Abstract: Microelectronic devices, assemblies, and systems include a microelectronic die and composite material to conduct heat from the microelectronic die such that the composite material includes polymer chains chemically bonded to fill particles having a hexagonal lattice of carbon atoms such as graphene sheet fill particles and/or carbon nanotube fill particles.

Abstract: An integrated circuit (IC) assembly comprising an IC die and a frame material that has been dispensed over the assembly substrate to be further adjacent to a perimeter edge of the IC die. The frame material may be selected to have flow properties that minimize slump, for example so a profile of a transverse cross-section through the frame material may retain convex curvature. The frame material may be cured following dispense, and upon application of a thermal interface material (TIM), the frame material may and act as a barrier, impeding flow of the TIM. The frame material may be compressed by force applied through an external thermal solution, such as a heat sink, to ensure good contact to the TIM.

Abstract: A device is disclosed. The device includes a first die, a plurality of chiplets above the first die, a first underfill material beneath the chiplets, and a gap fill material between the chiplets. The gap fill material is different from the first underfill material. An interface region is formed between the first underfill material and the gap fill material.

Abstract: A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.

Abstract: Microelectronic devices, assemblies, and systems include a microelectronic die and composite material to conduct heat from the microelectronic die such that the composite material includes polymer chains chemically bonded to fill particles having a hexagonal lattice of carbon atoms such as graphene sheet fill particles and/or carbon nanotube fill particles.

Abstract: An integrated circuit (IC) assembly comprising an IC die and a frame material that has been dispensed over the assembly substrate to be further adjacent to a perimeter edge of the IC die. The frame material may be selected to have flow properties that minimize slump, for example so a profile of a transverse cross-section through the frame material may retain convex curvature. The frame material may be cured following dispense, and upon application of a thermal interface material (TIM), the frame material may and act as a barrier, impeding flow of the TIM. The frame material may be compressed by force applied through an external thermal solution, such as a heat sink, to ensure good contact to the TIM.

Abstract: A device is disclosed. The device includes a first die, a plurality of chiplets above the first die, a first underfill material beneath the chiplets, and a gap fill material between the chiplets. The gap fill material is different from the first underfill material.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for a layer for etched identification marks on a package. Embodiments include applying a layer to a side of a package, and laser etching the layer with an identification mark associated with the package to provide a visible identification on the package. In particular, the layer may be an EMI shielding layer of film laminate applied to the side of the package to protect the package from EMI or to protect surrounding components from EMI generated by the package. A laser or some other etching technique may then be performed on the layer to make a visible identification on the package.

Abstract: A structure including a barrier is described. In embodiments, a micro-electronic component may have a first face and a second face, wherein the second face includes interconnect structures and is opposite the first face. A fill material, such as a capillary underfill material (CUF), may fill a gap between the micro-electronic component and the substrate and substantially surround the interconnect structures. In embodiments, a barrier structure may be located on the surface of the substrate and along a perimeter or outside perimeter of the micro-electronic component, wherein a height of the barrier structure exceeds a height of the fill material in at least a portion of an open region of the substrate to confine the fill material to an area bordered by the barrier structure.

Abstract: Embodiments herein relate to a magnetic encapsulant composite, comprising a mixture of a first material that is a soft magnetic filler, a second material that is a polymer matrix, and a third material that is a process ingredient. The magnetic encapsulant composite may then encapsulate or partially encapsulate a magnetic inductor coupled to a substrate to increase the inductance of the magnetic inductor and/or to strengthen the substrate to which the magnetic inductor and the composite are coupled.

Abstract: A semiconductor device that has a semiconductor die coupled to a substrate. A mold compound encapsulates the semiconductor die, and at least one thermal conductive material section extends from adjacent the semiconductor die through the mold compound. The at least one conductive material section thus conveys heat from the semiconductor die through the mold compound.

Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package including a die on a substrate, where the die has a front side surface electrically coupled to the substrate and a backside surface that is opposite from the front side surface. The semiconductor package also has a bicontinuous ceramic composite (BCC) stiffener on the backside surface of the die. The BCC stiffener may include one or more materials, including porous ceramics, polymeric resins, and metals. The BCC stiffener may be directly coupled to the backside surface of the die without an adhesive layer. The BCC stiffener may be disposed on the die to reduce warpage based on the substrate and die. The semiconductor package may have the BCC stiffener formed with the one or more materials using a polymeric resin in a liquid state process and a resin pre-loaded in a ceramic process.

Abstract: Apparatuses, systems and methods associated with procedures and adhesive elements for affixing components together are disclosed herein. In embodiments, an assembly may include a first component and a second component coupled to the first component. The assembly may further include a plurality of adhesive elements located between the first component and the second component, wherein the plurality of adhesive elements couple the second component to the first component, and wherein each adhesive element of the plurality of adhesive elements is equidistance from adjacent adhesive elements of the plurality of adhesive elements. Other embodiments may be described and/or claimed.

Abstract: In various embodiments this disclosure is directed to conductive adhesives layers that can be used, in one example embodiment, to connect one or more shielding structures (for example, metal cans and/or covers) to a semiconductor package to enclose one or more electronic components on the semiconductor package. In another embodiment, the conductive adhesive layers disclosed herein can be used in connection with optoelectronic devices (for example, optoelectronic devices including laser diodes and/or avalanche photodiodes, APDs). In one embodiment, the conductive adhesives can additionally be used for thermal dissipation and for electrical contact in connection with one or more electronic components on a semiconductor package. In one embodiment, various materials including, spray prints, conductive paste, inks (for example, sintering silver-based materials), epoxy material (for example, epoxy materials filled with silver and/or other metal particles) can be used to provide a conductive adhesive layer.

Abstract: Semiconductor packages may include different portions associated one or more electronic components of the semiconductor package where electromagnetic (for example, radio-frequency, RF) shielding at predetermined frequencies ranges may be needed. Accordingly, in an embodiment, compartmental shielding can be used in the areas between the electronic components on the semiconductor package to provide RF shielding to the electronic components on the semiconductor package or to other electronic components in proximity to the electronic components on the semiconductor package. Further, in another embodiment, conformal coating shielding can be used to provide RF shielding to provide RF shielding to the electronic components on the semiconductor package or to other electronic components in proximity to the electronic components on the semiconductor package.

Abstract: In various embodiments this disclosure is directed to conductive adhesives layers that can be used, in one example embodiment, to connect one or more shielding structures (for example, metal cans and/or covers) to a semiconductor package to enclose one or more electronic components on the semiconductor package. In another embodiment, the conductive adhesive layers disclosed herein can be used in connection with optoelectronic devices (for example, optoelectronic devices including laser diodes and/or avalanche photodiodes, APDs). In one embodiment, the conductive adhesives can additionally be used for thermal dissipation and for electrical contact in connection with one or more electronic components on a semiconductor package. In one embodiment, various materials including, spray prints, conductive paste, inks (for example, sintering silver-based materials), epoxy material (for example, epoxy materials filled with silver and/or other metal particles) can be used to provide a conductive adhesive layer.