Patents by Inventor Teresa Baldwin
Teresa Baldwin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9069133Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.Type: GrantFiled: November 12, 2002Date of Patent: June 30, 2015Assignee: Honeywell International Inc.Inventors: Teresa Baldwin, Joseph Kennedy, Nancy Iwamoto, Tadashi Nakano, William Bedwell, Jason Stuck, Arlene Suedemeyer, Mello Hebert
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Patent number: 8889334Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.Type: GrantFiled: December 3, 2012Date of Patent: November 18, 2014Assignee: Honeywell International Inc.Inventors: Joseph T Kennedy, Teresa Baldwin-Hendricks
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Publication number: 20140227538Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds.Type: ApplicationFiled: November 12, 2002Publication date: August 14, 2014Applicant: HONEYWELL INTERNATIONAL INC.Inventors: Teresa Baldwin, Joseph Kennedy, Nancy Iwamoto, Tadashi Nakano, William Bedwell, Jason Stuck, Arlene Suedmeyer, Mello Hebert
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Patent number: 8344088Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.Type: GrantFiled: November 15, 2001Date of Patent: January 1, 2013Assignee: Honeywell International Inc.Inventors: Joseph T. Kennedy, Teresa Baldwin-Hendricks
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Patent number: 7678462Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: July 11, 2005Date of Patent: March 16, 2010Assignee: Honeywell International, Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Publication number: 20090275694Abstract: The present invention provides a siloxane polymer family comprising siloxane polymer made from: (a) a strongly absorbing compound; (b) at least one silane having good leaving groups; and (c) at least one silane having good leaving groups that is different than (b); wherein the siloxane polymer family exhibits a relationship that is concave/convex or is located in the region enclosed by a concave/convex relationship for the ratio of (a) to (b) to (c) and the siloxane polymer's extinction coefficient k value. These siloxane polymers are preferably used as spin-on glass compositions for films in the microelectronics applications.Type: ApplicationFiled: November 16, 2001Publication date: November 5, 2009Applicant: HONEYWELL INTERNATIONAL INC.Inventors: Teresa Baldwin-Hendricks, Joseph T. Kennedy, Mary E. Richey
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Patent number: 7012125Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic dyes incorporated into spin-on-glass materials. Suitable dyes are strongly absorbing over wavelength ranges around wavelengths such as 248 nm and 193 nm that may be used in photolithography. A method of making dyed spin-on-glass materials includes combining one or more organic dyes with alkoxysilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: November 5, 2001Date of Patent: March 14, 2006Assignee: Honeywell International Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Patent number: 6969753Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: November 19, 2002Date of Patent: November 29, 2005Assignee: Honeywell International Inc.Inventors: Teresa Baldwin, Joseph Kennedy, Nigel Hacker, Richard Spear
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Publication number: 20050245717Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: ApplicationFiled: July 11, 2005Publication date: November 3, 2005Inventors: Joseph Kennedy, Teresa Baldwin, Nigel Hacker, Richard Spear
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Patent number: 6956097Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: February 14, 2002Date of Patent: October 18, 2005Assignee: Honeywell International Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Patent number: 6914114Abstract: An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.Type: GrantFiled: April 30, 2003Date of Patent: July 5, 2005Assignee: Honeywell International Inc.Inventors: Teresa Baldwin, Mary Richey, James S. Drage, Hui-Jung Wu, Richard Spear
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Publication number: 20050058929Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. More specifically, the pH tuning agent strong influences the polymeric characteristics, the structural makeup and the spatial orientation that results in increasing the surface properties of the anti-reflective coating for optimal resist performance.Type: ApplicationFiled: November 17, 2004Publication date: March 17, 2005Inventors: Joseph Kennedy, Teresa Baldwin-Hendricks
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Patent number: 6824879Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: November 15, 2001Date of Patent: November 30, 2004Assignee: Honeywell International Inc.Inventors: Teresa Baldwin, Joseph Kennedy, Nigel Hacker, Richard Spear
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Publication number: 20030199659Abstract: An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.Type: ApplicationFiled: April 30, 2003Publication date: October 23, 2003Inventors: Teresa Baldwin, Mary Richey, James S. Drage, Hui-Jung Wu, Richard Spear
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Patent number: 6605362Abstract: An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.Type: GrantFiled: November 5, 2001Date of Patent: August 12, 2003Assignee: Honeywell International Inc.Inventors: Teresa Baldwin, Mary Richey, James S. Drage, Hui-Jung Wu, Richard Spear
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Publication number: 20030120018Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: ApplicationFiled: November 19, 2002Publication date: June 26, 2003Inventors: Teresa Baldwin, Joseph Kennedy, Nigel Hacker, Richard Spear
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Patent number: 6506497Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: GrantFiled: January 26, 2000Date of Patent: January 14, 2003Assignee: Honeywell International Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Publication number: 20020128388Abstract: Anti-reflective coating materials for deep ultraviolet photolithography include one or more organic light-absorbing compounds incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, and 193 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining one or more organic absorbing compounds with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: ApplicationFiled: February 14, 2002Publication date: September 12, 2002Applicant: AlliedSignal Inc.Inventors: Joseph Kennedy, Teresa Baldwin, Nigel P. Hacker, Richard Spear
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Publication number: 20020095018Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one organic light-absorbing compound incorporated into spin-on-glass materials. Suitable absorbing compounds are strongly absorbing over wavelength ranges around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. A method of making absorbing spin-on-glass materials includes combining at least one organic absorbing compound with alkoxysilane or halosilane reactants during synthesis of the spin-on-glass materials.Type: ApplicationFiled: November 15, 2001Publication date: July 18, 2002Inventors: Teresa Baldwin, Joseph Kennedy, Nigel Hacker, Richard Spear
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Publication number: 20020068181Abstract: An absorbing ether-like compound including a siliconethoxy, silicondiethoxy, or silicontriethoxy species attached to a naphthalene or anthracene chromophore via an oxygen linkage is used as an organic light-absorbing compound. The absorbing ether-like compound is incorporated into spin-on glass materials to provide anti-reflective coating materials for deep ultraviolet photolithography. A method of synthesizing the light-absorbing ether compounds is based on the reaction of an alcohol-substituted chromophore with an acetoxysilicon compound in the presence of alcohol. A method of making absorbing spin-on-glass materials including the absorbing ether-like compounds is also provided.Type: ApplicationFiled: November 5, 2001Publication date: June 6, 2002Inventors: Teresa Baldwin, Mary Richey, James S. Drage, Hui-Jung Wu, Richard Spear