Patents by Inventor Teng-Fang Kuo
Teng-Fang Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11769683Abstract: A coated chamber component comprises a body and a protective ceramic coating deposited over a surface of the body, the protective ceramic coating being amorphous and comprising about 8-20% by weight yttrium, about 20-32% by weight aluminum, and about 60-70% by weight oxygen.Type: GrantFiled: April 25, 2022Date of Patent: September 26, 2023Assignee: Applied Materials, Inc.Inventors: Wendell Glenn Boyd, Jr., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Patent number: 11476146Abstract: An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.Type: GrantFiled: April 14, 2020Date of Patent: October 18, 2022Assignee: Applied Materials, Inc.Inventors: Wendell Glenn Boyd, Jr., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Publication number: 20220254672Abstract: A coated chamber component comprises a body and a protective ceramic coating deposited over a surface of the body, the protective ceramic coating being amorphous and comprising about 8-20% by weight yttrium, about 20-32% by weight aluminum, and about 60-70% by weight oxygen.Type: ApplicationFiled: April 25, 2022Publication date: August 11, 2022Inventors: Wendell Glenn Boyd, Jr., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Patent number: 11087979Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.Type: GrantFiled: February 4, 2019Date of Patent: August 10, 2021Assignee: Applied Materials, Inc.Inventors: Christopher S. Olsen, Peter Stone, Teng-fang Kuo, Ping Han Hsieh, Manoj Vellaikal
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Patent number: 10861693Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.Type: GrantFiled: December 12, 2016Date of Patent: December 8, 2020Assignee: Applied Materials, Inc.Inventors: Peter Stone, Christopher S. Olsen, Teng-fang Kuo, Ping Han Hsieh, Zhenwen Ding
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Publication number: 20200243368Abstract: An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.Type: ApplicationFiled: April 14, 2020Publication date: July 30, 2020Inventors: Wendell Glenn Boyd, JR., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Patent number: 10679885Abstract: An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.Type: GrantFiled: June 13, 2018Date of Patent: June 9, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Wendell Glenn Boyd, Jr., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Publication number: 20190172712Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.Type: ApplicationFiled: February 4, 2019Publication date: June 6, 2019Inventors: Christopher S. OLSEN, Peter STONE, Teng-fang KUO, Ping Han HSIEH, Manoj VELLAIKAL
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Patent number: 10199221Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.Type: GrantFiled: December 22, 2017Date of Patent: February 5, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Christopher S. Olsen, Peter Stone, Teng-fang Kuo, Ping Han Hsieh, Manoj Vellaikal
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Publication number: 20180301364Abstract: An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.Type: ApplicationFiled: June 13, 2018Publication date: October 18, 2018Inventors: Wendell Glenn Boyd, JR., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Patent number: 10020218Abstract: A method of manufacturing an electrostatic chuck includes polishing a surface of a ceramic body of the electrostatic chuck to produce a polished surface and depositing a ceramic coating onto the polished surface of the ceramic body to produce a coated ceramic body. The method further includes disposing a mask over the coated ceramic coating, the mask comprising a plurality of elliptical holes and depositing a ceramic material through the plurality of elliptical holes of the mask to form a plurality of elliptical mesas on the coated ceramic body, wherein the plurality of elliptical mesas have rounded edges. The mask is then removed from the coated ceramic body and the plurality of elliptical mesas are polished.Type: GrantFiled: November 17, 2015Date of Patent: July 10, 2018Assignee: Applied Materials, Inc.Inventors: Wendell Glenn Boyd, Jr., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Patent number: 10008388Abstract: The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.Type: GrantFiled: January 24, 2017Date of Patent: June 26, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Ping Han Hsieh, Teng-fang Kuo, Shi Wei Toh, Avgerinos V. Gelatos
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Publication number: 20180138038Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.Type: ApplicationFiled: December 22, 2017Publication date: May 17, 2018Inventors: Christopher S. OLSEN, Peter STONE, Teng-fang KUO, Ping Han HSIEH, Manoj VELLAIKAL
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Patent number: 9870921Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.Type: GrantFiled: September 8, 2016Date of Patent: January 16, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Christopher S. Olsen, Peter Stone, Teng-fang Kuo, Ping Han Hsieh, Manoj Vellaikal
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Patent number: 9805914Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.Type: GrantFiled: April 28, 2015Date of Patent: October 31, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Chun Yan, Jim Zhongyi He, Xinyu Bao, Teng-Fang Kuo, Zhenwen Ding, Adam Lane
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Publication number: 20170301556Abstract: The present disclosure generally relates to methods of removing oxides and oxide-containing layers from the surfaces of substrates. In one aspect, a method of processing a substrate comprises positioning a substrate in a process chamber, the substrate having an oxide layer thereon; introducing one or more process gases to an interior of the process chamber; ionizing the one or more process gases; exposing the oxide layer to the one or more ionized process gases, wherein the process chamber is maintained at a pressure less than about 50 mTorr during the exposing, and the substrate is maintained at a temperature within a range of about zero degrees Celsius to about 30 degrees Celsius during the exposing; and removing the oxide layer from the surface of the substrate.Type: ApplicationFiled: January 24, 2017Publication date: October 19, 2017Inventors: Ping Han HSIEH, Teng-fang KUO, Shi Wei TOH, Avgerinos V. GELATOS
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Publication number: 20170178894Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.Type: ApplicationFiled: December 12, 2016Publication date: June 22, 2017Inventors: Peter STONE, Christopher S. OLSEN, Teng-fang KUO, Ping Han HSIEH, Zhenwen DING
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Publication number: 20170140970Abstract: A method of manufacturing an electrostatic chuck includes polishing a surface of a ceramic body of the electrostatic chuck to produce a polished surface and depositing a ceramic coating onto the polished surface of the ceramic body to produce a coated ceramic body. The method further includes disposing a mask over the coated ceramic coating, the mask comprising a plurality of elliptical holes and depositing a ceramic material through the plurality of elliptical holes of the mask to form a plurality of elliptical mesas on the coated ceramic body, wherein the plurality of elliptical mesas have rounded edges. The mask is then removed from the coated ceramic body and the plurality of elliptical mesas are polished.Type: ApplicationFiled: November 17, 2015Publication date: May 18, 2017Inventors: Wendell Glenn Boyd, JR., Vijay D. Parkhe, Teng-Fang Kuo, Zhenwen Ding
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Publication number: 20170084456Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.Type: ApplicationFiled: September 8, 2016Publication date: March 23, 2017Inventors: Christopher S. OLSEN, Peter STONE, Teng-fang KUO, Ping Han HSIEH, Manoj VELLAIKAL
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Publication number: 20160293384Abstract: Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.Type: ApplicationFiled: April 28, 2015Publication date: October 6, 2016Inventors: Chun YAN, Jim Zhongyi HE, Xinyu BAO, Teng-Fang KUO, Zhenwen DING, Adam LANE