectric film, for example, a titanium oxide film (gate insulation film of the internal circuit) having a relative dielectric constant larger than that of silicon nitride on a substrate, and a silicon nitride film is deposited on the titanium oxide film. The silicon nitride film will prevent oxidation of the titanium oxide film when the surface of the substrate is subjected to thermal oxidation in the next process step. Next, the silicon nitride film and the titanium oxide film on the I/0 circuit region are removed, while the silicon nitride film and the titanium oxide film on the internal circuit region remain, and the substrate is subjected to thermal oxidation to form a silicon oxide film as a gate insulation film on the surface of the I/O circuit region.

Abstract: A magnetic recording apparatus including a drive unit to drive the magnetic recording medium, a compound-type magnetic head, a means to move the magnetic head relative to the magnetic recording medium, and a means to process recording and retrieving signals generated by the magnetic head. The magnetic recording medium comprises a non-magnetic substrate and a magnetic layer formed thereon with three underlayers interposed inbetween. The magnetic layer is composed of a plurality of layers of Co-based alloy of hexagonal close-packed structure which are antiferromagnetically coupled to one another through a non-magnetic intermediate layer, said three underlayers including an amorphous alloy layer, a Ta layer, and a Cr-based alloy layer of body-centered cubic structure.

Abstract: Oxynitridation processing for heat treating a substrate in an atmosphere containing NO (nitrogen monoxide) and ion implantation of nitrogen are used in combination to control the concentration of nitrogen introduced near the boundary between a gate oxide film and a substrate (well), in the order of higher concentration given as: n-channel MISFET having a thick gate oxide film>n-channel MISFET having a thin gate oxide film>p-channel MISFET having the thick gate oxide film, p-channel MISFET having the thin gate oxide film, with no additional use of photomasks, whereby reliability to hot carriers and reliability to NBT can be compatibilized by optimizing the concentration of nitrogen introduced to the boundary between the gate oxide films of four types of MISFET of different conduction type and different gate oxide film thickness and the substrate (well).

Abstract: A two-type gate process is suitable for forming a gate insulation film partially formed of a high dielectric film, for example, a titanium oxide film (gate insulation film of the internal circuit) having a relative dielectric constant larger than that of silicon nitride on a substrate, and a silicon nitride film is deposited on the titanium oxide film. The silicon nitride film will prevent oxidation of the titanium oxide film when the surface of the substrate is subjected to thermal oxidation in the next process step. Next, the silicon nitride film and the titanium oxide film on the I/O circuit region are removed, while the silicon nitride film and the titanium oxide film on the internal circuit region remain, and the substrate is subjected to thermal oxidation to form a silicon oxide film as a gate insulation film on the surface of the I/O circuit region.