Abstract: A method for manufacturing a thin film transistor (“TFT”) device includes providing a substrate, forming a patterned first metal layer on the substrate, forming an insulating layer over the patterned first metal layer, forming an amorphous silicon layer over the insulating layer, forming a first polycrystalline silicon layer over the amorphous silicon layer, forming a second polycrystalline silicon layer over the first polycrystalline silicon layer, doping the second polycrystalline silicon layer to form a doped polycrystalline silicon layer, patterning the amorphous silicon layer, first polycrystalline silicon layer and doped polycrystalline silicon layer to form an active region layer for the TFT device, and forming a patterned second metal layer over the active region layer.

Abstract: A method of fabricating a flexible thin film transistor array substrate is provided. First, a rigid substrate is provided, and a polymer material layer is coated on the rigid substrate. Then, an insulating layer is coated over the polymer material layer by a spin coating process. The insulating layer covers the sides of the polymer material layer. Thereafter, a thin film transistor array is formed over the insulating layer. Then, the polymer material layer having the thin film transistor array is separated from the rigid substrate.

Abstract: A clamping device for a flexible substrate is provided. The clamping device includes a carrier board. The carrier board has a fixed positioning assembly and a plurality of movable positioning assemblies. The fixed positioning assembly and the movable positioning assemblies are disposed in locations that almost correspond to a plurality of through holes on the flexible substrate. The fixed positioning assembly includes a hole body with a positioning hole and a dowel pin. Each movable positioning assembly includes a hole body with a positioning hole, a plurality of curved extending arms and a dowel pin. Each curved extending arm is connected to the hole body and the carrier board and the dowel pin is inserted into the positioning hole.

Abstract: A low temperature poly-silicon thin film element, method of making poly-silicon thin film by direct deposition at low temperature, and the inductively-coupled plasma chemical vapor deposition equipment utilized, wherein the poly-silicon material is induced to crystallize into a poly-silicon thin film at low temperature by means of high density plasma and substrate bias voltage. Furthermore, the atom structure of the poly-silicon thin film is aligned in regular arrangement by making use of the induction layer having optimal orientation and lattice constant close to that of the silicon, thus raising the crystallization quality of the poly-silicon thin film and reducing the thickness of the incubation layer.

Abstract: A method of fabricating a flexible thin film transistor array substrate is provided. First, a rigid substrate is provided, and a polymer material layer is coated on the rigid substrate. Then, an insulating layer is coated over the polymer material layer by a spin coating process. The insulating layer covers the sides of the polymer material layer. Thereafter, a thin film transistor array is formed over the insulating layer. Then, the polymer material layer having the thin film transistor array is separated from the rigid substrate.

Abstract: A method for forming a polycrystalline silicon thin film, comprising steps of: providing a substrate; forming an amorphous silicon thin film on the substrate; and inducing a plurality of eddy currents to heat up the substrate such that the amorphous silicon thin-film is annealed to form the polycrystalline silicon thin film.

Abstract: The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.