Abstract: A microwave heating apparatus (101) includes a burning chamber (103) in which an object (102) to be burned is placed, a magnetron (116) for applying microwaves into the heating apparatus, a cooling gas introducing mechanism (112b) for introducing a cooling gas from outside the heating apparatus into the heating apparatus, a cooling gas channel (113b) through which the cooling gas flows to the burning chamber (103), heat-generating members (114a to 114e) for self-heating with microwaves applied thereto to heat the cooling gas flowing through the cooling gas channel (113b) and a control section (117) for, when the burning chamber (103) having the object (102) to be burned placed therein is cooled, causing the cooling gas introducing mechanism (112b) to introduce the cooling gas into the heating apparatus, and causing the magnetron (116) to intermittently apply microwaves into the heating apparatus.

Abstract: Temperature control in wafer-level burn-in is performed such that a set temperature used for the temperature control is corrected using a correction value calculated from the generated heat density of a wafer (101). Thus it is possible to eliminate a difference between the temperature of the wafer heated when an electrical load is applied and a control temperature for applying a thermal load, not depending on the distribution of good devices formed on the wafer (101) and the power consumption of the devices. As a result, the wear and burn of a probe can be prevented and highly reliable screening can be achieved.

Abstract: A temperature regulation plate 106 is divided into at least two areas, a heater 408 for applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensors 409 arranged in respective areas for controlling the heater 408 and switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and apparatus can be provided.

Abstract: An electrolyte fuel system, its operation and program and a recording medium associated with the program is disclosed. Embodiments include a fuel cell system having a load electric current changing means for changing an amount of load electric current that runs in one ore more fuel cells which are operated to generate electricity, a measurement means for measuring voltage responses to the change in said load electric current, a calculating means for calculating impedance of said one or more fuel cells based on said voltage responses measured, and a fuel cell control means for controlling condition for operation of said one or more fuel cells by utilizing calculation results retrieved by said calculating means.