Abstract: A magnetron sputter deposition process for producing a thin film alloy exhibiting shape memory characteristics comprising conducting the sputter deposition using krypton as process gas, depositing the alloy onto heated substrate so secondary annealing is unnecessary, and using a sputter target titanium, nickel and/or palladium in proportions so as to produce a thin film alloy of a composition having a titanium content ranging from at least about 50 atomic percent to less than about 52 atomic percent.

Abstract: A nickel titanium hafnium copper thin film shape memory alloy having a composition (TiHf)5-55(NiCu)45-50 comprising about 2 atomic percent to about 10 atomic percent copper and the fabrication method of said shape memory thin film by magnstron sputtering using Kr as working gas and conducting the deposition at elevated substrate temperature.

Abstract: A process is provided for forming a thin film deposit of a Ni—Ti—Hf ternary shape memory alloy on a substrate by magnetron sputtering deposition having high transformation temperatures and good shape-memory and mechanical properties. The method of forming a thin film deposit of a ternary shape memory alloy on a substrate by sputtering deposition comprises arranging a Ni—Ti—Hf target and a substrate within a deposition chamber, maintaining a working distance from the target to the substrate of about 83 mm to 95 mm; heating the substrate to a temperature high enough to induce in-situ crystallization; introducing a krypton working gas into the deposition chamber; applying appropriate level of deposition power so that the deposition rate is from about 6 Å per second to about 120 Å per second; and, depositing a Ni—Ti—Hf shape memory alloy film having a composition ranging from about Ni48(TiHf)52 to Ni50(TiHf)50.

Abstract: A method of sputtering a palladium or palladium-platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor. Porous high surface area films are deposited that have more consistent properties. A sputtering target is spaced about 3.0-4.5 cm from the thimble and more than 6 cm from the sputtering anode. A pressure of about 10-20 millitorr is used during sputtering at a DC power of about 13-22 watts/cm.sup.2 of target area.

Abstract: A method of sputtering platinum onto a vitrified zirconia thimble to form an exhaust electrode for an electrochemical-type exhaust gas oxygen sensor. The electrode is sputtered under an atmosphere consisting essentially of more than about 50% oxygen and/or nitrogen by volume. Sensors having low symmetrical transition times are produced.

Abstract: A method of sputtering a platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor. Porous high surface area platinum films are deposited that have more consistent properties. A platinum target is spaced about 3.0-4.5 cm from the thimble and more than 6 cm from the sputtering anode. A pressure of about 10-20 millitorr is used during sputtering at a DC power of about 13-22 watts/cm.sup.2 of target area.