Abstract: An object is to reduce the leakage current of a piezoelectric element including a potassium-sodium niobate thin film, enhance the reliability of the piezoelectric element and, in addition, enhance the withstand voltage by including a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers, wherein the above-described piezoelectric layer is provided with at least one layer each of first piezoelectric layer which is a potassium-sodium niobate thin film substantially not containing Mn (manganese) and second piezoelectric layer which is a potassium-sodium niobate thin film containing Mn.

Abstract: The magnetic disk unit includes: a magnetic recording medium; a thermally-assisted magnetic recording head including a magnetic pole applying a recording magnetic field to the magnetic recording medium and a heating element heating the magnetic recording medium; and a controller allowing the heating element to perform a continuous heating operation at a first temperature for a first time period, and halting the heating operation of the heating element or allowing the heating element to perform a heating operation at a second temperature lower than the first temperature for a second time period that follows the first time period, the first time period having a length substantially equal to or less than a length of a time required for the magnetic recording medium to rotate one turn, and the second time period having a length substantially equal to or more than the length of the first time period.

Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

Abstract: Method for manufacturing a magnetic head includes providing a stopper layer on an upper surface of a main magnetic pole layer applying a magnetic flux to a recording medium via a first insulation layer, providing a second insulation layer on the upper surface of the first insulation layer to cover at least an entire surface of the stopper layer, covering an upper surface portion of the second insulation layer with a mask layer, forming a height difference portion by removing at least a first insulation layer portion not covered by the mask layer by etching to at least partially remove at least a stopper layer portion in a film thickness direction, and subsequently by removing the mask layer, forming a electrode film in the height difference portion, and forming a plating film, which is a magnetic shield for the main magnetic pole layer, on an upper surface of the electrode.

Abstract: A piezoelectric element includes, as a piezoelectric layer, a thin film of potassium sodium niobate that is a perovskite compound represented by a general expression ABO3, in which Sr (strontium) is substituted on both of an A site and a B site and Mn (manganese) is substituted only on the A site. Accordingly, the piezoelectric element is provided to decrease a leak current of the piezoelectric element using the thin film of potassium sodium niobate, to increase a withstand voltage thereof and to improve piezoelectric characteristics thereof.

Abstract: A measuring circuit system in a magnetic field measuring apparatus of the invention has an amplifier and a band-pass filter connected in sequence on an output terminal side of the TMR element, the band-pass filter is a narrow-range band-pass filter such that a peak pass frequency of the filter that is a center is a basic frequency selected from a range of 10 to 40 GHz and a band width centered around the basic frequency is a narrow range of ±0.5 to ±4 GHz; and with the measuring circuit system, an S/N ratio (SNR) of 3 dB or greater is obtained, the SNR being defined by a ratio of an amplitude S of a high-frequency generated signal induced by the TMR element to a total noise N that is a sum of a head noise generated by the TMR element and a circuit noise generated by the amplifier. With such a configuration, an in-plane high-frequency magnetic field generated by a microwave-assisted magnetic head is reliably and precisely measured.

Abstract: An application head includes a storage-side valve, a discharge-side valve and a plunger. The storage-side valve slides in a space in communication with an intermediate liquid passage between the storage-side valve and the discharge-side valve and changes the volume of liquid in the intermediate liquid passage. Each of the storage-side valve and the discharge-side valve has a column-shaped part, includes a through-hole penetrating between outer circumferential surfaces of the column-shaped part, and is rotatable at least within a predetermined angular range around a center axis of the column-shaped part. Each of the through-holes of the storage-side valve and the discharge-side valve communicates with liquid passages on both sides at a predetermined rotational position and does not communicate with the liquid passage on both sides at other rotational positions outside the angular range.

Abstract: Provided are a soft magnetic alloy powder, a compact made from the soft magnetic alloy powder, a powder magnetic core including the compact, and a magnetic element including the powder magnetic core. The soft magnetic alloy powder contains Fe—Ni-based particles containing 38% to 48% by mass Ni, 1.0% to 15% by mass Co, and 1.2% to 10% by mass Si relative to the total mass of Fe, Ni, Co, and Si, the remainder being Fe. The Fe—Ni-based particles have an average size of more than 1 ?m to less than 10 ?m.

Abstract: A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms<Ha<12.57 Ms. More preferably, the free magnetic layer is composed of an alloy or a stacked film containing at least one element selected from Co, Ni, Fe, and B.

Abstract: Dielectric ceramic composition comprising a compound shown by a general formula {A1?x(RE)2x/3}y-B2O5+y and has a tungsten bronze-type structure. In the formula, “A” is at least one selected from a group comprising Ba, Ca, Sr and Mg, “B” is at least one selected from Nb and Ta, “RE” is at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and said “x” and “y” satisfies 0<x<1 and y>1.000, respectively. The dielectric ceramic composition further comprises an oxide of at least one selected from V, Mo, Fe, W, Mn and Cr.

Abstract: Dielectric ceramic composition comprising a compound shown by a general formula {A1-x(RE)2x/3}y-B2O5+y and has a tungsten bronze-type structure. In the formula, “A” is at least one selected from a group comprising Ba, Ca, Sr and Mg, “B” is at least one selected from Nb and Ta, “RE” is at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and said “x” and “y” satisfies 0<x<1 and y<1.000, respectively. The dielectric ceramic composition further comprises an oxide of at least one selected from V, Mo, Fe, W, Mn and Cr.

Abstract: A wireless headphone system 102 includes a headphone 144 and a headphone stand 104. The headphone 144 has two ear cups 150a and 150b. The ear cup 150a incorporates a receiving coil L3 and a capacitor C3. The ear cup 150b incorporates a charge controller 138 and a secondary battery 112. The headphone stand 104 incorporates a feeding coil L2. When the headphone 144 is set in the headphone stand 104, AC power is supplied from the feeding coil L2 to the receiving coil L3, and the secondary battery 112 of the headphone 144 is charged with the AC power.

Abstract: A dielectric ceramic composition comprising a compound shown by a general formula {A1?x(RE)2x/3}y-D2O5+y having tungsten bronze-type structure and an oxide of “M”. “A” is at least one selected from Ba, Ca, Sr and Mg, “D” is at least one selected from Nb and Ta, “RE” is at least one selected from Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, “x” and “y” satisfies 0<x<1 and y>0, respectively and said “M” is at least one selected from Al, Si, B and Li. It is preferable to further comprise Mg oxide.

Abstract: A switching power supply device includes: a power factor correction circuit having a step-up chopper circuit including a chopper switching element and a power factor correction control unit controlling a switching operation of the chopper switching element; a DC/DC converter having a transformer, a switching circuit, a rectifier circuit, a smoothing circuit, and a DC/DC converter control unit; and a control ON/OFF circuit controlling the ON/OFF states of an output voltage of the DC/DC converter circuit. The switching circuit is provided at a primary winding side of the transformer. The rectifier circuit and the smoothing circuit are provided at a secondary winding side of the transformer. The control ON/OFF circuit controls the ON/OF states of the output voltage of the DC/DC converter circuit by controlling the power factor correction control unit and the DC-DC converter control unit based on an external signal.

Abstract: An electronic component has an element body and an external electrode arranged on the element body. The element body has a pair of end faces opposed to each other, a pair of principal faces opposed to each other, and a pair of side faces opposed to each other. The external electrode is formed so as to cover the end face and a partial region of the principal face and/or a partial region of the side face. The external electrode has a thick film electrode, a thin film electrode, and a plated layer. The thick film electrode is formed on the end face. The thin film electrode is formed so as to cover the thick film electrode and the partial region of the principal face and/or the partial region of the side face. The plated layer is formed outside the thin film electrode and contains Sn or an Sn alloy.

Abstract: This structure body includes a conductor comprising Cu as a main component, an intermediate layer formed on the conductor, and a protective layer formed on the intermediate layer, the intermediate layer includes at least Cu, Sn, Ni, and P, and the protective layer includes at least Ni and P.

Abstract: A directional coupler has a first line capable of transmitting a high-frequency signal therethrough and a second line arranged for electromagnetic coupling with the first line in a laminated board. The first line and the second line are routed on a first conductor layer to extend in close proximity to and in parallel with each other, to form an intra-layer coupling zone for developing electromagnetic coupling between the first line and the second line. The second line is routed on a second conductor layer such that the second line partially overlaps with the first line disposed on the first conductor layer with respect to a length-wise direction, when viewed in plan, to form an inter-layer coupling space for developing electromagnetic coupling between the second line on the second conductor layer and the first line on the first conductor layer.

Abstract: A laminated piezoelectric device comprising a device body 10 on which a number of piezoelectric layers 2 and internal electrodes 3, 4 are laminated, external electrodes 5, 6 electrically connected to the internal electrodes 3, 4 and formed on the surface of the device body 10, an insulation layer 7 and a resistance layer 8. The insulation layer 7 covers at least a portion wherein internal electrodes 3, 4 are exposed on the surface of the device body 10, where mechanical displacement is generated by applying voltage. The resistance layer 8 is formed to connect between external electrodes 5, 6 and has a lower electric resistance value than the insulation layer 7.

Abstract: A lens drive device comprises a lens holder, a piezoelectric actuator, a ball member held rotatably, and an biasing member configured to apply an biasing force to the lens holder toward the piezoelectric actuator through the ball member. The lens holder has a projection projecting outward from an outer peripheral surface and extending in a direction intersecting the projecting direction and optical axis. A side wall face of the projection is formed with a groove extending along the optical axis and engaging the ball member. A position receiving the biasing force from the biasing member and a position receiving the drive force from the actuator in the lens holder oppose each other through the projection interposed therebetween.

Abstract: A piezoelectric compound having no occurrence of segregation or uneven structures as well as a piezoelectric element having excellent piezoelectric properties. The piezoelectric composition includes a main component that is a perovskite-typed oxide represented by formula of ABO3, wherein, one site includes Bi, Na, and another site includes Ti, and part of the Ti is substituted by transition metal element Me (Me is at least one element selected from the group consisting of Mn, Cr, Fe and Co), according to the conversion of BiMeO3, the content ratio of Bi and the transition metal element Me accounts for 6˜43 mol % relative to the whole perovskite-typed oxides as the main component.