Abstract: The present invention provides a method for manufacturing a photo mask. First, a transparent substrate is provided, and a patterned filling layer and a patterned mask layer are formed on the transparent substrate. Then, a crystal material layer is formed on the transparent substrate and the patterned mask layer to fill the spaces between the patterned filling layer. Thereafter, the patterned mask layer and the crystal material layer on the patterned mask layer are removed to form a patterned photonic crystal layer on the transparent substrate. Finally, the patterned filling layer is removed.

Abstract: An exposure system includes a light source for generating an exposure light, a mask, a lens system, and a bandwidth-filtering module for narrowing bandwidth of the exposure light. The mask, the lens system and the bandwidth-filtering module are sequentially disposed on a light path of the exposure light.

Abstract: A feedback system and method for controlling TE/TM power ratio of light source is proposed. A specially-designed mark is positioned on the mask. The mark and the mask are illuminated by incident light emanated from the light source, and the reflected light or the refracted light of the incident light is detected to provide an output signal. Then, the signal is input into a polarization converter. In this way, the TE/TM polarization power ratio of the light source can be controlled.

Abstract: A mask and the design method thereof are provided. The mask includes a light-shielding area shielding off a light, wherein the light-shielding area includes a photonic crystal having a lattice constant, and a ratio of the lattice constant to a wavelength of the light is a specific value within a band gap of the photonic crystal.

Abstract: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.

Abstract: An optical proximity correction (OPC) method for modifying a photomask layout. The photomask layout includes a first photomask pattern including a first straight line and a second straight line arranged in parallel with the first straight line. The first and second straight lines have a first line-end and a second line-end respectively. The second line-end is closer to a second photomask pattern than the first line-end. The method includes performing a rule-based OPC to generate a corrected photomask layout, and adding an enhancing feature in the first line-end. The width of the enhancing feature is smaller than that of the first line. The second line-end is still closer to the second photomask pattern than the first line-end with the enhancing feature.

Abstract: A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.

Abstract: An optical proximity correction (OPC) method for modifying a photomask layout. The photomask layout includes a first photomask pattern including a first straight line and a second straight line arranged in parallel with the first straight line. The first and second straight lines have a first line-end and a second line-end respectively. The second line-end is closer to a second photomask pattern than the first line-end. The method includes performing a rule-based OPC to generate a corrected photomask layout, and adding an enhancing feature in the first line-end. The width of the enhancing feature is smaller than that of the first line. The second line-end is still closer to the second photomask pattern than the first line-end with the enhancing feature.

Abstract: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.

Abstract: A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.

Abstract: A process for etching a metal layer. First, a semiconducting substrate having a metal layer and an anti-reflective layer thereon is provided. Next, the surface of the anti-reflective layer is treated with a weak base aqueous solution. Next, a photoresist layer is formed on the treated anti-reflective layer and then patterned. Next, the treated anti-reflective layer and metal layer are etched using the photoresist pattern as a mask. Finally, the photoresist pattern and anti-reflective layer are removed. The present invention prevents undercut and collapse of photoresist pattern, thus obtaining an accurate metal layer pattern.