Patents by Inventor Te N. Chin

Te N. Chin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composite resist structures for submicron processing in electron/ion lithography
    Patent number: 4456677
    Abstract: Composite resist structures are described for processing submicron electrc and optical circuits requiring very good pattern resolution between lines because of extremely close spacings between circuit elements. The present invention discloses matrix and layer structures wherein high atomic number (Z) material is used to confine the scattering of the electron beams in the resist. A low Z material is used in combination with a high Z material in the layered configuration to slow down electron velocities without creating a great number of scattered electrons.
    Type: Grant
    Filed: August 10, 1982
    Date of Patent: June 26, 1984
    Assignee: The United Stated of America as represented by the Secretary of the Army
    Inventor: Te N. Chin