Abstract: A method of fabricating a semiconductor device including the steps of forming a first layer of positive photoresist on a substrate surface; exposing selected portions of the photoresist; developing the photoresist to remove those portions which are exposed and leave those portions which are not. Then, plasma etching the substrate and the unexposed resist so that the etch fixes the photoresist. Subsequently forming a second layer of photoresist over the fixed first layer and over the etched substrate. Finally, exposing and developing selected portions of the second layer of photoresist in a pattern which is noncongruent with fixed first photoresist layer. This forms a selective double photoresist layer with the second layer over the fixed first layer, and may also provide single layers of either the first or second photoresist.