Patents by Inventor Tatuya Miyakawa

Tatuya Miyakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5821137
    Abstract: A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.
    Type: Grant
    Filed: May 15, 1995
    Date of Patent: October 13, 1998
    Assignee: Casio Computer Co., Ltd.
    Inventors: Haruo Wakai, Shinichi Shimomaki, Tatuya Miyakawa
  • Patent number: 5477073
    Abstract: A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.
    Type: Grant
    Filed: August 9, 1994
    Date of Patent: December 19, 1995
    Assignee: Casio Computer Co., Ltd.
    Inventors: Haruo Wakai, Shinichi Shimomaki, Tatuya Miyakawa