Patents by Inventor TEL EPION INC.

TEL EPION INC. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD TO ALTER SILICIDE PROPERTIES USING GCIB TREATMENT
    Publication number: 20130224950
    Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.
    Type: Application
    Filed: May 7, 2013
    Publication date: August 29, 2013
    Applicant: TEL EPION INC.
    Inventor: TEL EPION INC.
  • Gas Cluster Ion Beam Etching Process for Etching Si-Containing, Ge-Containing, and Metal-Containing Materials
    Publication number: 20130196509
    Abstract: A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
    Type: Application
    Filed: March 14, 2013
    Publication date: August 1, 2013
    Applicant: TEL Epion Inc.
    Inventor: TEL Epion Inc.
  • SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING
    Publication number: 20130075366
    Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.
    Type: Application
    Filed: November 16, 2012
    Publication date: March 28, 2013
    Applicant: TEL EPION INC.
    Inventor: TEL EPION INC.