Abstract: A mist-generating device includes: a droplet generating unit that generates, in a third liquid, a functional droplet including a first liquid that is spherical and a second liquid that covers an entirety of the first liquid and has a volatility lower than a volatility of the first liquid; and a mist-generating unit that generates a multilayer mist obtained by atomizing the third liquid containing the functional droplet.

Abstract: A mist-generating device includes: a droplet generating unit that generates, in a third liquid, a functional droplet including a first liquid that is spherical and a second liquid that covers an entirety of the first liquid and has a volatility lower than a volatility of the first liquid; and a mist-generating unit that generates a multilayer mist obtained by atomizing the third liquid containing the functional droplet.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A semiconductor device includes a semiconductor substrate that is made of either of silicon carbide (SiC) and gallium nitride (GaN), and has a defect region containing a crystal defect; a first insulating film that coats the defect region and is arranged on the semiconductor substrate; and a conductor film that electrically connects to a principal surface of the semiconductor substrate, the principal surface being exposed to a region that is not coated with the first insulating film.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: To manufacture a photovoltaic device through a first step of sequentially stacking a transparent electrode, a photovoltaic layer, and a rear surface electrode to thereby form a structure in which photovoltaic cells are serially connected, a second step of measuring characteristics of the photovoltaic cell; and a third step of removing, according to a result of measurement, the transparent electrode, the photovoltaic layer, and the rear surface electrode along the serial connection direction, to thereby divide the serially connected photovoltaic cells into a plurality of regions.

Abstract: While using the same laser device, a slit (S4) is formed by cutting an photoelectric conversion unit and a backside electrode formed over a transparent electrode to a surface of the transparent electrode and a slit (S5) is formed by cutting the photoelectric conversion unit and the backside electrode formed in a slit (S2) of the transparent electrode in a direction intersecting a direction of the slit S4.

Abstract: A semiconductor device includes a semiconductor substrate that is made of either of silicon carbide (SiC) and gallium nitride (GaN), and has a defect region containing a crystal defect; a first insulating film that coats the defect region and is arranged on the semiconductor substrate; and a conductor film that electrically connects to a principal surface of the semiconductor substrate, the principal surface being exposed to a region that is not coated with the first insulating film.

Abstract: A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Abstract: A film carrier tape for mounting electronic devices thereon having a mounting unit in which a wiring pattern is formed by etching on a base material, wherein the mounting unit has a target mark to be a reference of an alignment for carrying out final defect marking in a target position on the mounting unit by marking means as a pattern formed on the base material by the etching, and a defect marking method using the same are provided.

Abstract: A film carrier tape for mounting electronic devices thereon having a mounting unit in which a wiring pattern is formed by etching on a base material, wherein the mounting unit has a target mark to be a reference of an alignment for carrying.out final defect marking in a target position on the mounting unit by marking means as a pattern formed on the base material by the etching, and a defect marking method using the same are provided.