Abstract: A magnetic thin film of the present invention comprises: a substrate; and a ferromagnetic film being formed on the substrate and having an average diameter of 0.1 to 10 &mgr;m, a thickness of 0.005 to 1.5 &mgr;m and a ratio of the thickness to the average diameter of not more than 0.5:1, wherein the ferromagnetic film having at a center portion thereof a perpendicular magnetization component, which is oriented or magnetized in the up or down direction perpendicular to the surface of the magnetic thin film.

Abstract: In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate major surface. The corrugations of the interface are formed by providing the substrate surface with a multiplicity of asperities distributed in both X and Y directions and depositing magnetic layers and nonmagnetic layers thereon. The film shows a linear rise of MR change in an applied magnetic field within a very low range of 0 to about 40 Oe.

Abstract: In a magnetoresistance multilayer film comprising at least two magnetic layers on a substrate, with a nonmagnetic layer intervening between the magnetic layers, each interface between the magnetic layer and the nonmagnetic layer is corrugated in both X and Y directions of a substrate major surface. The corrugations of the interface are formed by providing the substrate surface with a multiplicity of asperities distributed in both X and Y directions and depositing magnetic layers and nonmagnetic layers thereon. The film shows a linear rise of MR change in an applied magnetic field within a very low range of 0 to about 40 Oe.

Abstract: A magnetoresistance effect element having a substrate, a buffer layer of a metal selected from the group consisting of chromium, tungsten, titanium, vanadium, manganese and their alloys which is formed on the substrate, and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on the metal thin layer, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces. This magnetoresistance effect element has an increased magnetoresistance ratio.

Abstract: There is provided a magnetoresistance effect element comprising a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces, characterized in that a metal thin film is provided in an interface between at least one of the magnetic layers and the non-magnetic layer which is adjacent thereto, and the metal thin film is made of a substance which is different from that of the adjacent non-magnetic layer.

Abstract: A magnetoresistance effect element is provided which comprises a substrate on which a first magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt, a second magnetic layer having a thickness of not larger than 5 nm which contains iron or nickel or an alloy thereof, a third magnetic layer having a thickness of 0.2 to 5 nm which contains cobalt and a nonmagnetic layer having a thickness of 0.5 to 5 nm are laminated in this order at least twice, wherein the thickness of the second magnetic layer is not larger than half of the total thickness of the first and third magnetic layers. The element is useful as a magnetoresistance sensor or head.

Abstract: A magnetoresistance effect element including a substrate and at least two magnetic thin layers which are laminated with interposing a non-magnetic thin layer therebetween on said substrate, wherein adjacent magnetic thin layers through the non-magnetic thin layer have different coercive forces and each of the magnetic thin layers and the non-magnetic layer has a thickness of not larger than 200 .ANG., which has a large magnetoresistance ratio of several % to several ten % at a small external magnetic field of several Oe to several ten Oe and can provide a MR sensor having a high sensitivity and a MR head which achieves high density magnetic recording.

Abstract: There is provided a magnetoresistance effect element which is a multilayer structure body wherein a first magnetic film layer made of Ni-rich Ni-Co-Fe having a thickness of 10 to 100 .ANG. and a second magnetic film layer made of Co-rich Co-Ni-Fe having a thickness of 10 to 100 .ANG., which are different from each other in coercive force, are integrally laminated with a non-magnetic metal film layer having a thickness of 10 to 100 .ANG. interposed therebetween. The non-magnetic metal film layer is of a metal, for example, Cu, Ag, Au, Pt, Ru or Re. (Ni.sub.A Co.sub.1-A).sub.B Fe.sub.1-B, Ni.sub.A Fe.sub.1-A or Ni.sub.A Co.sub.1-A is used as a material of the first magnetic film, and (Co.sub.C Ni.sub.1-C).sub.D Fe.sub.1-D is used as a material of the second magnetic film.

Abstract: An Fe-Co base magnetic material comprising periodically laminated structure which consists of an Fe layer which has the bcc (110) plane in the lamination plane, an Fe-Co alloy layer which has the bcc (110) plane in the lamination plane and is laminated on said Fe layer and a Co layer which has the hcp (101) plane in the lamination plane and is laminated on said Fe-Co alloy layer, which laminated structure has controlled magnetostriction.

Abstract: In ferromagnetic powders mainly composed of iron oxide, the ferromagnetic iron oxide(s) comprise a superparamagnetic material which provides a peak showing superparamagnetism by measurement of the Mossbauer Effect spectrum. The ferromagnetic iron oxides are suitable for making highly sensitive magnetic recording media having excellent frequency response with lowered modulation noise.