Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.

Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.

Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.

Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.

Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.

Abstract: Various embodiments disclosed herein include methods for measuring a parameter associated with a workpiece. Such a method may include providing a first overlay pattern on the workpiece and a second overlay pattern over the first overlay pattern. The first overlay pattern may comprise a first plurality of features spaced apart from each other, and the second overlay pattern may comprise a second plurality of substantially optically transmissive features spaced apart from each other. The second plurality of features may be offset with respect to and partially overlapping the first plurality of features. The method may further comprise directing light onto the first and second overlay pattern such that the light is reflected from both the first and second overlay patterns and using reflectometry to obtain a measure of the parameter from the reflected light.

Abstract: Various embodiments disclosed herein include methods for measuring a parameter associated with a workpiece. Such a method may include providing a first overlay pattern on the workpiece and a second overlay pattern over the first overlay pattern. The first overlay pattern may comprise a first plurality of features spaced apart from each other, and the second overlay pattern may comprise a second plurality of substantially optically transmissive features spaced apart from each other. The second plurality of features may be offset with respect to and partially overlapping the first plurality of features. The method may further comprise directing light onto the first and second overlay pattern such that the light is reflected from both the first and second overlay patterns and using reflectometry to obtain a measure of the parameter from the reflected light.

Abstract: Various embodiments disclosed herein include methods for measuring a parameter associated with a workpiece. Such a method may include providing a first overlay pattern on the workpiece and a second overlay pattern over the first overlay pattern. The first overlay pattern may comprise a first plurality of features spaced apart from each other, and the second overlay pattern may comprise a second plurality of substantially optically transmissive features spaced apart from each other. The second plurality of features may be offset with respect to and partially overlapping the first plurality of features. The method may further comprise directing light onto the first and second overlay pattern such that the light is reflected from both the first and second overlay patterns and using reflectometry to obtain a measure of the parameter from the reflected light.

Abstract: Various embodiments disclosed herein include methods for measuring a parameter associated with a workpiece. Such a method may include providing a first overlay pattern on the workpiece and a second overlay pattern over the first overlay pattern. The first overlay pattern may comprise a first plurality of features spaced apart from each other, and the second overlay pattern may comprise a second plurality of substantially optically transmissive features spaced apart from each other. The second plurality of features may be offset with respect to and partially overlapping the first plurality of features. The method may further comprise directing light onto the first and second overlay pattern such that the light is reflected from both the first and second overlay patterns and using reflectometry to obtain a measure of the parameter from the reflected light.