Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

Abstract: So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

Abstract: To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.

Abstract: A semiconductor device fabrication apparatus having multiple processing chambers for different processes, where a substrate is carried in and out in a sophisticated manner, with their different internal ambient conditions being retained, so that the substrate is free from contamination, thereby manufacturing high-quality semiconductor devices at high throughput. The apparatus includes a movable buffer chamber having a wafer carriage means within a transfer chamber which faces a process chamber, an evacuation means which evacuates of gas the buffer chamber, transfer chamber and process chamber independently, a gas feed means, and a control means.

Abstract: Process equipment and method for processing a semiconductor device comprising a buffer chamber, at least one process chamber connected to the buffer chamber through an opening portion, a holding/carrying unit disposed at a position facing the opening portion for holding and carrying a member to be processed such as a wafer, and a carrier unit disposed in the buffer chamber for transferring the member to be processed to and from the holding/carrying unit. The holding/carrying unit includes a flattened surface closely facing the opening portion for holding an atmosphere in the at least one process chamber independently from an atmosphere in the buffer chamber. The opening portion has a flattened surface closely facing the flattened surface of the holding/carrying unit.