Abstract: An image forming apparatus includes a rotatable photosensitive member, a charging member, a developing device, a blade, a detecting portion, and a controller. The controller causes the photosensitive member to rotate through one full circumference or more on the following conditions during a predetermined operation: (i) a voltage which is a discharge start voltage or more is applied to the charging member, and (ii) an operation condition of the developing device is a first condition on which an amount of fog toner deposited from the developer carrying member on the photosensitive member is less than an amount of the fog toner in a second condition which is an operation condition of the developing device during a sheet interval before the image formation during the continuous image formation is interrupted.

Abstract: Siloxane compounds are removed from the atmospheres by silica supporting an organic sulfonic acid compound. The silica with the organic sulfonic acid compound has a specific surface area down to 500 m2/g and up to 750 m2/g and a pore volume down to 0.8 m3/g and up to 1.2 m3/g, both measured by nitrogen gas adsorption method and has a pore diameter down to 4 nm and up to 8 nm, at the peak of differential pore volume measured by nitrogen gas adsorption method. The durability of gas sensing element against siloxanes is improved.

Abstract: The air discharge device includes a duct defining: a main flow path through which an air flow passes; and a main hole opened in a flat shape to discharge the air flow as a working air flow toward a downstream from the main flow path. A throttle portion is provided in the duct to reduce a flow path height of the main flow path from an upstream of the air flow toward a downstream of the air flow. A plurality of partitions are arranged to divide the main flow path in a major direction into a pair of side flow paths and at least one center flow path. The plurality of partitions are disposed in the duct such that a flow path width of the center flow path is reduced from the upstream of the air flow toward the downstream of the air flow.

Abstract: An electricity storage device includes a stack of bipolar electrodes each including a steel sheet, and a plating layer provided on a surface of the steel sheet. The plating layer includes a base nickel-plating layer provided on the surface of the steel sheet, and a surface nickel-plating layer provided on the base nickel-plating layer, and having a surface roughness greater than that of the base nickel-plating layer.

Abstract: A stator includes a magnetic plate material that has a main plate surface that is a surface to face a main plate of a movement when assembled to the main plate and that has a rotor accommodating hole formed in a part thereof; and a non-magnetic region that is made non-magnetic by applying chromium on the main plate surface around the rotor accommodating hole and irradiating the chromium with a laser from the main plate surface side.

Abstract: An optical semiconductor device has: a semiconductor structure; a mesa structure including the semiconductor structure, a p-type semiconductor layer formed on a plane portion, a first side face and a second side face of the mesa structure, and a high-resistance semiconductor layer burying the mesa structure and the p-type semiconductor layer. The first side face is inclined toward a principal surface of the substrate more than the second side face. The p-type semiconductor layer has a carrier concentration in a portion related to the first side face lower than that of a portion related to the plane portion and the second side face. A distance between a lower end of the active layer and a boundary between the first side face and the second face in a vertical direction to the plane portion is not less than 0.1 ?m and not more than 0.5 ?m.

Abstract: A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

Abstract: An optical semiconductor device has: a semiconductor structure; a mesa structure including the semiconductor structure, a p-type semiconductor layer formed on a plane portion, a first side face and a second side face of the mesa structure, and a high-resistance semiconductor layer burying the mesa structure and the p-type semiconductor layer. The first side face is inclined toward a principal surface of the substrate more than the second side face. The p-type semiconductor layer has a carrier concentration in a portion related to the first side face lower than that of a portion related to the plane portion and the second side face. A distance between a lower end of the active layer and a boundary between the first side face and the second face in a vertical direction to the plane portion is not less than 0.1 ?m and not more than 0.5 ?m.

Abstract: A playback device performs playback of a digital stream and executes an application, the digital stream and the application being included in a title recorded on a recording medium, wherein the title has events set therein for executing the application during the digital stream, and; the playback device comprises: a repeat range input unit receiving input of a repeat range pertaining to the digital stream; an event specification unit specifying one of the events that is within the repeat range input to the repeat range input unit and associated with a time closest to an end time of the repeat range; an adjustment unit creating an adjusted repeat range by adjusting the end time of the repeat range to a time preceding the time of the event specified by the event specification unit; and a playback unit performing repeat playback of the digital stream over the adjusted repeat range.

Abstract: A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

Abstract: A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

Abstract: A playback device that secures coexistence of a built-in GUI for a built-in machine created uniquely by the manufacturer and a stereoscopic image created by the contents provider. A subtitle decoder displays a subtitle in a predetermined layout by decoding a subtitle stream. A GUI processing unit draws the built-in GUI. The layout of the subtitle to be displayed is one of: normal layout in which areas for subtitle display are provided both in upper and lower parts of a screen; top arrangement layout in which an area for displaying subtitle is provided only in the upper part of the screen; and bottom arrangement layout in which the area for displaying the subtitle is provided only in the lower part. When the top or bottom arrangement layout is selected as the layout of the subtitle, the GUI processing unit selects the layout of the subtitle as the layout of the built-in GUI.

Abstract: A playback device performs playback of a digital stream and executes an application, the digital stream and the application being included in a title recorded on a recording medium, wherein the title has events set therein for executing the application during the digital stream, and; the playback device comprises: a repeat range input unit receiving input of a repeat range pertaining to the digital stream; an event specification unit specifying one of the events that is within the repeat range input to the repeat range input unit and associated with a time closest to an end time of the repeat range; an adjustment unit creating an adjusted repeat range by adjusting the end time of the repeat range to a time preceding the time of the event specified by the event specification unit; and a playback unit performing repeat playback of the digital stream over the adjusted repeat range.

Abstract: A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×1019 nm/cm3 or less.

Abstract: A reproduction control unit starts to monitor a reproduction state of a title being reproduced by a reproduction unit. If a specific navigation command added to the title being reproduced is executed, the reproduction state at a timing of the execution of this command is stored into a local storage. Moreover, the reproduction control unit determines whether or not the title being reproduced by the reproduction unit is an HDMV movie title, and in the case of the HDMV movie title, the reproduction control unit stores its reproduction state into the local storage. Resume reproduction depending on a reproduction target title is performed based on the reproduction state associated with the execution of the above specific navigation command and register information on the HDMV movie title.

Abstract: To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes (5) and bump electrodes (6) on the lead-out electrodes (5) of a semiconductor chip (2) and surfaces of lead-out electrodes (8) of an intermediate substrate (3), and, after that, the bump electrodes (6) of the semiconductor chip (2) and the lead-out electrodes (8) of the intermediate substrate (3) are aligned with each other. After that, a pressure is applied to bond the bump electrodes (6) and the lead-out electrodes (8).

Abstract: A playback device that secures coexistence of a built-in GUI for a built-in machine created uniquely by the manufacturer and a stereoscopic image created by the contents provider. A subtitle decoder displays a subtitle in a predetermined layout by decoding a subtitle stream. A GUI processing unit draws the built-in GUI. The layout of the subtitle to be displayed is one of: normal layout in which areas for subtitle display are provided both in upper and lower parts of a screen; top arrangement layout in which an area for displaying subtitle is provided only in the upper part of the screen; and bottom arrangement layout in which the area for displaying the subtitle is provided only in the lower part. When the top or bottom arrangement layout is selected as the layout of the subtitle, the GUI processing unit selects the layout of the subtitle as the layout of the built-in GUI.

Abstract: A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a substrate; forming a p-type semiconductor layer on a side face of the mesa structure and a plane area located at both sides of the mesa structure, the p-type semiconductor layer having a thickness of 5 nm to 45 nm on the plane area; and forming a current blocking semiconductor layer on the p-type semiconductor layer so as to bury the mesa structure, a product of the thickness of the p-type semiconductor layer and a concentration of p-type impurity of the p-type semiconductor layer on the plane area being 2.5×1019 nm/cm3 or less.

Abstract: A method of manufacturing an optical semiconductor device including: forming a mesa structure including a first conductivity type cladding layer, an active layer and a second conductivity type cladding layer in this order on a first conductivity type semiconductor substrate, an upper most surface of the mesa structure being constituted of an upper face of the second conductivity type cladding layer; growing a first burying layer burying both sides of the mesa structure at higher position than the active layer; forming an depressed face by etching both edges of the upper face of the second conductivity type cladding layer; and growing a second burying layer of the first conductivity type on the depressed face of the second conductivity type cladding layer and the first burying layer.

Abstract: [Object] To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles. [Means to Realize Object] An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes (5) and bump electrodes (6) on the lead-out electrodes (5) of a semiconductor chip (2) and surfaces of lead-out electrodes (8) of an intermediate substrate (3), and, after that, the bump electrodes (6) of the semiconductor chip (2) and the lead-out electrodes (8) of the intermediate substrate (3) are aligned with each other. After that, a pressure is applied to bond the bump electrodes (6) and the lead-out electrodes (8).