Patents by Inventor Te-Fu Tseng
Te-Fu Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8129762Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.Type: GrantFiled: December 31, 2008Date of Patent: March 6, 2012Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fu-Tien Weng, Yu-Kung Hsiao, Hung-Jen Hsu, Yi-Ming Dai, Chin Chen Kuo, Te-Fu Tseng, Chih-Kung Chang, Jack Deng, Chung-Sheng Hsiung, Bii-Junq Chang
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Publication number: 20090104547Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.Type: ApplicationFiled: December 31, 2008Publication date: April 23, 2009Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fu-Tien Weng, Yu-Kung Hsiao, Hung-Jen Hsu, Yi-Ming Dai, Chin Chen Kuo, Te-Fu Tseng, Chih-Kung Chang, Jack Deng, Chung-Sheng Hsiung, Bii-Junq Chang
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Patent number: 7507598Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.Type: GrantFiled: June 20, 2005Date of Patent: March 24, 2009Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fu-Tien Weng, Yu-Kung Hsiao, Hung-Jen Hsu, Yi-Ming Dai, Chin Chen Kuo, Te-Fu Tseng, Chih-Kung Chang, Jack Deng, Chung-Sheng Hsiung, Bii-Junq Chang
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Publication number: 20060019424Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.Type: ApplicationFiled: June 20, 2005Publication date: January 26, 2006Inventors: Fu-Tien Weng, Yu-Kung Hsiao, Hung-Jen Hsu, Yi-Ming Dai, Chin Chen Kuo, Te-Fu Tseng, Chih-Kung Chang, Jack Deng, Chung-Sheng Hsiung, Bii-Junq Chang
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Patent number: 6964916Abstract: A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.Type: GrantFiled: February 17, 2004Date of Patent: November 15, 2005Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin Chen Kuo, Chih-Kung Chang, Hung-Jen Hsu, Fu-Tien Weng, Te-Fu Tseng
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Patent number: 6956253Abstract: A color filter includes a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines. The scribe lines are at least partially filled with a resist material. At least one color resist layer is formed above the substrate within the at least one filter region.Type: GrantFiled: June 6, 2003Date of Patent: October 18, 2005Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fu-Tien Weng, Yu-Kung Hsiao, Hung-Jen Hsu, Yi-Ming Dai, Chin-Chen Kuo, Te-Fu Tseng
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Patent number: 6861207Abstract: A method of fabricating microlens devices. The method includes filling the bond pad areas and scribe lines, or other areas, to improve the topography of the semiconductor wafer surface. A microlens material is applied to the surface after the bond pad areas and scribe lines have been filled. Because of the improved topography, the thickness of the microlens material is more uniform, thereby facilitating the formation of uniformly shaped microlenses.Type: GrantFiled: June 30, 2003Date of Patent: March 1, 2005Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Jen Hsu, Chih-Kung Chang, Fu-Tien Weng, Te-Fu Tseng, Chin-Chen Kuo, Chiung-Yuan Chang
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Patent number: 6849533Abstract: A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.Type: GrantFiled: January 29, 2003Date of Patent: February 1, 2005Assignee: Taiwan Semiconductor Manufacturing Co., LTDInventors: Chih-Kung Chang, Yu-Kung Hsiao, Sheng-Liang Pan, Fu-Tien Wong, Chin-Chen Kuo, Chung-Sheng Hsiung, Hung-Jen Hsu, Yi-Ming Dai, Po-Wen Lin, Te-Fu Tseng
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Publication number: 20050001281Abstract: A packaged image sensing device of improved sensitivity is formed by providing a mechanism for enhancing the focusing of embedded microlenses on the photosensitive elements of the image sensor. Normally, the bonding material interposed between the packaging layers and the microlenses defocuses the microlenses. In one embodiment of the present invention, the focus is restored by interposing an intermediate optically refractive layer between the bonding material and the lenses. In another embodiment, a bonding material with a lower index of refraction is used. In a final embodiment, the microlenses are formed in a material of a higher index of refraction.Type: ApplicationFiled: June 1, 2004Publication date: January 6, 2005Inventors: Hung-Jen Hsu, Chiu-Kung Chang, Fu-Tien Wong, Te-Fu Tseng
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Publication number: 20040265752Abstract: A method of fabricating microlens devices. The method includes filling the bond pad areas and scribe lines, or other areas, to improve the topography of the semiconductor wafer surface. A microlens material is applied to the surface after the bond pad areas and scribe lines have been filled. Because of the improved topography, the thickness of the microlens material is more uniform, thereby facilitating the formation of uniformly shaped microlenses.Type: ApplicationFiled: June 30, 2003Publication date: December 30, 2004Inventors: Hung-Jen Hsu, Chih-Kung Chang, Fu-Tien Weng, Te-Fu Tseng, Chin-Chen Kuo, Chiung-Yuan Chang
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Publication number: 20040248383Abstract: A method for processing a semiconductor substrate comprises the steps of: providing a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines, the scribe lines having a step height; at least partially filling the scribe lines with a resist material to reduce the step height of the scribe lines; and forming at least one color resist layer within the at least one filter region while the insoluble resist material remains in the scribe lines.Type: ApplicationFiled: June 6, 2003Publication date: December 9, 2004Inventors: Fu-Tien Weng, Yu-Kung Hsiao, Hung-Jen Hsu, Yi-Ming Dai, Chin-Chen Kuo, Te-Fu Tseng
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Publication number: 20040248384Abstract: A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.Type: ApplicationFiled: February 17, 2004Publication date: December 9, 2004Inventors: Chin Chen Kuo, Chih-Kung Chang, Hung-Jen Hsu, Fu-Tien Weng, Te-Fu Tseng
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Publication number: 20040147105Abstract: A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.Type: ApplicationFiled: January 29, 2003Publication date: July 29, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Kung Chang, Yu-Kung Hsiao, Sheng-Liang Pan, Fu-Tien Wong, Chin-Chen Kuo, Chung-Sheng Hsiung, Hung-Jen Hsu, Yi-Ming Dai, Po-Wen Lin, Te-Fu Tseng
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Patent number: 6563154Abstract: An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630° C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560° C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.Type: GrantFiled: December 10, 1998Date of Patent: May 13, 2003Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Chun-Chieh Chang, Yu-Jen Yu, Te-Fu Tseng, Chao-Yi Lan
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Patent number: 6242331Abstract: A method for developing a semiconductor device low resistance electrical contact is described. In this process a gate oxide layer followed by a polysilicon layer is deposited on the semiconductor substrate in proximity to the device contact area. It is subsequently patterned with photoresist and etched to produce the desired gate structure. This is followed by a deposited layer of silicon dioxide or silicon nitride (SIN) which is appropriately patterned and etched to form gate isolation spacers. Then a nominal 300 Å layer of silicon nitride (SIN) is deposited followed by a layer of tetraethyl orthosilicate (TEOS) or borophosphosilicate glass (BPSG). The contact area is defined by photolithography, and the passivation layers are etched either by a dry etch such as a RIE process, or a combination of a wet BOE process followed by a dry etch, to form the metal contact holes.Type: GrantFiled: December 20, 1999Date of Patent: June 5, 2001Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Cheng-Yu Chu, Te-Fu Tseng, Chai-Der Chang, Chi-Hung Liao
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Patent number: 5874333Abstract: An improved method for depositing the polysilicon layer from which a gate pedestal is later formed is described. Deposition takes place in two stages. Initially, the conventional deposition temperature of about 630.degree. C. is used. Then, when the intended thickness of polysilicon has been grown, the temperature is ramped down to about 560.degree. C., without interrupting the deposition process, and growth of the film continues to completion. This is followed by a standard doping step using POCl.sub.3. Polysilicon films formed in this way have been found to have very smooth surfaces because the topmost layer is less subject to uncontrolled grain growth. As a consequence, dielectric layers obtained by oxidizing such films exhibit superior breakdown voltages.Type: GrantFiled: March 27, 1998Date of Patent: February 23, 1999Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Chieh Chang, Yu-Jen Yu, Te-Fu Tseng, Chao-Yi Lan