Abstract: A health support device having a lamination of a semiconductor film on a surface of a partially-reduced sintered material of titanium oxide. The semiconductor film is preferably a p-type semiconductor film of silicon or germanium. The partially-reduced sintered material is preferably represented by TiO2−x, where 0<×<0.5. The thickness of the semiconductor film is preferably from 1 nm to 500 nm. In production, a mixture of a titanium oxide powder and a binder is press-molded, and the molded material is sintered at a temperature of from 500° C. to 1100° C. in a vacuum, inert or reducing atmosphere. A p-type semiconductor film is formed on a surface of the resulting partially-reduced sintered material of titanium oxide.

Abstract: A health support device having a lamination of a semiconductor film on a surface of a partially-reduced sintered material of titanium oxide. The semiconductor film is preferably a p-type semiconductor film of silicon or germanium. The partially-reduced sintered material is preferably represented by TiO2−x, where 0<x<0.5. The thickness of the semiconductor film is preferably from 1 nm to 500 nm. In production, a mixture of a titanium oxide powder and a binder is press-molded, and the molded material is sintered at a temperature of from 500° C. to 1100° C. in a vacuum, inert or reducing atmosphere. A p-type semiconductor film is formed on a surface of the resulting partially-reduced sintered material of titanium oxide.

Abstract: A composite medical treating device includes laminations of an n-type semiconductor film and a p-type semiconductor film coated on a surface of a ferrodielectric substance. When the composite medical treating device is affixed to a part of skin having a stiff portion and a pain, potentials of -, +, -, +, -, + are induced on a surface of the ferrodielectric substance in response to changes of potentials of +, -, +, -, + of the epidermis. Since the laminations of the n-type semiconductor film and the p-type semiconductor film are coated on the surface of the ferrodielectric substance, minus electricity is allowed to flow to the epidermis passing through the n-p laminations. However, plus electricity does not pass through the n-p (semiconductor) laminations and does not flow to the epidermis. Thus, the epidermis potential returns from plus to minus potential and is stabilized.