Abstract: Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material. A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b).

Abstract: Disclosed is a composite material wherein adhesion between a silicon surface and a plating material is enhanced. A method and an apparatus for producing the composite material are also disclosed.

Abstract: Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material. A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b).

Abstract: Proposed are a composite material, wherein non-penetrating pores that are formed in a silicon surface layer are filled up with a metal or the like without leaving any voids by using the plating technique, and a method of producing the composite material. A composite material, which has been packed at a high accuracy, or in other words, in which little voids are left, can be obtained by filling up non-penetrating pores that are formed from a silicon surface (100) substantially with a second metal or an alloy of the second metal (106) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point.

Abstract: A liquid wiping apparatus that can eliminate the increase in the thickness of membranous liquid and defects in the surface quality resulting from the attachment of splash onto the surface of a metallic strip and can improve the productivity in a manner of accelerating the line speed is provided. The liquid wiping apparatus includes blade wipers for contacting with a molten metal having been attached onto the metallic strip 1 to mechanically wipe the molten metal. In the liquid wiping apparatus, a pressure applying unit 7 of the static pressure pad type using gas is installed at the outlet side of the blade wiper 6 in the strip running direction, and phase-mixed flow of gas/liquid 15 is produced in membranous liquid running between the blade wiper 6 and the strip 1.

Abstract: Proposed are a composite material, wherein non-penetrating pores that are formed in a silicon surface layer are filled up with a metal or the like without leaving any voids by using the plating technique, and a method of producing the composite material. A composite material, which has been packed at a high accuracy, or in other words, in which little voids are left, can be obtained by filling up non-penetrating pores that are formed from a silicon surface (100) substantially with a second metal or an alloy of the second metal (106) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point.

Abstract: Disclosed is a composite material wherein adhesion between a silicon surface and a plating material is enhanced. A method and an apparatus for producing the composite material are also disclosed.

Abstract: Proposed are a composite material having a high adhesiveness, wherein non-penetrating pores that are formed in a silicone surface layer are filled up with a metal or the like without leaving any voids by using the plating technique and the silicone surface layer is coated with the metal or the like, and a method of producing the composite material. A composite material, which has a high adhesiveness between a second metal or an alloy of the second metal (106a, 106b) and a silicone surface, can be obtained by filling up non-penetrating pores that are formed in the surface of a silicone substrate (100) substantially with a second metal or an alloy of the second metal (106a) with the use of the autocatalytic electroless plating technique wherein a first metal located at the bottom of the non-penetrating pores as described above serves as the starting point, and coating the surface of the silicone substrate (100) with the second metal (106b).

Abstract: Provided is a vacuum vapor deposition apparatus in which a crucible as a container for vaporizing a vapor deposition material is placed inside a vacuum chamber and a film is formed on a substrate by use of the vapor deposition material vaporized in the crucible. The apparatus includes measuring means for measuring a bulk of the vapor deposition material in the crucible from an outside of the vacuum chamber.

Abstract: A semiconductor package production method includes the step of die-cutting part of a lead side portion of a seal formed by molding and dam bars using a pedestal and punch. The pedestal has an outer surface at a position retreating from a side surface of an upper seal portion as far as possible and an inner surface generally near a side surface of a lower seal portion. Width Wa of the upper surface of the pedestal is smaller than the overhang size of the upper seal portion. Tip region Ra of the lead side portion which is present right under the overhang portion of the upper seal portion has a slanted surface Fa1 which is sloped inwardly from top to bottom.

Abstract: A semiconductor package production method includes the step of die-cutting part of a lead side portion of a seal formed by molding and dam bars using a pedestal and punch. The pedestal has an outer surface at a position retreating from a side surface of an upper seal portion as far as possible and an inner surface generally near a side surface of a lower seal portion. Width Wa of the upper surface of the upper surface of the pedestal is smaller than the overhang size of the upper seal portion. Tip end region Ra of the lead side portion which is present right under the overhang portion of the upper seal portion has a slanted surface Fa1which is sloped inwardly from top to bottom.

Abstract: A liquid wiping apparatus that can eliminate the increase in the thickness of membranous liquid and defects in the surface quality resulting from the attachment of splash onto the surface of a metallic strip and can improve the productivity in a manner of accelerating the line speed is provided. The liquid wiping apparatus includes blade wipers for contacting with a molten metal having been attached onto the metallic strip 1 to mechanically wipe the molten metal. In the liquid wiping apparatus, a pressure applying unit 7 of the static pressure pad type using gas is installed at the outlet side of the blade wiper 6 in the strip running direction, and phase-mixed flow of gas/liquid 15 is produced in membranous liquid running between the blade wiper 6 and the strip 1.

Abstract: A semiconductor device includes a semiconductor chip, leads for sending and receiving signals between the semiconductor chip and an external device, fine metal wires, an encapsulant for sealing the leads, and a lid member. On the surface of each of the leads, a metal oxide film is formed by an oxidation treatment. The metal oxide film has a thickness larger than a natural oxide film and no more than 80 nm.

Abstract: A method of producing semiconductor packages includes the step of punching out a dam-bar and part of the region lateral to a lead of a scaling body formed by molding, the punching-out being effected by using a support block and a punch. The support block has an outer lateral surface in a region receding as much as possible from the lateral surface of the upper portion of the seal body and also has an inner lateral surface almost flush with the lateral surface of the lower portion of the seal body. The width (Wa) of the upper surface of the support block is smaller than the overhang quantity of the upper portion of the seal body. In the region lateral to the lead, the front end region (Ra) positioned immediately below the overhang section of the upper portion of the seal body has an inclined surface (Fa1) sloping inwardly downward.

Abstract: A semiconductor device includes a semiconductor chip, leads for sending and receiving signals between the semiconductor chip and an external device, fine metal wires, an encapsulant for sealing the leads, and a lid member. On the surface of each of the leads, a metal oxide film is formed by an oxidation treatment. The metal oxide film has a thickness larger than a natural oxide film and no more than 80 nm.

Abstract: The present invention provides a liquid wiping apparatus that can eliminate the increase in the thickness of membranous liquid and defects in the surface quality resulting from the attachment of splash onto the surface of a metallic strip and can improve the productivity in a manner of accelerating the line speed. The liquid wiping apparatus according to this invention includes blade wipers for contacting with a molten metal having been attached onto the metallic strip 1 to mechanically wipe the molten metal. In the liquid wiping apparatus, a pressure applying means 7 of the static pressure pad type using gas is installed at the outlet side of the blade wiper 6 in the strip running direction, and phase-mixed flow of gas/liquid 15 is produced in membranous liquid running between the blade wiper 6 and the strop 1.

Abstract: A storage battery includes a battery casing, a cover closing an opening of said battery casing, and a thinner see-through window portion provided on a sidewall of battery casing for visual recognition, from the outside, of a level of electrolyte contained in battery casing. A rib for reinforcement is provided at see-through window portion.

Abstract: An electronic equipment comprises a device body 1 having a first input unit 3, and a second key input unit 4 slidably attached to the device body 1 and capable of covering and exposing the first input unit 3 by sliding movement. The second key input unit 4 is connected by a FPC to a circuit in a circuit board disposed on the device body 1. Key input can be carried out by both the first input unit 3 and the second key input unit 4. As for the second key input unit 4, it enables key input at any slide position which ranges from the first position for covering the first input unit 3 and the second position for entirely exposing the first input unit 3. The exterior of the second key input unit 4 is constituted by a cabinet 51 and key tops 52a both of which have inclined top surfaces.

Abstract: A storage battery includes a battery casing, a cover closing an opening of said battery casing, and a thinner see-through window portion provided on a sidewall of battery casing for visual recognition, from the outside, of a level of electrolyte contained in battery casing. A rib for reinforcement is provided at see-through window portion.

Abstract: A crane system for carrying a load while suspending it from a portal-shaped body frame via wire ropes includes first and second wire ropes on both sides, in a right-and-left direction, of an upper portion of the body frame for fixing the suspended load, and means for taking up and paying out the first and second wire ropes. The system also includes means for winding the first and second wire ropes in opposite directions, or winding them in the same direction. The first and second wire ropes may be looped together with the means of taking up and paying out the wire ropes. Connection points or sheaves may be provided on the suspended load. It is also permissible to route the first and second wire ropes parallel to each other. Further, the above takeup and payout means may be in a tapered drum form.