Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

Abstract: A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: Each of a plurality of cells includes at least one avalanche photodiode. A light projecting unit is arranged to project light having a cross-sectional shape whose longitudinal direction corresponds to a first direction. The light projecting unit is arranged to scan the light along a second direction intersecting the first direction such that the reflected light is incident on, among N cell groups each of which includes M cells aligned in a row direction, each cell group or each plurality of cell groups. A controller is arranged to apply, in accordance with the incidence of the reflected light, a bias voltage that makes the avalanche photodiode operate in a Geiger mode to each cell group or each plurality of cell groups, and is arranged to read signals from cells included in the cell group or the plurality of cell groups to which the bias voltage has been applied.

Abstract: A semiconductor substrate has a first main surface and a second main surface that oppose each other and a plurality of cells that are arrayed two-dimensionally in a matrix. Each cell includes at least one avalanche photodiode arranged to operate in a Geiger mode. A trench penetrating through the semiconductor substrate is formed in the semiconductor substrate to surround each cell when viewed in a direction orthogonal to the first main surface. A light-shielding member optically separates mutually adjacent cells of the plurality of cells. The light-shielding member includes a first portion extending in a thickness direction of the semiconductor substrate between an opening end of the trench at the first main surface and an opening end of the trench at the second main surface and a second portion projecting out from the second main surface. The insulating film includes a portion that covers the second portion.

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract: A back-illuminated semiconductor light detecting device includes a light detecting substrate having pixels, and a circuit substrate having signal processing units. For each of the pixels, the light detecting substrate includes avalanche photodiodes respectively having light receiving regions provided in a first main surface side of the semiconductor substrate. In the semiconductor substrate, for each pixel, a trench surrounds at least one region including the light receiving region when viewed from a direction perpendicular to the first main surface. The number of signal processing units is larger than the number of light receiving regions in each pixel, and the number of regions surrounded by the trench in each pixel is equal to or less than the number of light receiving regions in the pixel.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

Abstract: An optical detection unit includes a first wiring substrate that has a first main surface, a plurality of optical detection chips that each have a light receiving surface and a rear surface on a side opposite to the light receiving surface and are two-dimensionally arranged on the first main surface, a first bump electrode that electrically connects the optical detection chip to the first wiring substrate, a light transmitting portion that is provided on the light receiving surface, and a light shielding portion that has light reflection properties or light absorption properties. The optical detection chip includes a Geiger-mode APD and is mounted on the first wiring substrate by the first bump electrode in a state in which the rear surface faces the first main surface.

Abstract: A photodetecting device includes a semiconductor substrate including a first principal surface and a second principal surface that oppose each other and a plurality of through-electrodes penetrating through the semiconductor substrate in a thickness direction. The semiconductor substrate includes a plurality of avalanche photodiodes arranged to operate in Geiger mode. The plurality of through-electrodes are electrically connected to the corresponding avalanche photodiodes. The semiconductor substrate includes a first area in which the plurality of avalanche photodiodes are distributed in at least a first direction and a second area in which the plurality of through-electrodes are distributed two-dimensionally. The first area and the second area are distributed in a second direction orthogonal to a first direction when viewed from a direction orthogonal to the first principal surface.

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each including a light receiving region disposed at a first principal surface side of the semiconductor substrate, the avalanche photodiodes being arranged two-dimensionally at the semiconductor substrate, and a through-electrode electrically connected to a corresponding light receiving region. The through-electrode is provided in a through-hole penetrating through the semiconductor substrate in an area where the plurality of avalanche photodiodes are arranged two-dimensionally. At the first principal surface side of the semiconductor substrate, a groove surrounding the through-hole is formed between the through-hole and the light receiving region adjacent to the through-hole.