Abstract: An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: An image sensor includes a substrate, at least an optical device, at least a dielectric layer, and at least a wave-guide tube disposed upon the optical device. The wave-guide tube has an optical barrier disposed on a sidewall thereof and a filter layer filled in the wave-guide tube. The structure of the wave-guide tube has the advantages of shortening light path, focusing, and preventing undesirable crosstalk effect between different optical devices.

Abstract: An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: An image sensor includes a substrate, at least an optical device, at least a dielectric layer, and at least a wave-guide tube disposed upon the optical device. The wave-guide tube has an optical barrier disposed on a sidewall thereof and a filter layer filled in the wave-guide tube. The structure of the wave-guide tube has the advantages of shortening light path, focusing, and preventing undesirable crosstalk effect between different optical devices.

Abstract: An image sensor and a method of manufacturing the same, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region to cover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.

Abstract: A method of fabricating an image sensor on a semiconductor substrate having a sensor array region is described. A first planar layer is formed on a semiconductor substrate. Then, a color filter array (CFA) is formed on the first planar layer. A second planar layer is formed on the color filter array. Thereafter, a plurality of U-lenses is formed on the second planar layer. A passivation is formed over the second planar layer and the U-lenses by performing a plasma-enhanced chemical vapor deposition (PECVD) process using TEOS gas. The passivation layer is formed under the conditions that include applying radio frequency power at a rating between 250W˜450W and supplying TEOS gas at a mass flow rate of about 150˜500 mg/m.

Abstract: A method of forming an aluminum-copper alloy film capable of preventing copper precipitation includes: (a) loading a wafer into a PVD tool comprising a vacuum transfer chamber that couples to a cool down chamber, an aluminum-copper sputter deposition process chamber and an anti-reflection coating process chamber; (b) sputter-depositing a first layer of aluminum-copper alloy onto the wafer in the aluminum-copper sputter deposition process chamber to a first thickness; (c) inter-cooling the wafer and the first layer of aluminum-copper alloy in the cool down chamber; (d) sputter-depositing a second layer of aluminum-copper alloy onto the cooled down first layer of aluminum-copper alloy in the aluminum-copper sputter deposition process chamber to a second thickness; and (e) repeating steps (b) to (d) until a third thickness of the aluminum-copper alloy is reached.