Patents by Inventor Ter-Chang Huang

Ter-Chang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a cavity by two-step etching and method of reducing dimension of a MEMS device
    Patent number: 7514287
    Abstract: A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: April 7, 2009
    Assignee: Touch Micro-System Technology Inc.
    Inventors: Ter-Chang Huang, Hung-Yi Lin, Wen-Syang Hsu
  • Method of calibrating zero offset of a pressure sensor
    Patent number: 7392687
    Abstract: A piezoresistive pressure sensor test sample is first provided, and a zero offset of the piezoresistive pressure sensor test sample is measured. Subsequently, a stress deviation corresponding to the zero offset is calculated. Thereafter, at least a piezoresistive pressure sensor under the same process condition as the piezoresistive pressure sensor test sample is formed. When forming the piezoresistive pressure sensor, at least a stress-adjusting thin film is formed on at least a surface of the piezoresistive pressure sensor to calibrate the zero offset of the piezoresistive pressure sensor.
    Type: Grant
    Filed: September 13, 2005
    Date of Patent: July 1, 2008
    Assignee: Touch Micro-System Technology Inc.
    Inventors: Ter-Chang Huang, Hung-Yi Lin, Wen-Syang Hsu
  • METHOD OF FORMING A CAVITY BY TWO-STEP ETCHING AND METHOD OF REDUCING DIMENSION OF A MEMS DEVICE
    Publication number: 20070077727
    Abstract: A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.
    Type: Application
    Filed: March 15, 2006
    Publication date: April 5, 2007
    Inventors: Ter-Chang Huang, Hung-Yi Lin, Wen-Syang Hsu
  • METHOD OF CALIBRATING ZERO OFFSET OF A PRESSURE SENSOR
    Publication number: 20060272383
    Abstract: A piezoresistive pressure sensor test sample is first provided, and a zero offset of the piezoresistive pressure sensor test sample is measured. Subsequently, a stress deviation corresponding to the zero offset is calculated. Thereafter, at least a piezoresistive pressure sensor under the same process condition as the piezoresistive pressure sensor test sample is formed. When forming the piezoresistive pressure sensor, at least a stress-adjusting thin film is formed on at least a surface of the piezoresistive pressure sensor to calibrate the zero offset of the piezoresistive pressure sensor.
    Type: Application
    Filed: September 13, 2005
    Publication date: December 7, 2006
    Inventors: Ter-Chang Huang, Hung-Yi Lin, Wen-Syang Hsu