Abstract: The invention discloses a buckle ring device for a memory slot. A memory module is able to be inserted into the memory slot. The memory slot is provided at two sides thereof with a seat, respectively. A clamp structure is pivotally connected to an inside of the seat. Two sides of the memory module inserted in the memory slot are clamped by the clamp structures. When the buckle ring device is assembled on the seat of the memory slot, the seat and the clamp structures can be used for constraining the displacement of the buckle ring device in XYZ axis directions, resulting in strengthening the clamping of the clamp structures to the memory module by the buckle ring device.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, a blocking mechanism, an enhancing light source, and a backlight source. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator generates a sensing signal. The signal sensor receives the sensing signal to obtain a sensing strength. The support mechanism is disposed on the substrate. The blocking mechanism is disposed on the substrate and has a light-permeable portion. A portion of the blocking mechanism inserts into or escapes from a gap between the signal generator and the signal sensor. The backlight source is disposed on the substrate and located outside the vertical projection of the blocking mechanism on the substrate. The enhancing light source is disposed on the substrate and located within the vertical projection of the blocking mechanism on the substrate and corresponds to the light-permeable portion.

Abstract: A processing device of a memory sub-system is configured to determine a current refresh frequency associated with the memory device, the current refresh frequency specifying a rate of performing refresh operations on data stored at the memory device; compute an updated refresh frequency by updating the current refresh frequency based on a criterion reflecting a result of comparing one or more operating parameters of the memory device to their respective threshold values; and perform a refresh operation on data stored at the memory device according to the updated refresh frequency.

Abstract: A keyswitch assembly includes a switch module, a support mechanism, and a blocking mechanism. The switch module includes a substrate, a signal generator, and a signal sensor. The signal generator provides a sensing signal. The signal sensor receives the sensing signal to obtain a sensing intensity. The support mechanism is disposed on the substrate. A top portion of the support mechanism moves in response to a pressing force. The blocking mechanism includes a pivoting portion rotatably disposed on the substrate, a connecting piece extending from the pivoting portion and movably connected to the support mechanism to be driven by the top portion to swivel relative to the substrate, and a blocking piece extending from the pivoting portion and driven by the connecting piece to be inserted into or escape from the gap between the signal generator and the signal sensor to change the magnitude of the sensing intensity.

Abstract: A memory system having multiple address tables to translate logical addresses to physical addresses at different granularity levels is disclosed. For example, a first address table is associated with a first block size of translating logical addresses for accessing system files and application files; and a second address table is associated with a second block size of translating logical addresses for storing and/or retrieving data from an image sensor of a surveillance camera. A user interface can be used to access a configuration option to specify the second block size; and a user may indicate a typical size of an image or video file to be recorded by the surveillance camera to calculate the second block size and thus configure the second address table for a partition to record the image or video files.

Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for dynamically updating an optimization read voltage (RV) table. The method includes: obtaining a data-read transaction and replying with the data-read transaction to a host side after listening to a first request for read-performance data, which is issued by the host side, thereby enabling the data-performance transaction to be used in an update of the optimization RV table for a designated memory-cell type; and programming multiple records of an updated optimization RV table for the designated memory-cell type into a designated location of the NAND-flash module after listening to a second request for updating the optimization RV table for the designated memory-cell type, which is issued by the host side. The data-read transaction includes a current environmental parameter of a NAND-flash module, the designated memory-cell type and a bit error rate (BER).

Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for reading data with an optimization read voltage (RV) table. The method includes: determining one set of RVs for a designated memory-cell type according to a current environmental parameter of a NAND-flash module and content of the optimization RV table; and reading data on a page corresponding to the designated memory-cell type from the NAND-flash module with the set of RVs. The optimization RV table includes multiple records and each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a cross-point memory array includes memory cells. A media controller reads one or more first memory cells and determines a read status. The read status indicates an error when reading the first memory cells. In response to this error, the controller refreshes the first memory cells. The controller uses the read status to determine zeroto-one failures associated with the first memory cells. If a number of these failures exceeds a threshold, then a refresh is applied to neighboring memory cells of the first memory cells. The physical addresses for the neighboring memory cells are determined by the controller from the physical addresses for the first memory cells.

Abstract: A backlight module comprises a back plate, a reflective sheet arranged on the back plate and forming a plurality of openings, a plurality of light-emitting elements located in the plurality of openings, at least one optical element arranged on the reflective sheet, and at least a supporting element configured between the back plate and the reflective sheet. The supporting element can move along with the reflective sheet. The supporting element has a base portion and a supporting portion extending from the base portion towards the optical element. The base portion of the supporting element is located between the back plate and the reflective sheet. The supporting portion of the supporting element passes through the reflective sheet to support the optical element. The supporting element is not a fixed design and can move along with the reflective sheet.

Abstract: The present disclosure provides a driving circuit, configured to couple to a light emitting diode (LED) and a power supply circuit. The driving circuit includes a comparator, a serial input interface, and an integrating unit. The comparator is configured to couple to the LED and determine whether a cathode voltage of the LED is lower than a threshold value and generate a monitoring data. The serial input interface is configured to receive a serial input data from a previous driving circuit. The integrating unit is coupled to the comparator and the serial input interface and configured to integrate the monitoring data and the serial input data to generate an output data. The output data is transmitted to a following driving circuit or feedbacked to the power supply circuit in order to modulate a power voltage that the power circuit provides to the LED.

Abstract: A backlight module comprises a back plate, a reflective sheet arranged on the back plate and forming a plurality of openings, a plurality of light-emitting elements located in the plurality of openings, at least one optical element arranged on the reflective sheet, and at least a supporting element configured between the back plate and the reflective sheet. The supporting element can move along with the reflective sheet. The supporting element has a base portion and a supporting portion extending from the base portion towards the optical element. The base portion of the supporting element is located between the back plate and the reflective sheet. The supporting portion of the supporting element passes through the reflective sheet to support the optical element. The supporting element is not a fixed design and can move along with the reflective sheet.

Abstract: A method for removing etchant byproduct from an etch reactor and discharging a substrate from an electrostatic chuck of the etch reactor is provided. One or more layers on a substrate electrostatically secured to an electrostatic chuck within a chamber of the etch reactor is etched using a first plasma, causing an etchant byproduct to be generated. A portion of the one or more layers are covered by a photoresist. After the etching is complete, a second plasma is provided into the chamber for a time period sufficient to trim the photoresist and remove a portion of the etchant byproduct. A second time period sufficient to electrostatically discharge the substrate using the second plasma is determined. Responsive to deactivating one or more chucking electrodes of the electrostatic chuck, the second plasma is provided into the chamber for the second time period and the substrate is removed from the chamber.

Abstract: A memory system having multiple address tables to translate logical addresses to physical addresses at different granularity levels. For example, a first address table is associated with a first block size of translating logical addresses for accessing system files and application files; and a second address table is associated with a second block size of translating logical addresses for storing and/or retrieving data from an image sensor of a surveillance camera. A user interface can be used to access a configuration option to specify the second block size; and a user may indicate a typical size of an image or video file to be recorded by the surveillance camera to calculate the second block size and thus configured the second address table for a partition to record the image or video files.

Abstract: An optical image recognition device and a method for fabricating the same are disclosed. The device includes a flexible printed circuit board, an image sensor, a glue, an optical collimator, a supporting ring, a sealant, and an optical filter. The top of the flexible printed circuit board is provided with a recess, the image sensor is located in the recess, the sidewalls of the image sensor and the recess are separated from each other, and the image sensor is coupled to the flexible printed circuit board through conductive wires. The glue adheres to the flexible printed circuit board and the image sensor and covers the conductive wires. The optical collimator is disposed on the image sensor. The supporting ring, disposed on the flexible printed circuit board, surrounds the glue and the optical collimator. The optical filter, disposed on the sealant, shields the optical collimator and the image sensor.

Abstract: An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix and carbon black. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The carbon black is dispersed in the polymer matrix. A resistance jump Rjump_1000@16V/50A of the over-current protection device at 16V/50 A by 1000 cycles is 0.80-1.20. A resistance jump Rjump_1000@25V/50A of the over-current protection device at 25V/50 A by 1000 cycles is 0.90-1.30.

Abstract: A processing device of a memory sub-system is configured to determine a current refresh frequency associated with the memory device, the current refresh frequency specifying a rate of performing refresh operations on data stored at the memory device; compute an updated refresh frequency by updating the current refresh frequency based on a criterion reflecting a result of comparing one or more operating parameters of the memory device to their respective threshold values; and perform a refresh operation on data stored at the memory device according to the updated refresh frequency.

Abstract: An electrostatic discharge (ESD) circuit is used to protect an internal circuit. The ESD circuit includes: an ESD clamp, having a first terminal connected to a power and a second terminal connected to a ground voltage; and a first switch, connected between an ESD terminal of the ESD clamp and the internal circuit. A gate of the first switch is controlled by a state signal in the ESD clamp to turn off the first switch when an ESD event occurs on the first terminal of the ESD clamp and turn on the first switch when the ESD event does not occur.

Abstract: An over-current protection device comprises first and second electrode layers and a PTC material layer laminated therebetween. The PTC material layer comprises a polymer matrix, a conductive ceramic filler, a carbon-containing conductive filler, and an inner filler. The polymer matrix comprises a fluoropolymer having a melting point higher than 150° C. The inner filler is selected from one of aluminum nitride, silicon carbide, zirconium oxide, boron nitride, graphene, aluminum oxide, or any mixtures thereof, and comprises 2-10% by volume of the PTC material layer. The over-current protection device is able to mitigate negative temperature coefficient (NTC) behavior after trip of device, and achieves high hold current and high endurable power.

Abstract: A frame assembly has a front side, a back side, at least one first assembly and a second assembly. The first assembly has multiple assembling portions disposed at spaced intervals. The second assembly has multiple engaging portions disposed at spaced intervals, and each one of the multiple engaging portions has two engaging surfaces disposed at a spaced interval, a bottom surface connected with the two engaging surfaces, and an opening opposed to the bottom surface and located on an outer edge of the second assembly. A width between the two engaging surfaces near the opening is smaller than a width near the bottom surface. Locations of the multiple engaging portions correspond to locations of the assembling portions, and multiple assembling portions and the multiple engaging portions are capable of being engaged together. A backlight module and a display device are also provided.