Abstract: Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the surface of the silicon oxide film and Cu interconnections is treated by a reducing plasma (ammonia plasma). Subsequently, a continuous cap film (silicon nitride film) is formed without vacuum break.

Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

Abstract: Cu interconnections embedded in an interconnection slot of a silicon oxide film are formed by polishing using CMP to improve the insulation breakdown resistance of a copper interconnection formed using the Damascene method, and after a post-CMP cleaning step, the surface of the silicon oxide film and Cu interconnections is treated by a reducing plasma (ammonia plasma). Subsequently, a continuous cap film (silicon nitride film) is formed without vacuum break.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

Abstract: In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

Abstract: In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.

Abstract: A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.

Abstract: In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

Abstract: In a fabrication process of a semiconductor integrated circuit device, upon effecting connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers formed, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

Abstract: A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.

Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

Abstract: After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.

Abstract: In a semiconductor integrated circuit device, upon connection of an interconnection made of aluminum or aluminum alloy and another interconnection made of Cu or Cu alloy, a barrier conductor film or plug is disposed at the joint portion between these interconnections. Among the interconnection layers, the uppermost one is made of a wiring material such as aluminum or aluminum alloy, while the lower, one is made of Cu or Cu alloy. The lowest interconnection is made of a conductive material other than Cu or Cu alloy. For example, the conductive material which permits minute processing and has both low resistance and high EM resistance such as tungsten is employed.

Abstract: A semiconductor device comprises a semiconductor substrate; a first insulating film overlying a surface of the semiconductor substrate, an upper surface of the first insulating film being nitrided; a first copper-embedded interconnection embedded in the first insulating film, and which first copper-embedded interconnection contains copper as a main component; a copper nitride film overlying an upper surface of the first copper-embedded interconnection; a cap insulating film overlying an upper surface of the first insulating film and an upper surface of the copper nitride film; and a second insulting film overlying the cap insulating film.

Abstract: A semiconductor device has a first insulating film deposited over a semiconductor substrate, an interconnect opening portion formed in the first insulating film, an interconnect disposed in the interconnect opening portion, and a second insulating film formed over the first insulating film and the interconnect. The interconnect has a first conductor film, a second conductor film formed via the first conductor film and comprised of one of titanium silicon nitride, tantalum silicon nitride, tantalum nitride and titanium nitride, a third conductor film formed via the first and second conductor films and comprised of a material having good adhesion with copper; and a fourth conductor film formed via the first, second and third conductor conductor film having a copper as a main component. Thus, it is possible to improve adhesion between a conductor film composed mainly of copper and another conductor film having a copper-diffusion barrier function in the interconnect.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.