Abstract: The inside of a vacuum pump is heated by means of a first heating unit to a temperature higher than the temperature at which products of reaction discharged from a process chamber are separated, and the inner surface of an exhaust pipe is heated to a temperature higher than the separation temperature by means of a second heating unit. If a vacuum process is carried out in the process chamber in this state, exhaust gas discharged from the process chamber can pass in a gaseous phase through the exhaust pipe and the vacuum pump without separating its unwanted by-products. Since a trap unit is located on the downstream side of the vacuum pump, moreover, the reaction products and the like can be prevented from adhering to the inside of the vacuum pump so that the maintenance operation is easier, although the conductance of the exhaust pipe is lowered so that the trap unit and the vacuum pump can be reduced in size.

Abstract: A film forming apparatus includes a chamber in which a thin film is formed on a semiconductor wafer by supplying a process gas, the interior of which is then cleaned by a cleaning gas, while the gas in the chamber is exhausted by a vacuum system.

Abstract: The inside of a vacuum pump is heated by means of a first heating unit to a temperature higher than the temperature at which products of reaction discharged from a process chamber are separated, and the inner surface of an exhaust pipe is heated to a temperature higher than the separation temperature by means of a second heating unit. If a vacuum process is carried out in the process chamber in this state, exhaust gas discharged from the process chamber can pass in a gaseous phase through the exhaust pipe and the vacuum pump without separating its unwanted by-products.

Abstract: A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.

Abstract: A treatment apparatus comprises a heater including an insulator carrying a to-be-treated object thereon and a resistance heating element therein for heating the to-be-treated object, an electrical supply mechanism including feeders extending into a treatment chamber from outside and terminals connecting the feeders and the resistance heating element, and a metallic pipe surrounding the terminals and those portions of the feeders which extend in the treatment chamber. A treatment apparatus for discharging an exhaust gas from the treatment chamber through an exhaust pipe by means of a suction unit comprises a first heater in the inner wall of the treatment chamber for heating the gas in the treatment chamber, and a second heater for independently heating the exhaust gas in the exhaust pipe at various portions of the exhaust pipe.

Abstract: A fire detecting/extinguishing apparatus according to the present invention is comprised of a fire detecting unit which monitors to detect a fire within a monitoring area, the fire detecting unit stepwise scanning in a vertical direction while scanning the fire monitoring area in the vertical direction at each step of the horizontal scanning; a water discharging unit having a water discharging nozzle for discharging water to the monitoring area, the water discharging unit being rotatable in the horizontal direction, the water discharging unit being directed toward a position of the fire based on the fire detection by the fire detecting unit; a swinging unit which swings the water discharging unit in the horizontal direction; and a casing in which the fire detecting unit and the water discharging unit are housed as a single unit. Further, the apparatus of the present invention includes a cover fixed to a side of the water discharging nozzle which is opposite to the side of the water discharging nozzle.

Abstract: A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.

Abstract: A vacuum processing apparatus comprises a vacuum processing chamber for subjecting an object to be processed to a predetermined vacuum processing, an auxiliary vacuum chamber whose internal pressure is variable repeatedly between an atmospheric pressure and a process pressure, when the object is put in and taken out of the vacuum processing chamber, and exhaust system for exhausting a gas from the auxiliary vacuum chamber. The exhaust system has at least one exhaust port located apart from an internal wall surface of the auxiliary vacuum chamber.

Abstract: A vacuum creating method comprising preparing a chamber for forming a space which can be made so atmospheric and vacuous as to allow a substrate to be directly or indirectly carried in and out of the space, exhausting the chamber, filling the space in the chamber with a CO.sub.2 gas whose vapor pressure becomes larger than 1 atm at ambient temperature but smaller than 10 Torr at a temperature lower than the ambient temperature, carrying the substrate into the chamber, cooling the CO.sub.2 gas to solidify, thereby making an internal pressure in the chamber highly vacuous, carrying the substrate out of the chamber, and heating the solidified dry ice to vaporize thereby returning the internal pressure in the chamber to atmospheric pressure.

Abstract: A double-nozzle deluge gun has a pair of nozzles arranged side by side rotatably on a rotatable table and an inter-nozzle control unit for adjusting the inter-nozzle angle measured between two lines obtained by projecting the radiation center lines of the nozzles onto a horizontal plane. Each nozzle has a deflector which is positioned in front of the nozzle during the very short range mode. Each deflector has a side cover which prevents water having passed through the deflector from excessively spreading sideways. The inter-nozzle angle and the water pressure are adjusted in accordance with desired water-reaching ranges, so as to achieve an optimal watering pattern in any range. Thus, the double-nozzle deluge gun can be controlled in accordance with desired water-reaching ranges, so as to achieve an optimal watering pattern having an appropriate width in any range.

Abstract: A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

Abstract: A reduced pressure processing system includes a load lock chamber having an opening communicating with a process atmosphere in which a wafer is processed and/or the outer air atmosphere, a gate valve which is arranged at the opening to close/open the chamber with respect to the process atmosphere and/or the outer air atmosphere, a robot for loading/unloading the wafer into/from the chamber, an evacuation pump for evacuating the chamber, a heater for heating the wall of the chamber, and a controller for controlling the gate valve, the robot, the evacuation pump, and the heater.

Abstract: According to this invention, a surface-treating apparatus capable of etching an object to be treated with high accuracy, suppressing discharging of a harmful gas deposited on the etched object in the air, and preventing the surface of the object from deposition/ attachment of reaction products and droplets is disclosed. The surface-treating apparatus includes a first process chamber for etching a loaded object to be treated by an activated etching gas, an exhausting member for setting the first process chamber at a low pressure, a cooling means for cooling the object loaded in the first process chamber, a second process chamber in which the object etched by the first process chamber is loaded, an exhausting member for setting the second process chamber at a low pressure, and an heating member for annealing the object loaded in the second process chamber.

Abstract: A probe apparatus has a quartz probe formed of a quartz probe body and a metallic pattern layer formed thereon, the quartz probe body including a plurality of probe portions having a large number of probes corresponding to an electrode array of an object of examination, lead pattern portions continuous individually with the probe portions, and a supporting portion supporting all the lead pattern portions, the quartz probe body being designed so that the longitudinal direction of each probe is inclined with respect to a crystal axis X or Y of a quartz plate by etching a Z plane of the quartz plate perpendicular to a crystal axis Z of the quartz plate, and a tester fitted with the quartz probe by means of an adapter.

Abstract: A sealing device of this invention is designed to prevent entering of the open air through a coupling of a process tube of a CVD apparatus. The sealing device includes a first flange having a mirror-finished face, a second flange having a face which is brought into contact with the face of the first flange, at least one gas guide which is open to at least one of the faces of the first and second flanges and an evacuation system for evacuating a region, in which the first and second flanges are brought into contact with each other, through the gas guide.