Patents by Inventor Tetsuhiko Sanbei

Tetsuhiko Sanbei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040266093
    Abstract: An optical bench on which an optical component is mounted comprises an Si substrate made of a silicon wafer, a groove disposed on the Si substrate and designed to mount the optical component thereon, and a metal thin-film wiring for driving the optical component or a driver component. The metal thin-film wiring is formed in an electroless plating process before a groove manufacturing process which forms the groove by micromachining by means of wet processing.
    Type: Application
    Filed: June 9, 2004
    Publication date: December 30, 2004
    Inventors: Ryuzou Fukao, Tetsuhiko Sanbei
  • Patent number: 5522966
    Abstract: A process for forming trenches on a surface of a semiconductor substrate by dry etching using a gas mixture. The gas mixture comprises; (1) an etchant gas comprising at least bromine which etches the semiconductor surface to form trenches, (2) a cleaning gas comprising a halogen which evaporates residue formed by the etching, and (3) a reactive gas, e.g. N.sub.2, capable of reacting with material formed during the etching and capable of controlling the inclination of the trenches.
    Type: Grant
    Filed: November 17, 1993
    Date of Patent: June 4, 1996
    Assignee: Nippondenso Co., Ltd.
    Inventors: Atsushi Komura, Yoshikazu Sakano, Kenji Kondo, Keiichi Kon, Tetsuhiko Sanbei, Shoji Miura
  • Patent number: 5423941
    Abstract: A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.
    Type: Grant
    Filed: November 17, 1993
    Date of Patent: June 13, 1995
    Assignee: Nippondenso Co., Ltd.
    Inventors: Atsushi Komura, Yoshikazu Sakano, Kenji Kondo, Keiichi Kon, Tetsuhiko Sanbei, Shoji Miura