Abstract: A nonlinear light absorption material includes a compound having a nonlinear light absorption property at a wavelength of 390 nm or more and 420 nm or less and represented by the formula (1) as a main component: in the formula (1), X is an oxygen atom.

Abstract: A nonlinear light absorption material includes a compound represented by the following formula (1) as a main component: in the formula (1), R1 to R6 are each independently a hydrocarbon group.

Abstract: A nonlinear light absorption material includes a compound represented by the following formula (1) as a main component: in the formula (1), R1 to R10 are each independently a hydrogen atom, a halogen atom, a saturated hydrocarbon group, a halogenated alkyl group, an unsaturated hydrocarbon group, a hydroxyl group, a carboxyl group, an alkoxycarbonyl group, an aldehyde group, an acyl group, an amide group, a nitrile group, an alkoxy group, an acyloxy group, a thiol group, an alkylthio group, a sulfonate group, an acylthio group, an alkylsulfonyl group, a sulfonamide group, a primary amino group, a secondary amino group, a tertiary amino group, or a nitro group.

Abstract: The present disclosure provides solid-state electrolytes based on a borylated-polymers (e.g., borylated-polybutadiene). Further provided are kits comprising, methods of synthesizing, and methods of using the solid-state electrolytes. In some aspects, the solid-state electrolytes demonstrate high ion conductivity at room temperature.

Abstract: Provided are an in-mold degassing structure, which acts by using no external control means, and a mold having that structure. The degassing structure comprises a sliding member (10) for receiving the pushing force of an elastic member from the bottom side, and a sliding member acceptor (20) for accepting the sliding member (10) slidably in the vertical direction. The sliding member (10) includes a vertical bottomed hole (12) communicating with a mold cavity and at least one side opening (13) communicating with the vertical bottom hole and opened to the side face. The sliding member acceptor (20) includes degassing ports (21) communicating in an initial state with the side opening (13) of the sliding member and closed when the sliding member is slid in a direction against the elastic member by the flow tip portion of the molten material.

Abstract: Provided are an in-mold degassing structure, which acts by using no external control means, and a mold having that structure. The degassing structure comprises a sliding member (10) for receiving the pushing force of an elastic member from the bottom side, and a sliding member acceptor (20) for accepting the sliding member (10) slidably in the vertical direction. The sliding member (10) includes a vertical bottomed hole (12) communicating with a mold cavity and at least one side opening (13) communicating with the vertical bottom hole and opened to the side face. The sliding member acceptor (20) includes degassing ports (21) communicating in an initial state with the side opening (13) of the sliding member and closed when the sliding member is slid in a direction against the elastic member by the flow tip portion of the molten material.

Abstract: An output circuit for a semiconductor device that offers improved reliability of data transfer over long distance as well as low consumption. In one embodiment, an output circuit according to the invention includes: an output circuit section having a pair of output terminals for outputting complementary output signals in response to an input signal received by the output circuit section, and a switch circuit connected between the pair of output terminals of the output circuit section. The output circuit section sets the pair of output terminals in a high-impedance state in response to a high-impedance setting signal received by the output circuit section. The switch circuit causes electric coupling between the pair of output terminals in response to the high-impedance setting signal.

Abstract: Disclosed is an output circuit capable of improving the load driving performance of a semiconductor device. The output circuit has first and second N channel MOS transistors connected in series between a high-potential power supply and a low-potential power supply. Both transistors produce an output signal at a node therebetween in response to complementary input signals. The output circuit includes a booster circuit, connected to the first transistor. The booster circuit is supplied with power from the high-potential power supply. In response to a clock signal and an input signal for enabling the first transistor, the booster circuit produces a voltage higher than the potential level of the high-potential power supply and applies the higher voltage to the first transistor.

Abstract: An oscillation circuit is disclosed, which comprises an input stage, intermediate stage and output stage circuits which are coupled to one another. The input stage circuit is composed of a hysteresis inverter having a first threshold value and a second threshold value that is set between the first threshold value and the potential of a first power supply. The intermediate stage circuit includes an inversion circuit and a delay circuit that is provided between the hysteresis inverter and the inversion circuit. The output stage circuit includes an output terminal connected to the hysteresis inverter, a capacitor provided between the output terminal and the first power supply and an inverter circuit connected to the inversion circuit. The inverter circuit controls the charging and discharging of the capacitor to generate an oscillation output signal at the output terminal.