Abstract: One aspect of the present disclosure is a manufacturing method for a support piece used in the formation of a dolmen structure in a semiconductor device, including processes of: (A) preparing a laminate film including a base material film, an adhesive layer, and a support piece formation film, for example, including a thermosetting resin layer, in this order; and (B) forming support pieces on a surface of the adhesive layer by singulating the support piece formation film, in which the process (B) includes a process of forming a cut in the support piece formation film partway in a thickness direction, and a process of singulating the support piece formation film in a cooled state by expansion, in this order.

Abstract: A semiconductor device having a dolmen structure, includes: a substrate; a first chip disposed on the substrate; a plurality of support pieces disposed around the first chip, on the substrate; and a bonding adhesive piece-attached chip supported by the plurality of support pieces and disposed to cover the first chip, in which the bonding adhesive piece-attached chip includes a second chip, and a bonding adhesive piece provided on one surface of the second chip, and a shear strength of the support pieces and the bonding adhesive piece-attached chip at 250° C. is 3.2 MPa or more.

Abstract: One aspect of the present disclosure is a manufacturing method for a support piece used in the formation of a dolmen structure in a semiconductor device, including processes of: (A) preparing a laminate film including a base material film, an adhesive layer, and a support piece formation film, for example, including a thermosetting resin layer, in this order; and (B) forming support pieces on a surface of the adhesive layer by singulating the support piece formation film, in which the process (B) includes a process of forming a cut in the support piece formation film partway in a thickness direction, and a process of singulating the support piece formation film in a cooled state by expansion, in this order.

Abstract: A semiconductor device according to the present disclosure has a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip, in which the support piece contains a cured product of a thermosetting resin composition, or includes a layer containing a cured product of a thermosetting resin composition, and a resin layer or a metal layer.

Abstract: A support piece formation laminate film according to the present disclosure includes a base material film, a pressure-sensitive adhesive layer, and a support piece formation film, in this order, in which the support piece formation film has a multi-layer structure including at least a metal layer. The support piece formation laminate film is applied to a manufacturing process of a semiconductor device having a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip.

Abstract: Provided are a wavelength conversion member including: a quantum dot phosphor; a white pigment including an organic substance layer that contains an organic substance, on at least a part of a surface of the white pigment; and a resin cured product including the quantum dot phosphor and the white pigment.

Abstract: Provided are a wavelength conversion member including: a quantum dot phosphor; a white pigment including an organic substance layer that contains an organic substance, on at least a part of a surface of the white pigment; and a resin cured product including the quantum dot phosphor and the white pigment.

Abstract: The present invention provides a wavelength conversion member including a wavelength conversion layer, the wavelength conversion layer including a quantum dot phosphor, and having a structure derived from a hindered amine-based compound, and a sulfide structure.

Abstract: The present invention provides a wavelength conversion member including a wave length conversion layer, the wavelength conversion layer including a quantum dot phosphor, and an aluminosilicate with an effective pore size of 5.0 ? or more.

Abstract: A wavelength conversion member which contains a cured product of a curable composition that contains a quantum dot phosphor and a carboxylic acid having 1 to 17 carbon atoms.

Abstract: A wavelength conversion member which contains a quantum dot phosphor and is capable of converting incident light into green light and red light, and which is configured such that the half-value width of the green light emission spectrum (FWHM-G) and the half-value width of the red light emission spectrum (FWHM-R) satisfy the following condition A. Condition A: (FWHM-G)/(FWHM-R)?0.

Abstract: A wavelength conversion member which contains a quantum dot phosphor and is capable of converting incident light into green light and red light, and which is configured such that the half-value width of the green light emission spectrum (FWHM-G) is 30 nm or less.

Abstract: Provided is a wavelength conversion member, including: a quantum dot phosphor; and a resin cured product which includes the quantum dot phosphor and which contains an alicyclic structure and a sulfide structure.

Abstract: Provided are a wavelength conversion member including: a quantum dot phosphor; a white pigment including an organic substance layer that contains an organic substance, on at least a part of a surface of the white pigment; and a resin cured product including the quantum dot phosphor and the white pigment.