Patents by Inventor Terry George Athanas

Terry George Athanas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deep depletion insulated gate field effect transistors
    Patent number: 3958266
    Abstract: A deep depletion insulated gate field effect transistor is made in a silicon layer on a sapphire substrate, so that its threshold voltage is relatively independent of the thickness of the silicon layer. The silicon layer has two parts, namely, a lower part adjacent to the sapphire substrate which is relatively lightly doped, and an upper part, preferably formed by ion implantation, having a doping concentration on the order of about 2 .times. 10.sup.15 atoms/cm.sup.3.
    Type: Grant
    Filed: April 19, 1974
    Date of Patent: May 18, 1976
    Assignee: RCA Corporation
    Inventor: Terry George Athanas